1Z51
Abstract: No abstract text available
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s
|
Original
|
PDF
|
1Z390
1Z30A
1Z51
|
1Z10
Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs
|
Original
|
PDF
|
1Z390
1Z30A
1Z390,
DO-15
SC-39
1Z10
1Z10A
1Z11
1Z11A
1Z12
1Z12A
1Z13
1Z30
1Z30A
|
1Z10
Abstract: 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30 1Z30A 1Z390
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS z Average Power Dissipation :P=1W z Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 s
|
Original
|
PDF
|
1Z390
1Z30A
1Z390,
DO-15
SC-39
1Z10
1Z10A
1Z11
1Z11A
1Z12
1Z12A
1Z13
1Z30
1Z30A
|
1Z12
Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12A 1Z13 1Z30 1Z30A 1Z390
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation :P=1W Peak Reverse Power Dissipation : PRSM = 200 W at tw = 200 µs : VZ = 6.2 V ~ 390 V
|
Original
|
PDF
|
1Z390
1Z30A
1Z390,
DO-15
SC-39
1Z12
1Z10
1Z10A
1Z11
1Z11A
1Z12A
1Z13
1Z30
1Z30A
|
1Z16
Abstract: 1Z47 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage
|
Original
|
PDF
|
1Z390
1Z30A
DO-15
SC-39
1Z16
1Z47
1Z10
1Z10A
1Z11
1Z11A
1Z12
1Z12A
1Z13
1Z30A
|
1z390
Abstract: No abstract text available
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs Zener Voltage
|
Original
|
PDF
|
1Z390
1Z30A
DO-15
SC-39
961001EAA2
1Z100
1Z110
1Z150
|
1Z150
Abstract: 1Z10 1Z10A 1Z11 1Z11A 1Z12 1Z12A 1Z13 1Z30A 1Z390
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390,1Z6.8A~1Z30A Unit: mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS l Average Power Dissipation : P = 1W l Peak Reverse Power Dissipation : PRSM = 200W at tw = 200µs
|
Original
|
PDF
|
1Z390
1Z30A
DO-15
SC-39
1Z150
1Z10
1Z10A
1Z11
1Z11A
1Z12
1Z12A
1Z13
1Z30A
|
1N4757A
Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Text: RECTRON 1N4728A THRU 1N4757A SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions
|
Original
|
PDF
|
1N4728A
1N4757A
DO-41
DO-41
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4757A
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
|
Untitled
Abstract: No abstract text available
Text: RECTRON 1N4728B THRU 1N4757B SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions
|
Original
|
PDF
|
1N4728B
1N4757B
DO-41
DO-41
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
|
Untitled
Abstract: No abstract text available
Text: 1SMA4741-200Z Surface-mount Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power SMA/DO-214AC FEATURES For surface-mount applications in order to optimize board space Low-profile package Built-in strain relief Glass-passivated junction Low inductance
|
Original
|
PDF
|
1SMA4741-200Z
SMA/DO-214AC
|
1N4742A JEDEC
Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A Z1200A
Text: 1N4728A THRU Z1200A 1W EPITAXIAL ZENER DIODE FEATURES DO-41 • Complete voltage range 3.3 to 200 Volts • High peak reverse power dissipation • High reliability • Low leakage current 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) MECHANICAL DATA 0.205 (5.20)
|
Original
|
PDF
|
1N4728A
Z1200A
DO-41
DO-41
UL94V-O
MIL-STD-202,
Z1120A
Z1130A
Z1150A
Z1160A
1N4742A JEDEC
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
Z1200A
|
ZENER DIODE 2.7V 1W
Abstract: 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4741A-1M200Z
Text: 1N4741A-1M200Z Glass-Passivated Junction Silicon Zener Diode Voltage range 11-200 Volts 1W Peak Power DO-41 FEATURES Low profile package Built-in strain relief Glass-passivated juction Low inductance Typical IR less than 5.0uA above 11V High temperature soldering guaranteed:
|
Original
|
PDF
|
1N4741A-1M200Z
DO-41
ZENER DIODE 2.7V 1W
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4741A-1M200Z
|
transistor p2w
Abstract: 80TP40 STTH2R02-Y STTH2R02 STTH2R02UY
Text: STTH2R02-Y Automotive ultrafast recovery diode Features • very low conduction losses ■ negligible switching losses ■ low forward and reverse recovery times ■ high junction temperature ■ AEC-Q101 qualified A K A Description K The STTH2R02 uses ST's new 200 V planar Pt
|
Original
|
PDF
|
STTH2R02-Y
AEC-Q101
STTH2R02
STTH2R02UY
transistor p2w
80TP40
