HMXR-5001
Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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moc 3021 scr
Abstract: SCR moc3020 schematic moc 3041 application SCR moc3020 circuit moc 3021 zero crossing moc 3041 SCR application moc3041 application note 1Ft 6PIN MOC3040 moc 3041 application note
Text: MOC3040 MOC3041 ZERO VOLTAGE CROSSING OPTICALLY ISOLATED TRIAC DRIVER This device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral triac driver.
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MOC3040
MOC3041
moc 3021 scr
SCR moc3020 schematic
moc 3041 application
SCR moc3020 circuit
moc 3021 zero crossing
moc 3041 SCR application
moc3041 application note
1Ft 6PIN
MOC3040
moc 3041 application note
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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smd diode 27c
Abstract: marking smd NU smd diode marking sim kb MARKING SMD Diode marking 27C SMD MARKING DIODE VU smd marking nu smd diode marking NN smd marking 2x DG1M3
Text: Schottky Barrier Diode Single Diode m tm m DG1M3 o u t lin e Package : G 1 F Unu:mm Weight O.O llii Typ 30 V 1A in 3 Feature • • • • • lâiW§y=0.8mm • ß V f = 0.46 V • 1ftlR= 0.05mA i |C24 Ultra-small SMD Ultla-thin PKG=0.8mm Low Vf -0.46V
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J532-1)
smd diode 27c
marking smd NU
smd diode marking sim
kb MARKING SMD
Diode marking 27C
SMD MARKING DIODE VU
smd marking nu
smd diode marking NN
smd marking 2x
DG1M3
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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Untitled
Abstract: No abstract text available
Text: CM420855 SCR/Diode POW-R-BLOK Modules Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 55 Amperes/800 Volts Description: Powerex SCR/Diode POW-R-BLOK™ Modules are designed for use in applications requiring Half-Control and
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CM420855
Amperes/800
peres/800
MAX/10
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Untitled
Abstract: No abstract text available
Text: International IÖ R Rectifier Part Number Phase Control SCR High-Voltage . "ORM Diode Rating* ’ T AV> @ Tc (A r q (V) (V) Fax Case on Demand Outline Key Number 'ism (a) (A) (b) RQIC(DC) (K/W) (A) Notes Thyristor / High Voltage Diode Doubler Circuit Negative Control
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1RKL136-14
I42-I2
1RKL142-20
L162-08
L162-16
l25cC
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Untitled
Abstract: No abstract text available
Text: phase Control SCR International IO R Rectifier T p S .-.NN^LIlSAff I Ï J - Port Number / High-Voltage . VDRM Diode Rating* ' t AV @ tC 00 00 (À) (°C) .TS* . , . W (A) (°) (A) R Rc=JiC(DC) (K/W) Notes on* Cose Deman(| Outline Number Key Thyristor / High Voltage Diode
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IRKH250-16
125cC
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4n4001
Abstract: 4N4U 4N40 4N39 GE SCR 1000
Text: G E SOLI» STATE DÌ 3fl7S0fll DDlltflS 0 optoelectronic specification« 7 W /-Î7 ” Photon Coupled Isolator 4N39,4N40 SVM0OI Ga As Infrared Em itting Diode & Light Activated SCR A B C The GE Solid State 4N39 and 4N40 consist of a gallium arsenide, infrared emitting diode coupled with a light activated silicon con
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3fl750fll
220VAC
the4N40
4n4001
4N4U
4N40
4N39
GE SCR 1000
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode D1FJ10 Unit ‘ mm Package I 1F Weight 0.058g Typ Ä V -K v -? 1 0 0 V 1A Feature • /J ^ S M D • Ir= CD*— M — • S m all S M D 0.2mA • L o w lft=0 .2 m A Main Use • S w itc h in g R eg u la to r • D C /D C D V K -^
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D1FJ10
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A479
Abstract: r-14 a479
Text: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics
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ESAG63-004
500ns,
ESAC63-004
A479
r-14 a479
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: Ultra Low Noise Wideband Op Amp 1 Comlinear A National Semiconductor Company CLC425 APPLICATIONS: • instrumentation sense amplifiers • ultrasound pre-amps • magnetic tape & disk pre-amps • photo-diode transimpedance amplifiers • wide band active filters
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CLC425
CLC425
05nV/VHz,
05nVA/Hz
OA-15
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GM5WA06256A
Abstract: ip22m ph9080 M7S2
Text: SH ARP COMPOUND SEMICONDUCTOR SYSTEMS DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION r DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE m o d e ln o . GM5WA06256A J Specified for CUSTOMERS' APPROVAL PRESENTED . Date Date By By Aflr ~ ßé
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GM5WA06256A
dg063016
GM5WA06256A
ip22m
ph9080
M7S2
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ERE81-004
Abstract: ERE81
Text: ERE81 30A : Outline Drawings SCHOTTKY BARRIER DIODE : Features • Low forward voltage idrop(VFM) • Fast recovery time • Stud mounted i Applications • Sw itching power supplies Prevention to contrary connection • Others. Maxim um Ratings and Characteristics
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ERE81
ERE81-004
ERE81-004
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK1276A N-channel MOS-FET F-V Series 250V > Features - 0,25Q 20 A 100W > Outline Drawing Include Fast Recovery Diode High Voltage Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics - Absolute Maximum Ratings Tc=25°CV
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2SK1276A
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k302p
Abstract: No abstract text available
Text: K3020P G Series VISHAY Vishay Telefunken T Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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K3020P
11-Jan-99
k302p
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TLP596A
Abstract: 2fl marking
Text: PHOTO RELAY TLP596A TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP596A consists of a gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package. The TLP596A is a bi-directional switch which can replace mechanical
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TLP596A
TLP596A
300mA
2500Vrms
UL1577,
E67349
300mA
2fl marking
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Untitled
Abstract: No abstract text available
Text: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r^ . - 28MIN — *1.0 1 1 7.5 — ?8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications
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ERC25
28MIN
95t/R89
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MARK 11f diode
Abstract: ERC25 JT MARKING
Text: ERC25 1 .2A : Outline Drawings FAST RECOVERY DIODE r . - 28MIN — ^ *1.0 - 1 1 7.5 — ? 8MIN — * Features •R High voltage by mesa design. : M arking tf • Sf&JSte High reliability * 7 —3 - f- : W Color code : Green PMBISfc ■EISs I Applications
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ERC25
MARK 11f diode
JT MARKING
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ERE81
Abstract: ERE81-004
Text: ERE81 30A > 3 • y h + - / « ; r ^ ' f + : Outline Drawings - K SC H O TTKY B A R R IER DIODE : Features • • Low forward voltage ¡dropiVpM) Fast recovery time • Stud mounted : Applications • Switching power supplies • Prevention to contrary connection
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ERE81
ERE81-004
ERE81-004
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