transistor C2075
Abstract: g10 smd transistor SMD Transistor 1c
Text: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from
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74bbasi
H11A1
H11A1Z
H11A1
E50151
MCT9001
transistor C2075
g10 smd transistor
SMD Transistor 1c
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-03 HIGH EFFICIENCY RED Features Description !SUBMINIATURE PACKAGE. The High Efficiency Red source color devices are made !GULL WING. with Gallium Arsenide Phosphide on Gallium Phosphide ! LONG Orange Light Emitting Diode.
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KM-27EC-03
1000PCS
DSAD0284
FEB/06/2003
KM-27EC-03
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-08 HIGH EFFICIENCY RED Features Description !SUBMINIATURE PACKAGE. The High Efficiency Red source color devices are made !WIDE VIEWING ANGLE. with Gallium Arsenide Phosphide on Gallium Phosphide ! YOKE Orange Light Emitting Diode.
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KM-27EC-08
1000PCS
DSAD0295
FEB/05/2003
KM-27EC-08
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S7E SMD TRANSISTOR
Abstract: No abstract text available
Text: DUALITY -TECHNOLOGIES CORP 27E D Bl QUALITY TECHNOLOGIES • 74bfciä51 Q0G3S4S 7 PHOTOTRANSISTOR OPTOCOUPLER T—41—83 MCT275 DESCRIPTION PACKAGE DIMENSIONS The MCT275 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bfciÃ
MCT275
MCT275
MCT9001
S7E SMD TRANSISTOR
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KM-27EC-08
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-08 Features HIGH EFFICIENCY RED Description SUBMINIATURE PACKAGE. The High Efficiency Red source color devices are made with WIDE VIEWING ANGLE. Gallium Arsenide Phosphide on Gallium Phosphide Orange YOKE LEAD. Light Emitting Diode.
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KM-27EC-08
1000PCS
DSAD0295
MAR/22/2005
KM-27EC-08
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-09 HIGH EFFICIENCY RED Features Description !SUBMINIATURE PACKAGE. The High Efficiency Red source color devices are made !WIDE VIEWING ANGLE. with Gallium Arsenide Phosphide on Gallium Phosphide ! Z-BEND LEAD. Orange Light Emitting Diode.
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KM-27EC-09
1000PCS
DSAA5383
FEB/09/2003
KM-27EC-09
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-10 HIGH EFFICIENCY RED Features Description !SUBMINIATURE PACKAGE. The High Efficiency Red source color devices !WIDE VIEWING ANGLE. are made with Gallium Arsenide Phosphide on !RIGHT ANGLE BEND. Gallium Phosphide Orange Light Emitting Diode.
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KM-27EC-10
DSAB4779
FEB/09/2003
KM-27EC-10
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Untitled
Abstract: No abstract text available
Text: dJUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES 27E D • 74tibfiSl Q003541 T PHOTOTRANSISTOR OPTOCOUPLER T -4 1 -8 3 MCT274 PACKAGE DIMENSIONS [f t DESCRIPTION The MCT274 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74tibfiSl
Q003541
MCT274
MCT274
C2090
C2079
MCT9001
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMP KM-27EC-09 HIGH EFFICIENCY RED Description Features SUBMINIATURE PACKAGE. The High Efficiency Red source color devices are made with WIDE VIEWING ANGLE. Gallium Arsenide Phosphide on Gallium Phosphide Orange Z-BEND LEAD. Light Emitting Diode.
