DIODE 1FP Search Results

nec d 1590

Contextual Info: PRELIMINARY DATA SHEET LASER DIODE _ NDL7564P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7564P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

NDL7563P1

Abstract: Pulsed Laser 1550nm
Contextual Info: NEC / / _ PRELIMINARY DATA SHEET_ LASER DIODE NDL7563P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION DESCRIPTION NDL7563P Series are 1550nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

diode 1,5k

Abstract: diode 1fp
Contextual Info: _ PRELIMINARY DATA SHEET_ NEC / / LASER DIODE NDL7514P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7514P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diode

PW10A

Contextual Info: NEC / ' PRELIMINARY DATA SHEET_ LASER DIODE NDL7513P Series InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION DESCRIPTION NDL7513P Series are 1310nm newly developed Strained Multiple Quantum Well st-MQW structure pulsed laser diodes

1310nm otdr

Contextual Info: PRELIMINARY NEC / _ / DATA SHEET LASER DIODE MODULE NDL7513P.NDL7513P1 InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C mA V *C 'C *C Ir P 600 Pulsed Forward Current*l Vr 2.0 Reverse Voltage

thermistor 40k

Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Contextual Info: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is

A2601

Abstract: 7564P
Contextual Info: PRELIMINARY DATA S H E E T NEC / LASER DIODE MODULE / 7564P.NDL7564P1 NDL InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C IF P 600 Pulsed Forward Current*1 Vr Reverse Voltage 2.0 Tc -20 to +60

400DIA

Contextual Info: PRELIMINARY N E C / - ' DATA SHEET LASER DIODE MODULE NDL 7 5 1 4 P. NDL7 5 1 4 P1 InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION ABSOLUTE MAXIMUM RATINGS Tc=25*C I FP 600 Pulsed Forward Current11 V* 2.0 Reverse Voltage

2050I

Abstract: 1fp3
Contextual Info: Single Diode M1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl

Contextual Info: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F M1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

marking A4t sot23

Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE

Contextual Info: TOSHIBA GaAs IRED & PHOTO-TRANSISTOR TLP630 Programmable Controllers AC/DC-Input Module Telecommunication The Toshiba TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel in a six lead

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

GaAs 850 nm Infrared Emitting Diode

Abstract: LN52
Contextual Info: Panasonic Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • • • • High-power output, high-efficiency : PQ = 6 mW typ. Wide directivity, matched for external optical systems : 0 = 100 deg.

BUK657

Abstract: BUK657-500A BUK657-500B BUK657-500C T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 5SE D ^53^31 QD20710 T PowerMOS transistor Fast Recovery Diode FET BUK657-500A BUK657-500B BUK657-500C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery

diode 1fp

Abstract: TLP3520A
Contextual Info: GaAs IRED TLP3520A Q. PHOTO-TRIAC TRIAC DRIVFR Unit in mm PROGRAMMABLE CONTROLLERS AC-OIJTPIIT MODULE SOLID STATE RELAY The TOSHIBA TLP3520A consists of a photo-triac optically coupled to n gallium arsenide infrared emitting diode in a H> lead plastic DTP package.

LNJ418Q8YRU

Contextual Info: Approved Designed Checked / - v / A P P L I DEVELOPMENT SPECIFICATION TEMPORARY P/N : Amber Light Emitting Diode Indicators C A T I ON M A T E R I A L GaAsP O V Attached T L I L N J4 1 8 Q 8 Y R U N E A B S O L U T E Topr *1 1FP Tstg M A X I M U M 60 60 20

transistor 1fp

Abstract: 52ga 414n 53m diode
Contextual Info: HÌLS1S1M/S2M/53M MINI MOLD TYPE PHOTO COUPLER • OUTLINE typ. ■ GENERAL DESCRIPTION The NJL5151M series are small package dual-in-line photo couplers, which consist of high power infrared emitting diode and high sensitve Si photo transistor. IL standards (File N o.E8256I)

TLP3

Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP330 TLP330 PROGRAM MABLE CONTROLLERS A C /D C -IN P U T MODULE TELECOM M UNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared em itting diode connected inverse parallel in a six lead plastic DIP package. This is suitable for

Contextual Info: GaAs IRED & PHOTO-TRIAC TRIA C TLP3520 D R IV E R PROGRAMMABLE CONTROLLERS AC-OUTP UT MODULE S O L I D S T A T E R E LA Y The TOSHIBA TLP3520 consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 16 lead plastic DIP package.

Contextual Info: Checked Approved Designed DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN.Í 8 1 1 K 8 S R A Soft Orange Light Emitting Diode Y APPLICATION Indicatiors M A T E R I A L GaAsP O A M R U T L B S O L A X I A T I I U M N NE T E UM G S CONDITION *1 I Voltage 60 60

133ln3

Abstract: LN38GCPX
Contextual Info: s & ÉP « Approved Checked fS*\ ® ÉP ft Checked Designed W ft\/T Y P E ^^/A P P L IC A T IO N /S T R U CTURE ^ / o u t l in e D # GaP Pft i a i « 1 3 - 1 PRODUCT STANDARDS LN 3 8GCPX 'i ^ — K (G aP /G reen Light Em itting Diode(GaP) M IS Æ /In d icato rs

Contextual Info: Approved Checked Designed DEVELOPMENT SPECIFICATION TEMPORARY P / N : LN J 3 1 1 G8 P R A Y Green Light Emitting Diode A P P L I C A T I ON M A T E R I AL GaP O Attached U T L I N E Indicatiors A B S O L U T E M A X I M U M R A T I N G S *1 I FP CONDITION