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    DIODE 1N4001 CHARACTERISTICS Search Results

    DIODE 1N4001 CHARACTERISTICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE 1N4001 CHARACTERISTICS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001 thru 1N4007 Pb Free Plating Product Pb 1N4001 thru 1N4007 1.0 Ampere DO-41 Package Silicon Diode DO-41 Features Unit: inch mm • Low forward voltage drop • High current capability • High surge current capability .034(.86) 1.0(25.4)MIN. .028(.71)


    Original     		1N4001 1N4007 DO-41 DO-41 MIL-STD-202 PDF

    diode 1N4001 specifications

    Abstract: No abstract text available
    Text: 1N4001 – 1N4007 WTE POWER SEMICONDUCTORS Pb 1.0A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-41, Molded Plastic


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, DO-41 diode 1N4001 specifications PDF

    SURFACE MOUNT SILICON RECTIFIER

    Abstract: DO-214AC, SMA 1N4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) SURFACE MOUNT SILICON RECTIFIER DO-214AC, SMA 1N4007 PDF

    1N4007 sma

    Abstract: 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA 1N4001 1N4007 NRD4003
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) 013mm) 50mVp-p 1N4007 sma 1N4007 DO-214AC DIODE 1N4001 CHARACTERISTICS DIODE 1N4007 1N4001 SMA NRD4003 PDF

    Untitled

    Abstract: No abstract text available
    Text: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.


    OCR Scan     		0SDM33fl 1N4001, PDF

    surface mount diode w1

    Abstract: 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount diode w1 1N4007 RECTIFIER DIODE surface mount 1n4007 1N4001 SMA silicon diode 1N4001 specifications 1N4007 sma NRD4007 1N4007 DO-214AC EIA rs 481 surface mount PDF

    surface mount 1n4007

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES • • • • • • VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) RS-481-A surface mount 1n4007 PDF

    1n4001 trr

    Abstract: No abstract text available
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250OC/10 SECONDS


    Original     		1N4001 1N4007 250OC/10 SMA/DO-214AC EIA-RS-481) NRD4001 NRD4007) 1n4001 trr PDF

    diode rectifier 1n4001

    Abstract: NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007
    Text: Surface Mount Silicon Rectifier Diode NRD Series FEATURES VOLTAGE: 50 TO 1000 VOLTS, CURRENT; 1.0 AMPERE CORRESPONDS TO 1N4001 THRU 1N4007 IN SURFACE MOUNT PACKAGE FLAT PACK - LOW PROFILE, FOR SURFACE MOUNT APPLICATIONS GLASS PASSIVATED CHIP CONSTRUCTION HIGH TEMPERATURE SOLDERING 250°C/10 SECONDS


    OCR Scan     		1N4001 1N4007 EIA-RS-481) NRD4001 NRD4007) diode rectifier 1n4001 NIC Components 1N4007 CHARACTERISTICS DIODE 1N4007 rating NRD4007 PDF

    CHARACTERISTICS DIODE 1N4007

    Abstract: DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet
    Text: 1N4001 thru 1N4007 1.0A Standard Diode Features: • • • • • Diffused Junction Low Forward Voltage Drop High Current Capability High Surge Current Capability RoHS Compliant Mechanical Data: • • • • • • Case: DO−41, Molded Plastic Terminals: Plated Leads Solderable per MIL−STD−202, Method 208


    Original     		1N4001 1N4007 DO-41, MIL-STD-202, 1N4001 CHARACTERISTICS DIODE 1N4007 DIODE 1N4004 DIODE 1N4001 DIODE 1N4007 equivalent components of diode 1n4001 DIODE 1N4002 DIODE 1n4005 1N4007 DIODE data sheet 1N4007 diode 1n4007 diode datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SS rectifier DE I 4Ö5S4S2 4855452 INTERNATIONAL RECTIFIER □□D4C1G3 55C 04903 D Data Sheet No. PD-2.005C 7 '- ¿ > INTERNATIONAL RECTIFIER ^ ( 3 IOR 1N4D01 S E R IE S i.OAmp Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics


