DIODE 35A Search Results

ARR01C120

Contextual Info: Industrial Microphotonics Company 120W CW Laser Diode Array Part Number: ARR01C120 DERRINGER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS

SMD MARKING CODE s4

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAP1321-04 Silicon PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification Silicon PIN diode BAP1321-04 FEATURES PINNING • High voltage, current controlled PIN DESCRIPTION

Contextual Info: 7MBR35SB120 IGBT Modules IGBT MODULE S series 1200V / 35A / PIM Features • Low VCE(sat) · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply

PFW3500

Abstract: PFW3501 PFW3502 PFW3504 PFW3506 PFW3508 PFW3510 ic shipping tray jedec tray
Contextual Info: PFW3500 – PFW3510 W TE PO WE R SEM IC O ND U C TO RS 35A 1/2" FLAG LEAD PRESS-FIT DIODE Features ! Diffused Junction ! ! ! ! Low Leakage Low Cost High Surge Current Capability Typical IR less than 10µA J D Mechanical Data ! ! ! ! ! H Case: All Copper Case and Components

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

FCA03C060

Contextual Info: Industrial Microphotonics Company 60W CW Fiber Bundle Coupled Laser Diode Array Part Number: FCA03C060 FIBER BUNDLE COUPLED ARRAY • Available wavelengths 785-1000nm OPTICAL CHARACTERISTICS PRELIMINARY ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS 32A at 25˚ C Heat Sink

C2E1

Abstract: QCA75A QCA75A40 QCA75A60 QCB75A40 QCB75A60 diode a60 ib25ab
Contextual Info: TRANSISTOR MODULE QCA75A/QCB75A40/60 UL;E76102 （M） QCA75A and QCB75A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. 94max

100n60

Abstract: IXXR100N60B3H1
Contextual Info: Advance Technical Information IXXR100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 68A 1.80V 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings

CB1AH-P-24V

Abstract: zener diode 4.2V 24v Power Distribution Board RELAY 20A 12V Relays 24v 70a cb1ahtp12v
Contextual Info: Products with diode inside are discontinued in 2014. Automotive relay with ISO terminal arrangement CB CB RELAYS FEATURES Products to be discontinued. 1. This relay has an ISO International Organization for Standardization terminal arrangement. Terminals are all solder plated.

Contextual Info: HGT1S7N60B3DS Data Sheet 14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode The HGT1S7N60B3DS is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input

ATP113

Contextual Info: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.)

Contextual Info: ? PD-2.461 International g« ]Rectifier HFA70NC60CSL Ultrafast, Soft Recovery Diode HEXFRED BASE COMMI3N CATHODE Features VR = 600V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V f = 1.5V Qrr * = 520nC

Contextual Info: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247

7MBR50UA120

Abstract: 7MBR50UA120 IGBT
Contextual Info: 7MBR50UA120 IGBT Modules IGBT MODULE U series 1200V / 50A / PIM Features • Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier

APT35GT120JU2

Contextual Info: APT35GT120JU2 ISOTOP Boost chopper Trench + Field Stop IGBT® G E K E C G ISOTOP Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF

AN-994

Abstract: IRLBD59N04E SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
Contextual Info: PD -93910 IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A† Description

V23234-A1001-X036

Abstract: V23234-A0004-X053 V2323 V23234-A1001-X033 V23234-A1004-X050 V23234-B1001-X004 V23234-C1001-X005 V23234-A0001-X038 5 pin relay 12vdc with NO NC V23234-A0001-X040
Contextual Info: Automotive Relays Plug-in Mini ISO Relays Power Relay B n Pin assignment similar to ISO 7588 part 1 Plug-in terminals n Customized versions on request – 24VDC versions with contact gap >0.8mm – Integrated components e.g. resistor, diode – Customized marking/color

Contextual Info: M ITEL ITZ35C12 Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

smd 39a diode zener

Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

V23074-A1002-A403

Abstract: V23074-A2002-A403 v23074-a1001 v23074-a1001-a402 V23074-A1002-A402 v23074-A1001-A403 V23074-A2001-A403 relay 12vdc with diode v23074 V23074-A2002-A402
Contextual Info: Automotive Relays Plug-in Micro ISO Relays Micro Relay A/VFMA n High current version with limiting continuous current 30A at 85°C assignment according to ISO 7588 part 3 n Customized versions on request – 24VDC versions with special contact gap – Integrated components e.g. diode

35N120D1

Abstract: D-68623 IXER 35N120D1
Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50 A = 1200 V VCES VCE sat typ. = 2.2 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside* E G = Gate C = Collector E = Emitter *Patent pending Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C

35n120au1

Abstract: IXSX35N120AU1 IGBT 500V 35A 35N120AU
Contextual Info: High Voltage IGBT with Diode IXSX 35N120AU1 VCES = 1200 V IC25 = 70 A VCE SAT = 4V Combi Pack Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

plessey sp

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4740-2.1 ITS40C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS40C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage