DIODE 30D Search Results

biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M mitsubishi laser diode OPHIR pd200 collimated LED 670 nm DL3147-011
Contextual Info: Laser Diodes, Optics, and Related Components - Optima Laser Diodes Laser Diode Mounting Kits Laser Diode Optics Glass Aspheric Lenses Plastic Aspheric Lenses Multi-element Lenses Diode Laser Modules OEM Diode Laser Modules Collimated Diode Lasers Optical Power

20B3 diode

Abstract: thermistor 1812
Contextual Info: LB5374 Laser Diode Module Description The LB5374 is a single longitudinal mode laser diode module. Features 1.3 |im DFB laser diode • High speed modulation up to 2.5Gb/s • Built-in 30dB optical isolator • Internal monitor photodiode, thermistor and thermo-electric cooler

Contextual Info: LB5374 Laser Diode Module Description The LB5374 is a single longitudinal mode laser diode module. Features • 1.3 im DFB laser diode • High speed modulation (up to 2.5Gb/s • Built-in 30dB optical isolator • Internal monitor photodiode, thermistor and thermo-electric cooler

BA423AL

Abstract: MBG238 td Diode
Contextual Info: Philips Semiconductors Product specification AM band-switching diode BA423AL FEATURES DESCRIPTION • Continuous reverse voltage: max. 20 V Leadless diode in a hermetically-sealed glass 30D80C SMD package with lead/tin plated metal discs at each end. • Continuous forward current:

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

LB7374

Contextual Info: LB7374 Laser Diode Module Description The LB7374 is a single longitudinal mode laser diode module. Features • 1.55 pm multi-quantum well MQW DFB laser diode with marrow spectral line width • High speed modulation (up to 2.5Gb/s) • Long distance transmission with no external modu­

tunnel diode

Contextual Info: LIMITER TUNNEL DIODE DETECTORS ML 7718-0000 SERIES DESCRIPTION T his series o f lim iter-detectors offers sim ilar performance advantages to the standard tunnel diode detectors but with extended RF input power range. A silicon PIN diode is integrated at the input o f the device to provide passive

GP-30DL

Abstract: 30DL
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS

MCE 2000

Contextual Info: SURFACE MOUNT PIN DIODE ATTENUATOR MODEL PI-810 150-2000 MHz FEATURES: • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ir Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

Contextual Info: DNA3865-01 Diodes RF Noise Generator Diode Semiconductor MaterialSilicon Package StyleMicro-I Mounting StyleS Description100MHz to 18GHz;30dB typical noise ratio;800mW max power consumption

Contextual Info: BAV84 Diodes Matched Configuration Diode Semiconductor MaterialSilicon Package StyleDO-35 Mounting StyleT DescriptionMatched pair;F .30dB;ZiF 25ohm;VBR 25V;F 7.5dB;ZiF 100 300ohm.

PI-810

Abstract: 3530MHz PI-820 MCE 2000
Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

27K resistor datasheet

Abstract: CHE1270a98F
Contextual Info: CHE1270a RoHS COMPLIANT 10-44GHz Wide Band Detector GaAs Monolithic Microwave IC Description RF IN Matching The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref).

PI-820

Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

ceramic attenuator MHz

Contextual Info: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150-2000 MHz FEATURES ‘ PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

PI-810

Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

CHE1270a98F

Contextual Info: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching

PI-810

Abstract: 501V PI-820
Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-810 150–2000 MHz FEATURES • PCS Frequency Coverage: 150-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

Contextual Info: ZOWIE Low VF Rectifier Diode GP30DLH THRU GP30MLH Low VF Rectifier Diode VF < 0.90V @IF = 3A FEATURES IFSM = 140Amp Halogen-free type GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Compliance to RoHS product Low forward voltage drop

PI-820

Contextual Info: SURFACE MOUNT–CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800–2000 MHz FEATURES • PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode ␲ Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

GP-30DL

Abstract: GP30DL GP30ML
Contextual Info: ZOWIE Low VF Rectifier Diode GP30DL THRU GP30ML Low VF Rectifier Diode VF < 0.90V @IF = 3A IFSM = 140Amp FEATURES GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead free product, compliance to RoHS Low forward voltage drop

Contextual Info: LB7374 Laser Diode Module Description T he L B 7374 is a single longitudinal m ode laser diode m odule. Features • 1.55 pm m ulti-quantum well M Q W DFB laser diode w ith m arrow spectral line w idth • H igh speed m odulation (up to 2.5G b/s) • Long distance transm ission w ith no external m odulator (up to 80 km )

5dp diode

Contextual Info: SURFACE MOUNT-CERAMIC ATTENUATOR, PIN DIODE MODEL PI-820 800-2000 MHz FEATURES ‘ PCS Frequency Coverage: 800-2000 MHz • Balanced 4 Diode tt Configuration Increases Attenuation and Doubles Upper Frequency Limit • Low VSWR and Flat Attenuation Characteristics

Contextual Info: CHE1270a RoHS COMPLIANT 12-40GHz Wide Band Detector GaAs Monolithic Microwave IC Description The CHE1270a is a detector that integrates a matched detection diode Vdet . A reference diode is also available to be used in differential mode (Vref). RF IN Matching