3.2 v zener diode
Abstract: 105um DIODE ZENER X
Text: WT-Z106P-4-12 Zener Diode Chips for ESD Protection 1. Feature: 1-1 Silicon Zener diode chips for electrostatic discharge ESD protection application 1-2 This specification applies to P-Type silicon Zener diode chipDevice NO:WT-Z106P-4-12 2. Structure: 2-1 Planar type: Silicon Diode
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WT-Z106P-4-12
150mm)
05-Dec-06
3.2 v zener diode
105um
DIODE ZENER X
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keyboard and touchpad schematic
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.0, 2013-04-12 Final Power Management & Multimarket Edition 2013-04-12 Published by Infineon Technologies AG
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ESD206-B1-02V
SC79-FP
SC79-TP
AN210:
keyboard and touchpad schematic
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Untitled
Abstract: No abstract text available
Text: HVGT HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage DO-415 diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. Features
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HV37-12
300mA
HV37-12
DO-415
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Untitled
Abstract: No abstract text available
Text: HVCA HV37-12 12kV 300mA HIGH VOLTAGE DIODE Outline Drawings : mm HV37-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 4.2 o 0.8 Features
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HV37-12
300mA
HV37-12
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hvca CL03-12
Abstract: No abstract text available
Text: HVCA CL03-12 12kV 250mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features
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CL03-12
250mA
CL03-12
hvca CL03-12
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Untitled
Abstract: No abstract text available
Text: HVGT CL03-12 12kV 250mA HIGH VOLTAGE DIODE Outline Drawings : mm CL03-12 is high reliability resin molded type high voltage diode in small size package which is sealed a multilayed mesa type silicon chip by epoxy resin. Cathode Mark Lot No. o 7.0 o 1.2 Features
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CL03-12
250mA
CL03-12
DO-721
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PESD5V0S1BSF
Abstract: No abstract text available
Text: PESD5V0S1BSF Ultra low profile bidirectional low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a
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OD962
PESD5V0S1BSF
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sod962
Abstract: No abstract text available
Text: PESD5V0V1BSF Ultra low profile bidirectional very low capacitance ESD protection diode Rev. 1 — 12 November 2010 Preliminary data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge ESD protection diode in a
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OD962
sod962
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Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02 Series Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode ESD206-B1-02ELS ESD206-B1-02EL Data Sheet Revision 1.5, 2013-12-19 Final Power Management & Multimarket ESD206-B1-02 Series
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ESD206-B1-02
ESD206-B1-02ELS
ESD206-B1-02EL
TSLP-2-19,
-20-FP
TSLP-2-19:
-20-TP
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AN140
Abstract: AN210 C166 ESD3V3U1U-02LRH ESD3V3U1U-02LS IEC61000-4-4 SC74 MDDI to MIPI
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
AN140
AN210
C166
ESD3V3U1U-02LRH
ESD3V3U1U-02LS
IEC61000-4-4
SC74
MDDI to MIPI
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD8V0R1B Series Bi-directional Low Capacitance TVS Diode ESD8V0R1B-02EL ESD8V0R1B-02ELS Data Sheet Revision 2.0, 2010-12-15 Final Industrial and Multi-Market Edition 2010-12-15 Published by Infineon Technologies AG
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ESD8V0R1B-02EL
ESD8V0R1B-02ELS
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aurix
Abstract: XPOSYS 726-ESD3V3U1U02LRHE6 teaklite
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
726-ESD3V3U1U02LRHE6
ESD3V3U1U-02LRH
E6327
aurix
XPOSYS
teaklite
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD3V3U1U Series Uni-directional Ultra-low Capacitance ESD / Transient Protection Diode ESD3V3U1U-02LS ESD3V3U1U-02LRH Data Sheet Revision 1.0, 2011-04-12 Final Industrial and Multi-Market Edition 2011-04-12 Published by
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ESD3V3U1U-02LS
ESD3V3U1U-02LRH
AN210:
AN140:
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ESD8V0R1B-02EL
Abstract: C166 IEC61000-4-4 SC74