STTH2R02-Y
STTH2R02UY
|
do-201 footprint
Abstract: be st smb STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U
Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt
|
Original
|
PDF
|
STTH4R02
O-220AC
STTH4R02D
STTH4R02
O-220FPAC
STTH4R02FP
O-220AC,
O-220FPAC,
DO-201AB,
STTH4R02B
do-201 footprint
be st smb
STTH4R02B
STTH4R02D
STTH4R02FP
STTH4R02S
STTH4R02U
|
|
|
do-201 footprint
Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt
|
Original
|
PDF
|
STTH4R02
O-220AC
STTH4R02D
STTH4R02
O-220FPAC
STTH4R02FP
O-220AC,
O-220FPAC,
DO-201AB,
STTH4R02B
do-201 footprint
STTH4R02B
STTH4R02D
STTH4R02FP
STTH4R02S
STTH4R02U
transistor p2w
4r2s
|
SMC/DOC-0000181564
Abstract: No abstract text available
Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt
|
Original
|
PDF
|
STTH4R02
O-220AC
STTH4R02D
STTH4R02
O-220FPAC
STTH4R02FP
O-220AC,
O-220FPAC,
DO-201AB,
STTH4R02B
SMC/DOC-0000181564
|
808nm 1W laser diode
Abstract: 808nm 1W 808nm W0808 PCW-CS-200-W0808 808nm VCSEL Laser diode laser 808nm 200mW laser diode 200mw
Text: 200mW Multi-Mode 808nm VCSEL Diode Part # PCW-CS-200-W0808 • • • • • Vertical-Cavity Surface-Emitting Laser technology >200mW CW multi-mode power at 808nm Circular, low-diverging beam Custom wavelengths available 808-1064nm Custom packaging available (submount, Cmount, TO can)
|
Original
|
PDF
|
200mW
808nm
PCW-CS-200-W0808
808nm
808-1064nm)
270mA,
200mW,
808nm 1W laser diode
808nm 1W
W0808
PCW-CS-200-W0808
808nm VCSEL Laser
diode laser 808nm 200mW
laser diode 200mw
|
Untitled
Abstract: No abstract text available
Text: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time
|
Original
|
PDF
|
STTH1202
O-220FPAC
O-220AC
O-220AC
STTH1202D
STTH1202FP
STTH1202DI
STTH1202
|
Untitled
Abstract: No abstract text available
Text: STTH1202 Ultrafast recovery diode Main product characteristics IF AV 12 A VRRM 200 V Tj (max) 175° C VF (typ) 0.82 V trr (typ) 18 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time
|
Original
|
PDF
|
STTH1202
O-220AC
STTH1202D
O-220FPAC
STTH1202FP
STTH1202DI
STTH1202
|
jdsu 2380
Abstract: 2360a JDSU 2400 laser diode jdsu laser diode 6 GHz
Text: COMMERCIAL LASERS Diode Lasers, 0.5 to 4.0 W, 8xx nm 2300 Series Key Features • 0.5, 1.2, 2.0 and 4.0 W CW power • 50, 100, 200 and 500 µm apertures • High-efficiency MOCVD quantum well design • Open heatsink package • High reliability Applications
|
Original
|
PDF
|
498-JDSU
5378-JDSU
2300DIODELASER
jdsu 2380
2360a
JDSU 2400
laser diode jdsu
laser diode 6 GHz
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 1Z6.2~1Z390,1Z6.8A~1Z30A TO SHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2-1Z390, 1Z6.8A-1Z30A Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS & Average Power Dissipation : P=1W Peak Reverse Power Dissipation : P r s M“ 200W at tw = 200/¿s
|
OCR Scan
|
PDF
|
1Z390
1Z30A
2-1Z390,
A-1Z30A
DO-15
SC-39
|
T 1Z12
Abstract: 1z12 toshiba
Text: 1Z6.2~1Z390,1Z6.8A~1Z30A T O SH IB A TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION TYPE 1Z6.2~1Z390, 1Z6.8A 1Z3QA Unit in mm CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS • • • • Average Power Dissipation : P = 1W Peak Reverse Power Dissipation : P r SM~^ÛOW at ^ = 200/^8
|
OCR Scan
|
PDF
|
1Z390
1Z30A
1Z390,
CATH390
T 1Z12
1z12 toshiba
|
1N914
Abstract: No abstract text available
Text: • 1N914UR AVAILABLE IN JAN, 1N914UR and CDLL914 JANTX, AND JANTXV PER MIL-PRF-195QQ/116 • SWITCHING DIODE • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +200°C
|
OCR Scan
|
PDF
|
1N914UR
MIL-PRF-195QQ/116
CDLL914
IN914UR
1N914
|
1ZB36
Abstract: 1ZB220-Y ZB30 1ZB20 zener 1ZB30 DIODE 1zb36 zener B5.1 ZB91 B5.1 zener ZB2 ZENER
Text: 1ZB6.8 1ZB390 SILICON DIFFUSED TYPE ZENER DIODE CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. . Average Power Dissipation : P=1W . Peak Reverse Power Dissipation : Pr s m = 200W at tw=200 Js . Zener Voltage : Vz=6.8~390V . T o l e r a n c e of Z e n e r V o l t a g e
|
OCR Scan
|
PDF
|
1ZB390
1ZB330-X)
1ZB13
1ZB16
1ZB18
1ZB20
1ZB27
1ZB33
1ZB36
1ZB220-Y
ZB30
1ZB20 zener
1ZB30
DIODE 1zb36
zener B5.1
ZB91
B5.1 zener
ZB2 ZENER
|
