DIODE 31D Search Results

pn junction diode structure

Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Contextual Info: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss

FCH20U10

Abstract: niec FCHS10A12 FCU20A40 FCU10UC30 FCQ10U06 FSF05B60 SA10QA03 fchs20a08 10ERB20 FCQS30A045
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 3rd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

schottky barrier diode b22

Abstract: FCH20U10 Schottky Diode B29 fcu20a40 10ERB20 niec FCHS10A12 FCQS10A065 EC30QSA045 FCHS10A12 fchs20a08
Contextual Info: Rectifier, Fast Recovery, and Schottky Diode SHORT FORM CATALOG 2009 2nd Edition NIEC for your better life. Latest Data sheets are available at http://www.niec.co.jp/ Contents Page Rectifier Diode Axial SOD-123 SMA Narrow SMC TO-220F-2pin B2 B3 B3 B3 B3 Fast Recovery Diode

Contextual Info: 3A Avg. 600Volts 31DF6 Fast Recovery Diode DSE-13050（1/2） 外形寸法図 構造：拡散型シリコンダイオード（FRD），リード線型 Dimension : mm OUTLINE DRAWING Package : Axial 6 Construction :Diffusion-type Silicon Diode，Axial Lead Type

Contextual Info: WSR05 LOW CAPACITANCE DIODE ARRAY P b Lead Pb -Free DESCRIPTION: TRANSIENT VOLTAGE SUPPERSSORS 5.0 VOLTS WSR05 are surge rated diode arrays designed to protect high speed data components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge),

Contextual Info: SLD302XT SONY. 200mW High Power Laser Diode Description SLD302XT is a gain-guided, high-power laser diode with a built-in TE cooler. A new flat, square package with a low thermal resistance and an in-line pin configuration is employed. Fine tuning of the wavelength is possible by

31DF2 diode

Abstract: 31DF2 31DF1
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 2 00 V /trr : 30nsec 31DF1 31DF2 FEATURES ° Ultra - Fast Recovery 0 Low Forward Voltage Drop ° Low Power Loss, High Efficiency 0 High Surge Capability »100 Volts thru 600 Volts Types Available MAXIMUM RATINGS \ type Voltage Rating

Contextual Info: SCHOTTKY BARRIER DIODE 3.3a /9o ~ 31DQ09 31DQ10 ioov FEATURES ° Low Forward Voltage Drop 5 Low Power Loss, High Efficiency ° High Surge Capability 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S \ type Voltage Rating ♦31DQ09 31DQ10 Unit

TIC 103a

Abstract: 31DF6 35NSEC
Contextual Info: FAST RECOVERY DIODE 31DF6 3.3A /600V /trr: 35nsec FEATURES o Ultra-Fast Recovery o Low Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability o 100 Volts through 600 Volts Types Available MAXIMUM RATINGS Voltage Rating " " \T y p e

31DQ09

Abstract: 31DQ10
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEA TU RES ° Low Forward Voltage Drop • Low Power Loss, High Efficiency ° High Surge Capability "30 Volts through 100 Volts Types Available MAXIMUM RA TING S Voltage Rating \ type Symbol\. ♦31DQ09 31DQ 10

3IDF2

Abstract: 31DF2 7 31DF2 diode diode 3IDF2 31DF2 200v 3A ultra fast recovery diode 31DF1 31DF
Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 30nsec 31DF1 31DF2 FEATURES ^-5.8 .23 DIA 1 ° Ultra - Fast Recovery ° Low Forward Voltage Drop l.Sf.OSWp.r* 1.3C051) 8 Low Power Loss, High Efficiency ° High Surge Capability »100 Volts thru 600 Volts Types Available

Diode 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 3.3A/50— 60V 31DQ05 31DQ06 FEA TU R E S ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM RATING S \ tïpe Voltage Rating ♦ 31DQ05 31DQ06

Contextual Info: SCHOTTKY BARRIER DIODE 310Q03 31DQ04 3.3A/30— 40A FEATURES ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available MAXIMUM R A T IN G S Voltage Rating " \ type ♦ 3 1DQ0 3 31DQ04