    OCR Scan     		1N4D01 1N4001 0004C 1N4001 ZQl-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4001~1N4007 1.0A Rectifier Features 1. High current capability 2. Low reverse leakage current 3. Low forward voltage drop 4. Plastic material – UL recognition flammability classification 94V – 0 Absolute Maximum Ratings Tj=25℃ Parameter Test Conditions


    Original     		1N4001 1N4007 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1-Jun-2004 PDF

    n4004 diode

    Abstract: n4005 N4002 diode N4003GL diode n4002 N4004 N4003 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode
    Text: 1N4001 G/L—1N4007G/L Vishay Lite-On Power Semiconductor 1.0A Glass Passivated Rectifier Features • Glass passivated die construction • Diffused junction • High current capability and low forward voltage drop • Surge overload rating to 30A peak •


    OCR Scan     		1N4001 1N4007G/L DO-41 N4002 N4003 N4004 N4005 N4006 N4007G n4004 diode N4002 diode N4003GL diode n4002 diode 1N4001 specifications DIODE 1N4001 WORKING n4005 diode PDF

    silicon diode 1N4001 specifications

    Abstract: 1N4001 rectifier diode 1N4001 specifications
    Text: Silicon Rectifier Formosa MS 1N4001 THRU 1N4007 List List. 1 Package outline. 2 Features. 2


    Original     		1N4001 1N4007 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051 silicon diode 1N4001 specifications 1N4001 rectifier diode 1N4001 specifications PDF

    CHARACTERISTICS DIODE 1N4002

    Abstract: DIODE 1N4001 DIODE 1N4001 VALUE OF MAX CURRENT DIODE 1N4001 characteristics diode 1N4001 specifications PL317F3 pin diagram ic lm317 1N4001 1N4002 2N3822
    Text: CYStech Electronics Corp. Spec. No. : C513F3 Issued Date : 2003.05.24 Revised Date : . . Page No. : 1/9 Three Terminal Adjustable Output Positive Voltage Regulators PL317F3 The PL317F3 is an adjustable 3–terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V.


    Original     		C513F3 PL317F3 PL317F3 UL94V-0 CHARACTERISTICS DIODE 1N4002 DIODE 1N4001 DIODE 1N4001 VALUE OF MAX CURRENT DIODE 1N4001 characteristics diode 1N4001 specifications pin diagram ic lm317 1N4001 1N4002 2N3822 PDF

    internal circuit diagram for ic 4047

    Abstract: 2N3822 equivalent 2N5640 equivalent IC 4047 DIODE 1N4001 CHARACTERISTICS DIODE 1N4002 DIODE 1N4001 VALUE OF MAX CURRENT 24V to 15V REGULATOR IC PL317E3 IC 4047 pin diagram
    Text: CYStech Electronics Corp. Spec. No. : C513E3 Issued Date : 2003.04.09 Revised Date : . . Page No. : 1/9 Three Terminal Adjustable Output Positive Voltage Regulators PL317E3 The PL317E3 is an adjustable 3–terminal positive voltage regulator capable of supplying in excess of 1.5 A over an output voltage range of 1.2 V to 37 V.


    Original     		C513E3 PL317E3 PL317E3 UL94V-0 internal circuit diagram for ic 4047 2N3822 equivalent 2N5640 equivalent IC 4047 DIODE 1N4001 CHARACTERISTICS DIODE 1N4002 DIODE 1N4001 VALUE OF MAX CURRENT 24V to 15V REGULATOR IC IC 4047 pin diagram PDF

    N4001 diode

    Abstract: DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications
    Text: 1N4001/L-1N4007/L Vishay Lite-On Power Semiconductor ▼ 1.OARectifier Features • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 3 0A peak • Low reverse leakage current • Plastic m aterial - UL R ecognition flam m ability


    OCR Scan     		1N4001/L-1N4007/L DO-41 N4001/L N4002/L N4003/L N4004/L N4005/L N4006/L N4007/L D-74025 N4001 diode DIODE n4007 n4007 diode diode n4001 n4004 diode n4005 N4007 N4002 diode N4003 diode 1N4001 specifications PDF

    LM350 to 220

    Abstract: LM 350T IC IC LM350TG
    Text: LM350 3.0 A, Adjustable Output, Positive Voltage Regulator The LM350 is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V to 33 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to


