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Abstract: No abstract text available
Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID100-12A3
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Untitled
Abstract: No abstract text available
Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID75-12A3
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diode 12A3
Abstract: No abstract text available
Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI145-12A3
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diode 12A3
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Untitled
Abstract: No abstract text available
Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI75-12A3
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diode 12A3
Abstract: No abstract text available
Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI100-12A3
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diode 12A3
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diode 12A3
Abstract: No abstract text available
Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID145-12A3
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diode 12A3
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diode b3
Abstract: MII 75-12 A3 resistor catalog 30-12A6 grease diode 12A3 B3-12 75-12A3 200-12A4 10-06A6
Text: IGBT Modules B3 1999 IXYS All rights reserved B3 - 1 IGBT Modules Contents Package style VCES IC VCE sat Type Page TC = 25° C TC = 25° C max. V A V 1200 35 3.0 MWI 35-12A5 B3- 4 50 3.0 MWI 50-12A5 B3- 8 75 3.0 MWI 75-12A5 B3-12 75 3.0 MII 75-12A3 MID 75-12A3
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35-12A5
50-12A5
75-12A5
B3-12
75-12A3
75-12A3
B3-16
100-12A3
diode b3
MII 75-12 A3
resistor catalog
30-12A6
grease
diode 12A3
B3-12
200-12A4
10-06A6
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MII100
Abstract: No abstract text available
Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses
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MII100-12A3
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MII100
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MII75-12A3
Abstract: No abstract text available
Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses
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MII75-12A3
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MII75-12A3
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MII145-12A3
Abstract: No abstract text available
Text: MII145-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 160 A VCE(sat) = 2.2 V Phase leg Part number MII145-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses
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MII145-12A3
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MII145-12A3
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diode 6a6
Abstract: 6A6 DIODE RJ48 BTS 132 SMD NTH069A3 rj48 to db9 smd 5b1 smd transistor 6c5 2D4 SMD DS10
Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503
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DS26503DK
DS26503DK
DS26503
DS26503
MMC2107
CY62128V
XC2S50
MAX1792
diode 6a6
6A6 DIODE
RJ48
BTS 132 SMD
NTH069A3
rj48 to db9
smd 5b1
smd transistor 6c5
2D4 SMD
DS10
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smd transistor 6c5
Abstract: 6A6 DIODE XCF01SV020C smd transistor 8a7 Transistor 6C5 5b1 smd transistor diode 6a6 C65 004 RJ48 smd 5b1
Text: DS26503DK T1/E1/J1 BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26503DK is an easy-to-use evaluation board for the DS26503 T1/E1/J1 BITS element. The DS26503DK is intended to be used as a stand-alone design kit. The board is complete with a DS26503
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DS26503DK
DS26503DK
DS26503
DS26503
MMC2107
CY62128V
XC2S50
MAX1792
smd transistor 6c5
6A6 DIODE
XCF01SV020C
smd transistor 8a7
Transistor 6C5
5b1 smd transistor
diode 6a6
C65 004
RJ48
smd 5b1
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6A6 DIODE
Abstract: RJ48 DS26504 diode 6a6 smd 5c2 12D3 C65 004 EB1100 smd 5b1 smd transistor 6c5
Text: DS26504DK T1/E1/J1/64K/8KCC BITS Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26504DK is an easy-to-use evaluation board for the DS26504 T1/E1/J1/64K/8KCC BITS element. The DS26504DK is intended to be used as a standalone design kit. The board is complete with a
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DS26504DK
T1/E1/J1/64K/8KCC
DS26504DK
DS26504
MMC2107
CY62128V
6A6 DIODE
RJ48
diode 6a6
smd 5c2
12D3
C65 004
EB1100
smd 5b1
smd transistor 6c5
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XCF01SV020
Abstract: 6A6 DIODE 12b3 diode saronix 88 xtal osc 08 6B5 diode C65 004 6c5 g 6C5 smd diode 6a6 0805 led bicolor
Text: DS26502DK T1/E1/J1/64KCC Bits Element Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26502DK is an easy-to-use evaluation board for the DS26502 T1/E1/J1/64KCC BITS element. The DS26502DK is intended to be used as a standalone design kit. The board is complete with a
