DIODE 1SS133
Abstract: 1SS133
Text: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters
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1SS133
130mA
DO-34
DO-34
100uA
100mA
to100KHZ
1-Jun-03
DIODE 1SS133
1SS133
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1SS131
Abstract: 1S1555 1s1555 diode 1SS130 10 35 DIODE 1SS132 1SS134 1S1553 1SS133 1SS141
Text: BL GALAXY ELECTRICAL 1S-SERIES SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode
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DO-34
DO-35,
1S1553
1S1555
1SS130
1SS132
1SS133
1SS134
1SS141
1SS144
1SS131
1S1555
1s1555 diode
1SS130
10 35 DIODE
1SS132
1SS134
1S1553
1SS133
1SS141
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1S2473 DIODE equivalent
Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5
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HSN278WK"
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
1S2473 DIODE equivalent
1S2473 equivalent
diode cross reference 1s2473
DIODE marking S4 59A
marking 62N SOT23
1S2471 equivalent
UHF/VHF TV Tuner HITACHI
DIODE 1N4148 LL-34
DIODE ZENNER C25
1N52xx
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DIODE 1SS133
Abstract: 1SS133 1ss133 diode diode
Text: Diodes High–speed switching diode 1SS133 FApplications High speed switching FExternal dimensions Units: mm FFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (typical recovery time = 1.5ns) FConstruction Silicon epitaxial planar
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1SS133
DIODE 1SS133
1SS133
1ss133 diode
diode
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Untitled
Abstract: No abstract text available
Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol
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1SS133
1-Jan-2006
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1SS133
Abstract: No abstract text available
Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol
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1SS133
Fax0755-8324
1SS133
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1SS133
Abstract: No abstract text available
Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol
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1SS133
1-Nov-2006
DO-34
1SS133
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1SS133 T77
Abstract: diode T-77 1SS133 1SS133 T-77 T-77 diode T77 t 77 do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T77
diode T-77
1SS133
1SS133 T-77
T-77
diode T77
t 77
do-34 rohm
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1SS133
Abstract: No abstract text available
Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol
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1SS133
1-Sep-2009
DO-34
1SS133
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1SS133 T-77
Abstract: No abstract text available
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133 T-77
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1SS133
Abstract: do-34 rohm
Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction
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1SS133
DO-34
1SS133
do-34 rohm
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1SS133
Abstract: 1ss133 diode
Text: 1SS133 High-speed switching diode Features 1. Glass sealed envelope. 2. High reliability. 3. High speed. Applications High speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Ta=25℃ Parameter Symbol Limits Unit Parameter Symbol
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1SS133
1SS133
1ss133 diode
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SEMTECH 1SS133
Abstract: 1SS133
Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage
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1SS133
100mA
SEMTECH 1SS133
1SS133
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SEMTECH 1SS133
Abstract: 1SS133
Text: 1SS133 HIGH SPEED SWITCHING DIODE Features • Glass sealed envelope. MSD • High speed. (trr = 1.2ns Typ.) • High reliability. Construction • Silicon epitaxial planar. Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Limits Unit Peak Reverse Voltage
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1SS133
100mA
SEMTECH 1SS133
1SS133
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1SS133
Abstract: No abstract text available
Text: 1SS133 Diodes High-speed switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND !Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1.2ns Typ.) φ0.4±0.1 22Min. φ1.8±0.2 22Min.
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1SS133
22Min.
DO-34
1SS133
Colo80
1/10IR
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1SS133
Abstract: 29010
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1/10IR
1SS133
29010
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1SS133
Abstract: diode 1ss133
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1SS133
diode 1ss133
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1SS133
Abstract: No abstract text available
Text: 1SS133 Diodes Switching diode 1SS133 !External dimensions Units : mm !Applications High speed switching CATHODE BAND (YELLOW) φ0.4±0.1 !Features 1) Glass sealed envelope. (MSD) 2) High speed. (trr=1.2ns Typ.) 3) High reliability. 29.0±1.0 29.0±1.0 2.7±0.3
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1SS133
DO-34
1SS133
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1SS133
Abstract: No abstract text available
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 90 V CURRENT: 0.2 A FEATURES DO - 34 GLASS Glass sealed envelope. (MSD) VRM=250V guaranteed High reliability MECHANICAL DATA Case: DO-34, glass case Polarity: Color band denotes cathode
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1SS133
DO-34,
1/10IR
1SS133
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1SS133
Abstract: DIODE 1SS133
Text: LESHAN RADIO COMPANY, LTD. Switching diode 1SS133 . 300mW DO-34 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C TYPE VRM(V) VR(V) IFM(mA)
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1SS133
300mW
DO-34
5000pcs/each
260mm
1SS133
DIODE 1SS133
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1SS133
Abstract: v405
Text: BL GALAXY ELECTRICAL SMALL SIGNAL SWITCHING DIODE 1SS133 REVERSE VOLTAGE : 35 V CURRENT: 110 mA FEATURES DO - 35 GLASS Glass sealed envelope. (MSD) High reliability MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode Weight: 0.005 ounces, 0.14 grams
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1SS133
DO-35,
400TANCE
1/10IR
1SS133
v405
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1SS133
Abstract: No abstract text available
Text: 1SS133 HIGH SPEED SWITCHING DIODE DO - 34 Glass FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free 1.00 25.4 min. 0.078 (2.0 )max. 0.118 (3.0) max. Cathode
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1SS133
DO-34
1SS133
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1ss133m
Abstract: do-204
Text: 1SS133M Pb 300mW Hermetically Sealed Glass Switching Diode RoHS COMPLIANCE DO-34 Features Fast switching device TRR<4.0nS DO-34 package (JEDEC DO-204) Through-hole device type mounting Hermetically sealed glass Compression bonded construction
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1SS133M
300mW
DO-34
DO-34
DO-204)
1/10IR
1SS133M)
1ss133m
do-204
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1SS133
Abstract: 1ss133 diode DIODE 1SS133 ROHM 1SS133 diode switching do-34 rohm yellow band glass diode
Text: 1SS133 Diodes High-speed switching diode 1SS133 ! Applications External dim ensions Units : mm High speed switching ! Features 1) Glass sealed envelope. (MSD) 2) High reliability. 3) High speed. (trr=1,2ns Typ.) I Construction Silicon epitaxial planar ! Absolute maximum ratings (Ta=25°C)
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1SS133
1SS133
1ss133 diode
DIODE 1SS133
ROHM 1SS133
diode switching do-34 rohm
yellow band glass diode
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