Untitled
Abstract: No abstract text available
Text: RURP8120 Semiconductor 8A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <100ns JEDEC TO-220AC • Operating Temperature. +175°C • Reverse
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RURP8120
100ns
O-220AC
TA49095)
100ns)
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K8120P3
Abstract: FAIRCHILD to220ab package K8120P K-8120 Diode 1200V 8A
Text: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K8120P3
ISL9K8120P3
O-220
K8120P3
K8120P3
FAIRCHILD to220ab package
K8120P
K-8120
Diode 1200V 8A
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K8120P3
Abstract: AN-7528 K8120P ISL9K8120P3 780V TA49413
Text: ISL9K8120P3 8A, 1200V Stealth Dual Diode General Description Features The ISL9K8120P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9K8120P3
ISL9K8120P3
K8120P3
AN-7528
K8120P
780V
TA49413
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RURP8120
Abstract: No abstract text available
Text: RURP8120 Data Sheet January 2002 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP8120
RURP8120
100ns)
100ns
175oC
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rurp8120
Abstract: No abstract text available
Text: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURP8120
RURP8120
100ns)
100ns
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tc 144 e
Abstract: RURP8120
Text: RURP8120 Data Sheet January 2000 File Number 3661.3 8A, 1200V Ultrafast Diode Features The RURP8120 is an ultrafast diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial
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RURP8120
RURP8120
100ns)
100ns
tc 144 e
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RHR8120C
Abstract: RHRP8120CC TA49096
Text: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRP8120CC
RHRP8120CC
RHR8120C
TA49096
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RURP8120CC
Abstract: No abstract text available
Text: RURP8120CC Data Sheet January 2000 File Number 4792 8A, 1200V Ultrafast Dual Diode Features The RURP8120CC is an ultrafast dual diode with soft recovery characteristics trr < 100ns . It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction.
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RURP8120CC
RURP8120CC
100ns)
100ns
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RHR8120C
Abstract: RHRP8120CC TA49096
Text: RHRP8120CC Data Sheet January 2002 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RHRP8120CC
RHRP8120CC
175oC
RHR8120C
TA49096
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RHR8120C
Abstract: RHRP8120CC TA49096
Text: RHRP8120CC Data Sheet January 2000 File Number 3966.2 8A, 1200V Hyperfast Dual Diode Features Title HRP 20C The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRP8120CC
RHRP8120CC
RHR8120C
TA49096
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RHR8120C
Abstract: RHRP8120CC TA49096 RHR8120
Text: RHRP8120CC interrii J a n u a ry . Data Sheet w in File Num ber 3966.2 8A, 1200V Hyperfast Dual Diode Features The RHRP8120CC is a hyperfast dual diode with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRP8120CC
RHRP8120CC
TA49096.
O-220AB
RHR8120C
RHR8120C
TA49096
RHR8120
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Untitled
Abstract: No abstract text available
Text: STTA812D/DI/G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f a v 8A V rrm 1200V trr (typ) 50ns Vf 2.0V (max) FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. ■ VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA812D/DI/G
STTA812DI
STTA812D
STTA812G
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Hyperfast Diode 1200V
Abstract: RHRP8120 TA49096 rhrp8120 diode
Text: RHRP8120 S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <55ns JEDEC TO-220AC o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C ANODE
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RHRP8120
O-220AC
TA49096)
175oC
Hyperfast Diode 1200V
RHRP8120
TA49096
rhrp8120 diode
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TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
Abstract: STTA812D STTA812DI STTA812G STTA812G-TR DSA003605
Text: STTA812D/DI/G TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 8A VRRM 1200V trr (typ) 50ns VF (max) 2.0V K A A K K FEATURES AND BENEFITS • ■ ■ ■ ■ ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION
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STTA812D/DI/G
O-220AC
2500VRMS
TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE
STTA812D
STTA812DI
STTA812G
STTA812G-TR
DSA003605
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IR E78996
Abstract: GB25RF120K
Text: Bulletin PD - 94552 rev.A 05/03 GB25RF120K IGBT PIM MODULE VCES = 1200V Features Low VCE on Non Punch Through IGBT Technology Low Diode VF 10µs Short Circuit Capability Square RBSOA HEXFRED Antiparallel Diode with Ultrasoft Reverse Recovery Characteristics
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GB25RF120K
E78996
IR E78996
GB25RF120K
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8EWF12S
Abstract: AN-994
Text: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined
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I2203
8EWF12S
8EWF12SPbF
12-Mar-07
8EWF12S
AN-994
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Diode 1200V 8A
Abstract: ERW09-120
Text: ERW09-120 8A/1200V Fast Recovery Diode for IGBT Outline Drawings Equivalent circuit Units mm K A Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C) Item Repetitive Reverse Voltage Repetitive peak surge current Average rectiffied forward current
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ERW09-120
A/1200V)
20kHz
ERW09
Diode 1200V 8A
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Untitled
Abstract: No abstract text available
Text: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined
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I2203
8EWF12S
8EWF12SPbF
08-Mar-07
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8EWF12S
Abstract: AN-994 8EWF12SPBF
Text: Bulletin I2203 03/05 QUIETIR Series 8EWF12S SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE VF < 1.3V @ 8A Lead-Free "PbF" suffix trr = 80ns VRRM = 1200V Description/ Features The 8EWF12SPbF fast soft recovery QUIETIR rectifier series has been optimized for combined
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I2203
8EWF12S
8EWF12SPbF
8EWF12S
AN-994
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Untitled
Abstract: No abstract text available
Text: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications
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SML1200HIC-FB
O258D
O258D
MO-078AA)
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DIODE RECTIFIER BRIDGE SINGLE 1200v
Abstract: schottky diode 1200v Carbide Schottky Diode SCHOTTKY DIODE BRIDGE SML10SC12CIC-FB Diode 1200V 8A
Text: SILICON CARBIDE SCHOTTKY DIODE BRIDGE SML10SC12CIC-FB • VRRM = 1200V • IF AVG = 8A • • • • • • Full Bridge Rectifier Configuration Hermetic T258D Package with Ceramic Seals Zero Reverse Recovery Current Zero Reverse Recovery Voltage High Speed Switching
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SML10SC12CIC-FB
T258D
O258D
MO-078AA)
DIODE RECTIFIER BRIDGE SINGLE 1200v
schottky diode 1200v
Carbide Schottky Diode
SCHOTTKY DIODE BRIDGE
SML10SC12CIC-FB
Diode 1200V 8A
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"Power rectifier Diode"
Abstract: No abstract text available
Text: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications
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SML1200HIC-FB
O258D
O258D
MO-078AA)
"Power rectifier Diode"
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TA49096
Abstract: RHRP8120
Text: RHRP8120 Data Sheet January 2000 File Number 3660.2 8A, 1200V Hyperfast Diode Features The RHRP8120 is a hyperfast diodes with soft recovery characteristics trr < 55ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated
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RHRP8120
RHRP8120
TA49096
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RHRPB120
Abstract: ba 10 g 8a IPV2
Text: RHRP8120 ¡2 HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Diode April 1995 Package Features • Hyperfast with Soft Recovery. <55ns JE D EC TO -220A C • Operating Temperature. +175°C
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RHRP8120
-220A
RHRPB120
TA49096)
RHRP8120
RHRPB120
ba 10 g 8a
IPV2
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