DIODE 330 Search Results
DIODE 330 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
CUZ30V |
![]() |
Zener Diode, 30 V, USC |
![]() |
||
CUZ24V |
![]() |
Zener Diode, 24 V, USC |
![]() |
||
CUZ36V |
![]() |
Zener Diode, 36 V, USC |
![]() |
||
CUZ20V |
![]() |
Zener Diode, 20 V, USC |
![]() |
||
CEZ6V8 |
![]() |
Zener Diode, 6.8 V, ESC |
![]() |
DIODE 330 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Vishay Intertechnology, Inc. DIODE AND THYRISTOR MODULES ADD-A-PAK TO-240AA MODULES Up to 105 A, 1600 V, New Generation 7, Diode-Diode and Diode-SCR Configurations Available INT-A-PAK (34 MM) MODULES Up to 165 A, 1600 V, Diode-Diode and Diode-SCR Configurations |
Original |
O-240AA) OT-227 VMN-MS6956-1408 | |
TSP70Contextual Info: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > MOSFETs Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series |
Original |
TSP2305A TSP40GD120P TSP25G135T O-247 TSP25GD135T TSP25G135P TSP25GD135P TSP70 | |
DIODE A46
Abstract: A47 diode skkh570 4092 thyristor skkt 90 A76A semipack skkh 106 SKKD380 A36 diode semipack skkt 330
|
Original |
||
biconvex lens with focal length 1 m and diameter 25.4 mm
Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
|
Original |
658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011 | |
THOMSON-CSF Power Laser diodeContextual Info: HFLM 3306 HIGH FREQUENCY LASER DIODE MODULE DESCRIPTION The HFLM 3306 product is a compact package, High Frequency Laser Diode Module. Basic component is a low threshold GaInAsP/InP BH laser diode made by Low pressure Metal Organic Chemical Vapor Deposition process, optimized |
Original |
||
305-0065-780
Abstract: TOLD9225M TOLD9442M 35-3600 laser diode lifetime lens laser diode DL3038-033 DL3147-261 ML1013R AT/305-0065-780
|
Original |
635nm 785nm DL3038-033 DL4038-031 OLD9442M OLD9231M OLD9225M ML44126N 01JAN01 305-0065-780 TOLD9225M TOLD9442M 35-3600 laser diode lifetime lens laser diode DL3038-033 DL3147-261 ML1013R AT/305-0065-780 | |
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DB-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DB-66S ● IF . 1200A ● VRRM . 3300V |
Original |
RM1200DB-66S 18K/kW | |
RM1200DGContextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200DG-66S ● IF . 1200A ● VRRM . 3300V |
Original |
RM1200DG-66S 18K/kW RM1200DG | |
RM400DY-66SContextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DY-66S ● IF . 400A ● VRRM . 3300V |
Original |
RM400DY-66S 72K/kW RM400DY-66S | |
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DY-66S ● IF . 400A ● VRRM . 3300V |
Original |
RM400DY-66S 100A/Â 72K/kW | |
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM1200HE-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM1200HE-66S ● IF . 1200A ● VRRM . 3300V |
Original |
RM1200HE-66S 20K/kW | |
Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM600DY-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM600DY-66S ● IF . 600A ● VRRM . 3300V |
Original |
RM600DY-66S 450A/Â 48K/kW | |
RM400DG-66SContextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM400DG-66S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM400DG-66S ● IF . 400A ● VRRM . 3300V |
Original |
RM400DG-66S Scre000 18K/kW RM400DG-66S | |
rm1200h
Abstract: rm1200he-66s
|
Original |
RM1200HE-66S 20K/kW rm1200h rm1200he-66s | |
|
|||
RM1200DB
Abstract: RM1200DB-66S
|
Original |
RM1200DB-66S 18K/kW RM1200DB RM1200DB-66S | |
RM600DY-66SContextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM600DY-66S HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM600DY-66S ● IDC . 600A ● VRRM . 3300V |
Original |
RM600DY-66S RM600DY-66S | |
RM400DY-66SContextual Info: MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY-66S HIGH POWER SWITCHING USE INSULATED TYPE HVDi High Voltage Diode Module RM400DY-66S ● IDC . 400A ● VRRM . 3300V |
Original |
RM400DY-66S RM400DY-66S | |
5SLD1000N330300
Abstract: 5SYA2039 diode in 400 1000N330300 UC1250
|
Original |
1000N330300 CH-5600 5SLD1000N330300 5SYA2039 diode in 400 UC1250 | |
Contextual Info: Data Sheet, Doc. No. 5SYA 1435-00 09-2013 5SLG 0500P330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 500 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
Original |
0500P330300 CH-5600 | |
Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode Smooth switching SPT diode for good EMC Industry standard package High power density AlSiC base-plate for high power cycling |
Original |
1200J330100 UL1557, E196689 CH-5600 | |
5SLD 1000N330300Contextual Info: Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
Original |
1000N330300 CH-5600 5SLD 1000N330300 | |
5SLD 1200J330100Contextual Info: VRRM = IF = 3300 V 1200 A ABB HiPakTM DIODE Module 5SLD 1200J330100 Doc. No. 5SYA 1566-00 June 06 • Low-loss, rugged SPT diode • Smooth switching SPT diode for good EMC • Industry standard package • High power density • AlSiC base-plate for high power |
Original |
1200J330100 CH-5600 5SLD 1200J330100 | |
5SLG 0500P330300Contextual Info: Data Sheet, Doc. No. 5SYA 1435-01 01-2014 5SLG 0500P330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 500 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
Original |
0500P330300 CH-5600 5SLG 0500P330300 | |
Contextual Info: Data Sheet, Doc. No. 5SYA 1435-01 01-2014 5SLG 0500P330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 500 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance |
Original |
0500P330300 UL1557, E196689 CH-5600 |