Contextual Info: FAST RECOVERY DIODE 31DF6 3.3A/600V/trr: 35nsec FEATURES -ó ¡Vi5.8 .23 DIA O Ultra-Fast Recovery o Low Forward Voltage Drop 1.5(.059)nI<| 1.3(.051) o Low Power Loss, High Efficiency o High Surge Capability 21(.83) M IN o 100 Volts through 600 Volts Types Available

Diode 31DQ04

Abstract: 31DQ04 31DQ03 4vua
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a / 3 0 ~ 4 0 a FEATURES ° Low Forward Voltage Drop 5.8^.23 DIA ' Low Power Loss, High Efficiency 1.5 .059) DIA 1.3(.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available 10(.39) MAX

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ09 31DQ10 3.3A/90~100V FEATURES ° Low Forward Voltage Drop 5.8 .23 DIA • Low Power Loss, High Efficiency 1.5(.059)nT. ° High Surge Capability 1.3(.05l) »30 Volts through 100 Volts Types Available 21(.83) MIN 10(.39) MAX 1.5(.059)nT,

Contextual Info: FAST RECOVERY DIODE 3.3A/100— 200V/trr : 30nsec 31DF1 31DF2 FEATURES 4 £^-5.8.23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.5 .059) DIA 1.3(.051) ° Low Power Loss, High Efficiency 21(.83) MIN ° High Surge Capability »100 Volts thru 600 Volts Types Available

Contextual Info: SCHOTTKY BARRIER DIODE 31DQ03 31DQ04 3.3a /3 0 ~ 4 0 a FEA TU RES ► - 5.8 .23)DIA ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency n +[ 1.5(.059) r>, a |¡ 1.3^.051) ° High Surge Capability 21(.83) MIN o 30 Volts through 100 Volts Types Available

Contextual Info: FAST RECOVERY DIODE 3.3A /300— 4 0 0 V /trr : 30nsec 31DF3 31DF4 FEATURES 5.8 .23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.5(.059) DIA 1.3(.051) ° Low Power Loss, High Efficiency 21(:83) MIN » High Surge Capability »100 Volts thru 600 Volts Types Available

Diode 31DQ06

Abstract: Diode 31DQ05 31DQ05 31DQ06 BACR
Contextual Info: SCHOTTKY BARRIER DIODE 31DQ05 31DQ06 3.3A/50— 60V FEATURES ° Low Forward Voltage Drop 5.^.23 D IA ° Low Power L o s s , High Efficiency 1.5 .059) n l . 1.3(.051) ° High Surge Capability 21(.83) MIN 30 Volts through 100 Volts Types Available *Ü 1.5(.059) T-.T »

31DF4

Abstract: 31DF4 diode 400v 3a ultra fast recovery diode DF4 DIODE 31DF3
Contextual Info: FAST RECOVERY DIODE 3 .3 A /3 00 ~ 40 0V /trr:30n sec 31DF3 31DF4 -6 n + FEATURES A-5.8 .23 DIA ° Ultra - Fast Recovery ° Low Forward Voltage Drop 1.51059) 1.3(.051) • Lo w Power Loss, High Efficiency 21(:83) MIN » High Surge Capability o 100 Volts thru 600 Volts Types Available

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

DIODE 31D

Abstract: 31D DIODE
Contextual Info: bEE D • b427525 0D37Mbô 7bS « N E C E LIGHT EM ITTIN G DIODE NDL4103L1 850 nm O PT IC A L FIBER C O M M U N IC A T IO N S A IG a A s LIGHT EM IT TIN G D IO D E N E C ELECTRONICS INC D E S C R IP T IO N N D L4 1 0 3 L1 is an A IG aA s double heterostructure tight emitting diode, especially designed for a light source for optical fiber

Contextual Info: SCHOTTKY BARRIER DIODE s a /sov 3 1D Q 0 3 L FEATURES OLow Forward Voltage Drop o Low Power Loss, High Efficiency o High Surge Capability MAXIMUM RATINGS \ T y p e 31DQ03L V oltage R ating Unit S y m b o f\ Repetitive P eak R everse V oltage V RRM 30 V N on-Repetitive Peak Reverse