DIODE 1J Search Results

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he HI 1J series consists o f a gallium arsenide infrared emitting diode coupled with a light activated silicon bilateral switch, which functions

diode 1,5k

Abstract: diode 1fp
Contextual Info: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

SMD zener 562

Abstract: S102T current regulative diode T 5 Z 27-2.e S501T S-501T S-123T s-562t 562T CRD Diode crd e102
Contextual Info: CURRENT REGULATIVE DIODE CRD CRD is a diode which supplies constant current to an electric circuit, even when power supply voltage fluctuations or load impedance fluctuations occur. CRD is used for current stabilization and current limiting. Part number z1 1J 2

340 opto isolator

Contextual Info: ÛUALITY TECHNOLOGIES CORP S7E T> Optoisolator Specifications_ 74bbflSl 0004500 44fi I< 3T Y /* H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T he H l 1J series consists o f a gallium arsenide infrared emitting diode

Pulsed Laser 1550nm

Contextual Info: , N E C / / _PRELIMINARY DATA SHEET_ LASER DIODE NDL7553P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7553P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

DIODE 1SS133

Abstract: 1SS133
Contextual Info: 1SS133 SMALL SIGNAL DIODE VOLTAGE: 90V CURRENT: 130mA FEATURE DO-34 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-34 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.12g Dimensions in inches and millimeters

diode 1n4148

Abstract: 1N4148 75v 150mA diode DIODE 1N4148 characteristics thermal diode 1n4148
Contextual Info: 1N4148 SMALL SIGNAL DIODE VOLTAGE: 100V CURRENT: 150mA FEATURE DO-35 Silicon Single Junction Diode Fast switching Diode MECHANICAL DATA Case: DO-35 Glass case Polarity: color band denotes cathode Mounting position: any Weight: approx . 0.13g Dimensions in inches and millimeters

Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NDL8800P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^120 fjm InGaAs PIN PHOTO DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL8800P is an InGaAs PIN photo diode module with single mode fiber. NDL8800P is packaged in ceramic mini

Contextual Info: PRELIMINARY DATA SHEET PHOTO DIODE NDL8800P 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS ¿120 fjm InGaAs PIN PHOTO DIODE MINI-DIL PIGTAILED MODULE DESCRIPTION NDL8800P is an InGaAs PIN photo diode module with single mode fiber. NDL8800P is packaged in ceramic mini

MI32T

Contextual Info: CRO INFRARED EMITTING DIODE 02.94 “ 0.116 DESCRIPTION r 5 .L M I32T is GaAlAs infrared emiitting diode m olded in 3mm MI32T diam eter > Th 1.02 J V S ') (0.04) 0.75(0.03)_j max. 1J u clear transparent lens. 0.5 (0.02)~~ •2.5(0.1) ABSOLUTE MAXIMUM RATINGS

Contextual Info: PRELIMINARY DATA SHEET |\| = C LASER DIODE NDL5728P, NDL5728P1 ELECTRON DEVICE 1 550 nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE W IT H SINGLEMODE FIBER DESCRIPTION NDL5728P and NDL5728P1 are 1 550 nm laser diode coaxial modules w ith singlemode fiber. It incorporates InGaAs m onitor

Rectifier Tubes

Abstract: television circuit diagram "Rectifier Tubes" Scans-0017342 general electric ET-T1425
Contextual Info: 1J3 ET-T1425 Page 1 1J3 3-57 DIODE TUBES FOR TV HiGH-VOLTAGE RECTIFIER APPLICATIONS DESCRIPTION AND RATING BASING DIAG RAM The 1J3 is a filamentary diode designed for use in television receivers as the high-voltage rectifier to supply power to the anode of the television pic­

1J2H

Contextual Info: Optoisolator Specifications H11J1-H11J5 Optoisolator GaAs Infrared Emitting Diode and Light Activated Triac Driver T h e H l 1J series consists o f a gallium a rse n id e in fra re d em itting diode co upled with a light activated silicon bilateral switch, w hich functions

NEC LASER DIODE butterfly package

Contextual Info: PRELIMINARY DATA SHEET m LASER DIODE MODULE e ELECTRON DEVICE IMDL7660P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP M Q W -D FB LASER DIODE MODULE DESCRIPTION NDL7660P is a 1 310 nm 0 F 6 {Distributed Feed-Back laser diode, that has a newly developed Multi-Quantum Well MOW)

hp11612a

Abstract: HP8640B HP8565A HP436A HP83595A HSMP-3820 Microwave PIN diode HSMP-3830 HSMP-3880 HSMP-3890
Contextual Info: A Low Distortion PIN Diode Switch Using Surface Mount Devices Application Note 1049 Abstract One of the practical applications of the surface mounted PIN diode is in the design of low current, low cost RF switches. In the design of such circuits, the diode is generally treated as a current controlled

BB405B

Contextual Info: b*ìE D N AMER PHILIPS/DISCRETE • bb53^31 OQEbMll Ö74 I IAPX '' BB405B A UHF VARIABLE CAPACITANCE DIODE The BB405B is a silicon variable capacitance diode in a hermetically sealed glass envelope and intended fo r application in UHF tuners. This miniature diode can be mounted on a 2 E 5,08 mm pitch.

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P RECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5653P is a 1 550 nm phase-shifted D F6 Distributed Feed-Back laser diode B u tte rfly package module w ith optical isola­

6J66

Abstract: FP25R12W2T4 mpf271 application ntc-thermistor
Contextual Info: Technische Information / technical information FP25R12W2T4_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT4 und Emitter Controlled4 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT4 and Emitter Controlled4 Diode

Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5603P ELECTRON DEVICE 1 310 nm OPTICAL FIBER CO M M U N IC A TIO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5603P is a 1 310 nm phase*5hifted D FB D istributed Feed-Back laser diode Butterfly package m odule w ith optical isola­

LC7566

Contextual Info: DATA SHEET NEC LASER DIODE MODULE N D L5654P RECTRON DEVICE 1 550 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5654P is a 1 550 nm phase-shifted DFB Distributed Feed-Back laser diode DIP module w ith singlemode fiber. It incorpo­

diode DB 3 C

Contextual Info: PRELIMINARY DATA SHEET NEC LASER DIODE MODULE NDL5653P ELECTRON DEVICE 1 550 nm O PTICA L FIB ER COM M UN ICATION S InG aA sP PH A SE-SH IFTED D FB-D C-PBH LA SER DIODE M ODULE DESCRIPTION NDL5653P ¡s a 1550 nm phase-shifted DFB Distributed Feed-Back laser diode Butterfly package module with optical isola­

ERG75

Abstract: H150 T810 T930 EB4P
Contextual Info: ERG75 45A JS S S a fc ^ - f * - K : O u tlin e D r a w in g s FAST RECOVERY DIODE M f t - R • F e a tu re s : t — Pl aner chip • V 7 Y i)1j '<1)— Soft recovery type • Stud mounted : Applications • Switching power supplies Free-wheel diode •

d2f20

Contextual Info: mm R ectifier Diode Single Diode • O U T L IN E D IM E N S IO N S Case : 2 F Type D2FD Unit • Cathode mark 600V 1.4A I :=■ OCSI LlCVÌ coco ' \ Type No. Class 5 " cvj a % I 2.5 ^ 6.1 Date code y ;u 1j > ?> \°" j K D# # / > Standard soldering pad C0.8