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD8V0R1B Series Bi-directional Low Capacitance TVS Diode ESD8V0R1B-02EL ESD8V0R1B-02ELS Data Sheet Revision 2.0, 2010-12-15 Final Industrial and Multi-Market Edition 2010-12-15 Published by Infineon Technologies AG
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ESD8V0R1B-02EL
ESD8V0R1B-02ELS
ESD8V0R1B-02EL
C166
IEC61000-4-4
SC74
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skiip 613 gb
Abstract: semikron skiip 613 skiip 513 gb semikron B6U 690 930 semikron skch b2hkf Semikron B2HKF SEMISTACK IGBT semikron skiip 513 gb B2HKF semikron B6C
Text: Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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TSLP
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD5V0L1B-02V Bi-directional Low Capacitance TVS Diode ESD5V0L1B-02V Data Sheet Revision 1.0, 2010-12-16 Final Industrial and Multi-Market Edition 2010-12-16 Published by Infineon Technologies AG 81726 Munich, Germany
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ESD5V0L1B-02V
TSLP
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Untitled
Abstract: No abstract text available
Text: TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.2, 2013-12-19 Final Power Management & Multimarket ESD206-B1-02V Revision History: Rev. 1.1, 2013-11-26
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ESD206-B1-02V
C79-PO
SC79-FP
SC79-TP
AN210:
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skiip 613 gb
Abstract: semikron skiip 613 642GB120-208 B2HKF semikron skiip 513 gb semikron skch b2hkf semikron skt 140 semikron B6U 690 930 SEMISTACK IGBT Semikron SKB 15/12
Text: back zurück Section 12: SEMISTACK Thyristor, Rectifier Diode and IGBT Assemblies Summary of Types 3 SEMISTACK® Converter Assemblies using thyristors and diodes 2) Circuit 1) Page B2U Non-controllable rectifier stacks in two-pulse bridge connection. . . . . . . . . . . . . . . . . . . . . B 12 – 2
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MMAD1108
Abstract: switching diode 16 array
Text: MMAD1108 Switching Diode Array Steering Diode TVS ArrayTM SCOTTSDALE DIVISION • • • • • • • • 15 3 14 4 13 5 12 6 11 7 10 8 9 APPLI CATIONS / BENEFITS • • • • • • 8 Diode Array / protects 8 lines Molded 16-Pin SOIC Package UL 94V-0 Flammability Classification
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MMAD1108
16-Pin
RS-232
RS-422
MMAD1108
switching diode 16 array
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TT-STTB-12
Abstract: No abstract text available
Text: Extract from the online catalog TT-STTB-12 Order No.: 2858166 Spring-cage terminal block with suppressor diode as fine surge protection, nominal voltage 12 V DC, for mounting on NS 35/7.5
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TT-STTB-12
TT-2009)
TT-STTB-12
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Untitled
Abstract: No abstract text available
Text: MAD1103 Switching Diode Array Steering Diode TVS ArrayTM SCOTTSDALE DIVISION 1 14 2 13 3 12 4 11 5 10 6 9 7 8 W W W. Microsemi .COM SWITCHING AND STEERING ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN package for use in
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MAD1103
14-PIN
MSC0911
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Untitled
Abstract: No abstract text available
Text: PESD5V0S1BLD Low capacitance bidirectional ESD protection diode Rev. 1 — 12 October 2010 Product data sheet 1. Product profile 1.1 General description Low capacitance bidirectional ElectroStatic Discharge ESD protection diode designed to protect one signal line from the damage caused by ESD and other transients.
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OD882D
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: 1051 & National ADVANCE INFORMATION Semiconductor 74F1051 12-Bit Schottky Barrier Diode Array General Description Features The 'F1051 is a 12-bit Schottky Diode array designed to suppress voltage transients and reduce noise in high speed switching circuits. The array provides high speed voltage
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74F1051
12-Bit
F1051
16-pin
74F1051SC
16-Lead
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74F1050
Abstract: 9.D8
Text: ADVANCE INFORMATION Semiconductor 1050 ß National 74F1050 12-Bit Schottky Barrier Diode Array General Description Features The ’F1050 is a 12-bit Schottky barrier diode array designed to be employed as termination on the inputs to memory bus lines or CLOCK lines. This device is designed to suppress
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74F1050
12-Bit
F1050
74F1050SC
16-Lead
D04D5-
9.D8
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