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KM-27EC-09
1000PCS
DSAA5383
MAR/22/2005
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Untitled
Abstract: No abstract text available
Text: éJUALITY B TECH NOL OGIES CORP QUALITY TECHNOLOGIES 74t.fc.051 0QQ3t.Ql 2 27E D HIGH POWER GaAS INFRARED EMITTING DIODE PRELIMINARY M E5040 FEATURES PACKAGE DIMENSIONS PLAT DENOTES • Gallium arsenide infrared LED ■ Standard T-13/4 plastic package ■ Clear blue tint case
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E5040
100mA
100/is,
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Untitled
Abstract: No abstract text available
Text: 2UALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES PI 27E D • TMbbaSl GQQ3bQ3 b ■ GaAs INFRARED EMITTING DIODE MES750 FEATURES PACKAGE DIMENSIONS i ^ O u l p u t b #a m d ire ctio n C}<§> PFni-I I V - - jlU ABSOLUTE MAXIMUM RATINGS Gallium arsenide infrared LED
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MES750
100us
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Untitled
Abstract: No abstract text available
Text: 3UALITY TE CH NOL OGI ES CORP QUALITY TECHNOLOGIES 27E D 74bbflSl QGGHtDS T GaAs INFRARED EMITTING DIODE , . „ _ 7 ^ , MES770 FEATURES PACKAGE DIMENSIONS O u tp u t b e am d iré ctìO Q ^, S p h e r « * 1.S Gallium arsenide infrared LED Side view plastic package
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74bbflSl
MES770
74bbflSl
100us
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Untitled
Abstract: No abstract text available
Text: dUALITY TECHNOLOGIES CORP QUALITY TECHNOLOGIES e S7E D 7 4 h b Ö S 1 000354*1 4 PHOTOTRANSISTOR OPTOCOUPLERS T—41-83 MCT276 PACKAGE DIMENSIONS db The MCT276 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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MCT276
MCT276
m-78T
C2079
MCT9001
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Relay schrack RU
Abstract: omron relay G2R-2 8 pin 12V DC relay finder 12V DC Panasonic RELAY Cross Reference AROMAT hjq-22f 700-HN122 RELAY PCB DPDT 12V 8 pin 700-HC24 700-HN154 RELAY PCB DPDT 12V
Text: Relay Selection Guide Call 800 262.IDEC www.IDEC.com/relay RH Series - Compact Power Relays • Small industrial 10A GP relay • SPDT, DPDT, 3PDT, 4PDT contacts • Options: indicator LED, check-button and surge suppression diode • DIN rail, through panel, and PCB type sockets available
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AC12V
AC24V
AC120V
AC240V
DC12V
DC24V
DC48V
DC110V
AC110s
800-262-IDEC
Relay schrack RU
omron relay G2R-2 8 pin 12V DC
relay finder 12V DC
Panasonic RELAY Cross Reference AROMAT
hjq-22f
700-HN122
RELAY PCB DPDT 12V 8 pin
700-HC24
700-HN154
RELAY PCB DPDT 12V
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fast diode ejl b2
Abstract: ERD27 ERD27-10 ERD77 ERD77-10
Text: ERD27ERD77 10 A * 1 0 0 0 V » ± ^ 7 -y -r* -K • : Outline Drawings FAST RECOVERY DIODE Features '>3 Glass passivated chip High reverse voltage capability • X f yVM Stud mounted : Applications • X'i'yJ-'sÿV.ÏSIL • ■y-ay'*— • ' Switching power supplies
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ERD27
ERD77
ERD27-10,
ERD77-10
50HzJEKÃ
fast diode ejl b2
ERD27-10
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transistor c1684
Abstract: No abstract text available
Text: fiJUALITY T E C H N O L O G I E S 6 CORP 27 E QUALITY TECHNOLOGIES 1 D • 74fc,bflSl G 0 D 3 S 3 7 Ö phototrahs.stor optocouplhr ^ L MCT272 DESCRIPTION PACKAGE DIMENSIONS The MCT272 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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MCT272
MCT272
MCT9001
transistor c1684
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SMD Transistor AFR
Abstract: No abstract text available
Text: 3UALITY T E C H N O L O G I E S CO RP QUALITY TECHNOLOGIES O E7E D‘ 74bbfl51 Û D 0 3 S S 3 b PHOTOTRANSISTOR OPTOCOUPLER T-41-83 MCT277 PACKAGE DIMENSIONS The MCT277 is a phototransistor-type optically coupled isolator. A gallium arsenide infrared emitting diode is