    Original     		LM350 2N5640 MPS2907 1N4001 LM350 LM350 to 220 LM 350T IC IC LM350TG PDF

    DIODE 4d

    Abstract: LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P
    Text: LDD P Series Laser Diode Drivers Pb GENERAL DESCRIPTION: The LDD P Series of laser diode drivers come in three compact models to work with all laser diode / photodiode configurations. Each model is available in 200mA and 400mA versions to best fit your laser


    Original     		200mA 400mA Aug-05 29-Sep-09 LDD200P-00400-A DIODE 4d LDD200-1P ldd200 LDD400-1P LDDCAB-50 LDD200-2P DIODE 1N4001 LDD200P-00400 LDD400-3P DD200-1P PDF

    lm350

    Abstract: 2N5640 MOTOROLA 2N3822 MOTOROLA IC LM350 2N5640 LM350 ON HEATSINK LM350T LM350T Equivalent LM350S LM350BT
    Text: Order this document by LM350/D LM350 Three-Terminal Adjustable Output Positive Voltage Regulator The LM350 is an adjustable three–terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V to 33 V. This voltage regulator is exceptionally easy to use and requires only


    Original     		LM350/D LM350 LM350 LM350/D* 2N5640 MOTOROLA 2N3822 MOTOROLA IC LM350 2N5640 LM350 ON HEATSINK LM350T LM350T Equivalent LM350S LM350BT PDF

    LM350

    Abstract: LM350 D LM 350T IC IC LM350 1N4001 transistor free free diode 1n4001 diodes IN4001 LM350 DATA SHEET LM350/D DIODE 1N4001 characteristics
    Text: LM350 3.0 A, Adjustable Output, Positive Voltage Regulator The LM350 is an adjustable three−terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V to 33 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to


    Original     		LM350 LM350 LM35t LM350/D LM350 D LM 350T IC IC LM350 1N4001 transistor free free diode 1n4001 diodes IN4001 LM350 DATA SHEET LM350/D DIODE 1N4001 characteristics PDF

    free diode 1n4001

    Abstract: LM350 adjustable switching power supply circuit diagram IC LM350 2N5640 LM350BT 1N4001 1N4002 IN4001 LM350T
    Text: ON Semiconductort 3.0 A, Adjustable Output, Positive Voltage Regulator The LM350 is an adjustable three–terminal positive voltage regulator capable of supplying in excess of 3.0 A over an output voltage range of 1.2 V to 33 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to


    Original     		LM350 r14525 LM350/D free diode 1n4001 adjustable switching power supply circuit diagram IC LM350 2N5640 LM350BT 1N4001 1N4002 IN4001 LM350T PDF

    TL496

    Abstract: TL496C TL496CD TL496CP 1N4001 TL496Y voltage regulator 9 volt DIODE 1N4001 characteristics
    Text: TL496C, TL496Y 9-V POWER-SUPPLY CONTROLLERS SLVS012B – AUGUST 1978 – REVISED AUGUST 1995 • • • • • D OR P PACKAGE TOP VIEW Internal Step-Up Switching Regulator Fixed 9-V Output Charges Battery Source During Transformer-Coupled-Input Operation


    Original     		TL496C, TL496Y SLVS012B TL496C TL496 TL496CD TL496CP 1N4001 TL496Y voltage regulator 9 volt DIODE 1N4001 characteristics PDF

    DIODE 1N4001

    Abstract: diode 1N4001 specifications TRANSISTOR D 1978 TL496CD TL496 1N4001 TL496C TL496CP TL496Y
    Text: TL496C, TL496Y 9-V POWER-SUPPLY CONTROLLERS SLVS012B – AUGUST 1978 – REVISED AUGUST 1995 • • • • • D OR P PACKAGE TOP VIEW Internal Step-Up Switching Regulator Fixed 9-V Output Charges Battery Source During Transformer-Coupled-Input Operation


    Original     		TL496C, TL496Y SLVS012B TL496C DIODE 1N4001 diode 1N4001 specifications TRANSISTOR D 1978 TL496CD TL496 1N4001 TL496CP TL496Y PDF