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DS26502DK
T1/E1/J1/64KCC
DS26502DK
DS26502
MMC2107
CY62128V
XCF01SV020
6A6 DIODE
12b3 diode
saronix 88 xtal osc 08
6B5 diode
C65 004
6c5 g
6C5 smd
diode 6a6
0805 led bicolor
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c6073
Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP6152
RP6158
RP6159
RP6707
RP6708
RP6709
RP6710
RP6720
RP6721
RP6722
c6073
C6074
C6091
C6089
1CA033
ar9103
SIL1178
NEC C3568
c6092
U2390
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C6073
Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Text: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM
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RP1150
RP1151
RP2450
RP3510
RP3511
RP3512
RP3513
RP3514
RP3990
RP4800
C6073
SIL1178
c6074
C9013
NEC C3568
c4793
c5885
K769
C6090
15B1 zener diode
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MEC1308-NU
Abstract: ASM1442 R5538 RTL8103 32 inch TV samsung lcd Schematic slb9635 SMD DIODE AA45 data sc472 SC454 BA41-01
Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Stanford_14/15 C CPU : Chip Set :
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BA41-01119A
BA41-01120A
SHORT505
SHORT506
SHORT507
AO4435L
33-C2
41-B3
41-C4
RHU002N06
MEC1308-NU
ASM1442
R5538
RTL8103
32 inch TV samsung lcd Schematic
slb9635
SMD DIODE AA45 data
sc472
SC454
BA41-01
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7512a3
Abstract: 10012A3 200-12A4 100-12A3 550-12A4 145-12A3 75-12A3
Text: N P TIG B T Modules i • High Short Circuit SOA Capability I 1 ■ —II- I I MDI I VCES Type ■c ^CE *at Tc = 25°C A Tc = 80°C A V 37 52 73 25 38 50 80 ► Mil 100-12A3 ► MID 100-12A3 ► MDI 100-12A3 Package style Eon® typ. 125°C mJ Eoff ^thJC
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150-C
I35-12A
MWI50-12AS
MWI75-12AS
75-12A3
100-12A3
7512a3
10012A3
200-12A4
100-12A3
550-12A4
145-12A3
75-12A3
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diode 12A3
Abstract: No abstract text available
Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a combination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltagecontrolled properties of MOSFETs. Advantages to the user: • rugged, short-circuit-proof device
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-12D1
-12D1
-06P1
-12P1
-03G4
-03S4
-12A3/A4
diode 12A3
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diode 12A3
Abstract: 7512a3
Text: IGBT Modules NPT IGBT Modules NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated phase leg boost chopper buck chopper I single switch v*C 6Ç rt typ v œs V ► New A A Tc= 25°C IGBT Tc= 80°C IGBT 90 135 160
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page91-100
75-12A3
100-12A3
150-12A4
200-12A4
300-12A4
420-03S4
1000-03G4
40-06D
50-12E
diode 12A3
7512a3
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC74LCX16244AFT Low Voltage 16-Bit Bu s Buffer with 5V Tolerant Inputs and Outputs The TC74LCX16244AFT is a high performance C M O S 16-bit B U S BUFFER. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaning the C M O S
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TC74LCX16244AFT
16-Bit
TC74LCX16244AFT
G-136
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Untitled
Abstract: No abstract text available
Text: T O S H IB A TENTATIVE TC74VCX16244FT TOSHI8A CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16244FT LOW-VOLTAGE 16-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16244FT is a high performance CMOS 16bit BUS BUFFER. Designed for use in 2.5 Volt systems, it
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TC74VCX16244FT
16-BIT
TC74VCX16244FT
16bit
6244FT
TSSOP48-P-0061-0
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TC74VCXR162245FT
Abstract: No abstract text available
Text: TOSHIBA TC74VCXR162245FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 7 4 V C X R 1 6 2 2 4 5 FT LOW-VOLTAGE 16-BIT BUS TRANSCEIVER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCXR162245FT is a high performance CMOS 16-bit BUS TRANSCEIVER. Designed for use in 1.8, 2.5 or 3.3 Volt
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TC74VCXR162245FT
16-BIT
TC74VCXR162245FT
16bit
TSSOP48-P-OQ61
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P174FCT
Abstract: p174fct162 i6240
Text: f j j PER/COM PI74FCT16240T PI74FCT162240T PI74FCT162H240T Product Features: Fast CMOS 16-Bit Buffer/Line Drivers Common Features: • PI74FCT16240T, PI74FCT162240T, and PI74FCT162H240T are high-speed, low power devices with high current drive • V cc = 5 V ±10%
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PI74FCT16240T,
PI74FCT162240T,
PI74FCT162H240T
PI74FCT16240T
PI74FCT162240T
16-Bit
PI74FCT
P174FCT
p174fct162
i6240
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