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74bbfl51
T-41-83
MCT277
MCT277
C2090
15pseconds
MCT9001
SMD Transistor AFR
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5 pin relay 12vdc
Abstract: UF3-230VAC1 5 pin relay 12vdc 250VAC kuhnke relay UF3 24vdc kuhnke relay 24vdc Relays with single Changeover kuhnke uf3 24VDC relay UF3-230VAC relay SPCO 12V coil UF3-24VDC1
Text: Relays - Plug in TYCO SCHRACK The XT series relays are a new generation of plug in relays featuring a clear case and extra strong pins for greater mechanical strength. Also features a manual test lever as standard and a sensitive 400mW coil with built in led indication and suppression diode. Suitable for RT series
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400mW
400mW
27E129
20C249
5 pin relay 12vdc
UF3-230VAC1
5 pin relay 12vdc 250VAC
kuhnke relay UF3 24vdc
kuhnke relay 24vdc
Relays with single Changeover
kuhnke uf3 24VDC relay
UF3-230VAC
relay SPCO 12V coil
UF3-24VDC1
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Untitled
Abstract: No abstract text available
Text: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Vrrm Type V rs m = Ifrmsm Vrrm + / i 2dt Ifsm V TO Ifavm^ c rT Rthjc tv, max RthCK Maßbild Outline 100 V 10 m s, 10 m s, tv ,= tvj max t/j max W t» ,= tvj max sin
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Untitled
Abstract: No abstract text available
Text: âUALITY TECHNOLOGIES CORP S 7^ 051 57E D QUALITY TECHNOLOGIES 000350^ 4 m TO-18 SOLID STATE LAMP .7 W /-2 iT STANDARD RED M V 1 0 B DESCRIPTION The MV10B is a G a A s P light emitting diode mounted on a TO-18 header with a clear epoxy lens. On forward bias, it emits a spectrally narrow band of radiation which
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MV10B
C652A
C1832
C573A
C575A
MV10B
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3R3TI30E-080
Abstract: R611
Text: 3R3TI30E-080 y "f V K •U ”*f ' J X ^ v E ci- ^ '•Outline Drawings DIODE and TY R IS TO R M O D U LE : Features • > • i§i5w r'^?JS • ¡66H a v f y / G lass Passivatio n Chip E a s y C o n n e c tio n Insulated Type • d i/d tjR iSA ^ ? v.'
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3R3TI30E-080
50/60HzjEt
3R3TI30E-080
R611
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IT1701
Abstract: 2N4351 3N172 3N163 3N164 3N170 3N171 IT1750 M116 M117
Text: I HA R R I S S E M I C O N D S E C T O R 27E D T SeS i; O 4302 27 1 QD157G1 0 BBHAS g • T r'O l" 0 I T -Z -7-Z 5 Switching/Am plifier Transistors M O S F E T s — N -C h a n n e l PART NUMBER PACKAGE VGS TH I V Max Min BVds S V Min •dss pA Max •gss
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43G2E71
2N4351
3N170
3N171
IT1750
3N164
3N172
3N173
-10nA
IT1700
IT1701
3N163
M116
M117
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FND357
Abstract: FND360 FND357 7 segment FND COMMON CATHODE DISPLAY p7710
Text: DUALITY TEC HNOLOGIE S CORP 27E D QUALITY TECHNOLOGIES • 74bhflSl GQQ3b75 "1 0.362-INCH SEVEN SEGMENT DISPLAYS RED HIGH BRIGHT RED FND350 FND357 FND360 FND367 FEATURES Exactly identical to displays with same part number formerly manufactured by Fairchild Optoelectronics
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74bhflSl
GQQ3b75
362-INCH
FND350
FND357
FND360
FND367
FND350,
FND360,
FND367
FND357
FND357 7 segment
FND COMMON CATHODE DISPLAY
p7710
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Untitled
Abstract: No abstract text available
Text: SUBMINIATURE SOLID STATE LAMPS ! WIDE KM-27EC-10 KM-27SGD-10 KM-27SGC-10 KM-27YD-10 KM-27YC-10 Description Features !SUBMINIATURE KM-27ID-10 The High Efficiency Red source color devices are made PACKAGE. with Gallium Arsenide Phosphide on Gallium Phosphide
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KM-27ID-10
KM-27SGD-10
KM-27YD-10
KM-27EC-10
KM-27SGC-10
KM-27YC-10
KM-27ID-10
KM-27EC-10
KDA0624
SEP/30/2001
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