DIODE 28A Search Results

Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30D100J APT2X31D100J 27 2 T- 4 APT2X31D100J 1000V 28A APT2X30D100J 1000V 28A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

Contextual Info: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide ‚ l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible 

darlington NPN 600V 8a transistor

Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

GW50H60DF

Abstract: GW50
Contextual Info: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • High speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

R222 smd

Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Contextual Info: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP

GW50H60DF

Abstract: STGW50H60DF
Contextual Info: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode

AM01504v1

Abstract: GW50H60DF
Contextual Info: STGW50H60DF 50 A, 600 V field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time ■ Ultrafast soft recovery antiparallel diode

CMOD2004

Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

GP14NC60

Abstract: GF14NC60 GF14NC GB14NC60 GB14NC60KD gf14nc6 gf14nc60k gb14nc GB14NC6 JESD97
Contextual Info: STGB14NC60KD STGF14NC60KD - STGP14NC60KD 14 A - 600 V - short circuit rugged IGBT Features 2 • Low on-voltage drop VCE(sat ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Switching losses include diode recovery energy ■ Very soft ultra fast recovery antiparallel diode

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

Contextual Info: IMBD4448 VISHAY Vishay Semiconductors Small Signal Diode Features 3 • Silicon Epitaxial Planar Diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • This diodes are also available in other case styles including: the DO-35 case with the type

Contextual Info: PD - 96371A IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

MSK4357

Abstract: 1000 Amp current diode
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)

Contextual Info: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V

CPD74

Contextual Info: PROCESS CPD74 Switching Diode Monolithic Isolated Quad Switching Diode Chip PROCESS DETAILS Die Size 25 x 25 MILS Die Thickness 6.0 MILS Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS Top Side Metalization

DB82

Abstract: China power laser diode price list Coherent B1-885-20C-19-30-A high power laser diode price list
Contextual Info: 885 nm Bars Laser Diodes Linear Array CW Bars Laser diode bars, based on our aluminum-free active area AAA , laser diode technology give you high power and long-life performance in the 885 nm wavelength range. Because there’s no aluminum, there’s no oxidation at the facets — the leading

71307

Contextual Info: Si4852DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A

C6B3

Abstract: 6B31 b 0743 2BA diode transistor k31 HFA45HC120C
Contextual Info: International E«g]Rectifier HEXFRED PD-2.375 Provisional Data Sheet HFA45HC120C ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics Vbr per leg 1200V, 28A Units 1200 V lF(AV) 28 A trr (pet leg> 135 ns Q rr (per leg)

semikron skiip 33

Contextual Info: SKiiP 28AC066V1 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter *#4   A * #4 4 . '& /9  

30D100J

Abstract: apt2x30d100j 30D100 2878 sgs
Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X30D100J 3 4 2 1 3 4 Parallel APT2X31D100J 7 22 TO S "UL Recognized" ISOTOP ® APT2X31D100J APT2X30D100J 1000V 1000V 28A 28A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES

Contextual Info: GenX3TM 1400V IGBTs w/ Diode IXGH28N140B3H1 IXGX28N140B3H1 IXGK28N140B3H1 Avalanche Rated VCES = 1400V IC110 = 28A VCE sat ≤ 3.60V TO-247 (IXGH) G Symbol Test Conditions VCES TJ = 25°C to 150°C 1400 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1400 V VGES

Contextual Info: 2 1 3 4 2 1 Anti-Parallel APT2X30D100J 3 4 2 1 3 4 Parallel APT2X31D100J 7 22 TO S "UL Recognized" ISOTOP ® APT2X31D100J APT2X30D100J 1000V 1000V 28A 28A DUAL DIE ISOTOP® PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT FEATURES PRODUCT APPLICATIONS