Photocathode
Abstract: intensifier XX1060 XX1210 XX1110 XX1190 cd 1191 XX1111 XX1112 XX1191
Text: Image intensifier tubes Single stage Type X X 1110 XX1111 XX 1190 X X 1191 XX 1200 XX 1201 Configuration Tetrode Tetrode Diode Diode Diode Diode Focusing method electrostatic Input face plate Fiber optics, flat 38 25 25 18 18 Glass Fiber optics Glass useful 9 in mm
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XX1110
XX1111
XX1191
Photocathode
intensifier
XX1060
XX1210
XX1190
cd 1191
XX1112
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C10V
Abstract: C25V SVC333 IN 4004 diode diode IN 4004 3662 diode
Text: Ordering number:EN935B SVC333 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features Package Dimensions • The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode
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EN935B
SVC333
SVC333
SVC333]
C10V
C25V
IN 4004 diode
diode IN 4004
3662 diode
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Untitled
Abstract: No abstract text available
Text: IUI mam I n t e r n a t io n a l R e c t if ie r IGBTs Insulated Gate Bipolar Transistors IGBT CIRCUIT D IA G R A M S See page 119 for IGBT case outlines A 92 B <i 2 à 1 o 3 without diode 3' 30 4 40- ô 2 3 with diode with diode U r i 2 with diode Single Switch Circuits
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BAP51-02
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Preliminary specification 1999 Jun 28 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP51-02
OD523
MAM405
OD523)
125004/00/02/pp6
BAP51-02
BP317
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109 DIODE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP50-02 General purpose PIN diode Product specification 2001 Apr 17 Philips Semiconductors Product specification General purpose PIN diode BAP50-02 FEATURES PINNING • Low diode capacitance PIN • Low diode forward resistance.
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M3D319
BAP50-02
OD523
MAM405
OD523)
613512/01/pp8
109 DIODE
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diode cross reference
Abstract: schottky diode cross reference MV3110 AH513 AH761 AH512 impatt diode Gunn Diode AH370 DMK-6606
Text: CROS S R E F E R E N C E LIST MA/COM R E F . TC S REF. D E S C R IP T IO N MA40401 PACKAGED SCHOTTKY DIODE DH378 MA40402 PACKAGED SCHOTTKY DIODE DH379 MA40404 PACKAGED SCHOTTKY DIODE DH383 MA40404 PACKAGED SCHOTTKY DIODE DH384 MA40404 PACKAGED SCHOTTKY DIODE
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MA40401
MA40402
MA40404
MA40405
MA40406
MA40408
diode cross reference
schottky diode cross reference
MV3110
AH513
AH761
AH512
impatt diode
Gunn Diode
AH370
DMK-6606
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PDF
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3vf4
Abstract: No abstract text available
Text: RECTRON BAV99 SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE FEATURES Silicon epitaxial planar diode Fast switching Surface mounting device "A7" Device marking .020 0.50 .070 (1.78) * Weight : apporx. 0.008g .110 (2.80) .081 (2.04) .119 (3.04)
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BAV99
OT-23
150mA
100uA
3vf4
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7001 1 310 nm FIBER OPTIC COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE DESCRIPTION NDL7001 is a 1 310 nm laser diode for fiber optic communications and has a strained Multiple Quantum Well stMQW structure and a built-in InGaAs monitor photo diode.
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NDL7001
NDL7001
b4S752S
b427525
b427525
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DIODE A6 sod110
Abstract: sod110 package SOD-110 BA792 philips zener diode SOD110 BAS216 BAS221 BAT254 Zener Diode MARK 101 SOD323
Text: Philips Semiconductors Comprehensive diode range: • Zener diodes • Schottky-barrier diode • Switching diodes • Band-switching diode SOD110 High-performance ceramic package www.semiconductors.philips.com V-packTM technology for higher power dissipation
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OD110
OD110
innovat27
SCB63
DIODE A6 sod110
sod110 package
SOD-110
BA792
philips zener diode
SOD110
BAS216
BAS221
BAT254
Zener Diode MARK 101 SOD323
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BAS21
Abstract: No abstract text available
Text: Surface Mount Switching Diode COMCHIP www.comchip.com.tw BAS21 Voltage: 250 Volts Current: 0.2Amp Feature SOT-23 High Voltage Switching Diode Surface Mount Package Ideally Suited for .119 3.0 .110 (2.8) .020 (0.5) Automatic Insertion Top View .056 (1.40)
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BAS21
OT-23
MDS0209006A
BAS21
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SMD diode sg 46
Abstract: SMD diode sg 03
Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS
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BAP50-03
SCA61
SMD diode sg 46
SMD diode sg 03
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev A1, Page 1/42 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
D-55294
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SVC333
Abstract: C25V Ne935-2 ACM 944 1096-11 c30 diode
Text: Ordering number : EN935B _ S VC 33 3 Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features The SVC333 is a small sized variable capacitance diode designed for AM electronic tuning. This diode works at high tuning voltage and has the high Q and the sufficiently high capacitance ratio and
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EN935B
SVC333
Ne935-4/4
C25V
Ne935-2
ACM 944
1096-11
c30 diode
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Untitled
Abstract: No abstract text available
Text: Laser Diodes y inar m i l pre iC-HT DUAL CW LASER DIODE DRIVER FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ APPLICATIONS ♦ Laser diode modules ♦ CW laser diode drivers ♦ Embedded laser diode controllers ♦ Safety related laser controllers
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QFN28
QFN28-5x5
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diode a62
Abstract: BAP51-03 diode smd ED 74 lm 9805
Text: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP51 -03 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Mar 30 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP51-03 PINNING FEATURES • Low diode capacitance
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BAP51
BAP51-03
diode a62
BAP51-03
diode smd ED 74
lm 9805
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L-119EGWT
Abstract: No abstract text available
Text: 2x5mm BI-COLOR INDICATOR LAMP P/N: L-119EGWT HIGH EFFICIENCY RED GREEN Features Description ;LOW POWER CONSUMPTION. The High Efficiency Red source color devices are ;I.C. COMPATIBLE. Phosphide Orange Light Emitting Diode. ;RoHS COMPLIANT. Phosphide Green Light Emitting Diode.
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L-119EGWT
DSAE4309
NOV/16/2005
L-119EGWT
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Mar 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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PDF
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Untitled
Abstract: No abstract text available
Text: ar y n i im prel iC-HT DUAL CW LASER DIODE DRIVER Rev B1, Page 1/45 FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Laser diode and LED modules ♦ CW N-/M-type laser diode drivers ♦ Embedded laser diode
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QFN28
QFN28-5x5
D-55294
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marking code k1
Abstract: BAP51-02 smd marking KM
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP51-02 General purpose PIN diode Product specification Supersedes data of 1999 Jul 01 2000 Jul 06 Philips Semiconductors Product specification General purpose PIN diode BAP51-02 FEATURES PINNING • Low diode capacitance
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M3D319
BAP51-02
OD523
MAM405
OD523)
613514/02/pp8
marking code k1
BAP51-02
smd marking KM
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PDF
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAP63-02 Silicon PIN diode Preliminary specification 2001 Feb 20 Philips Semiconductors Preliminary specification Silicon PIN diode BAP63-02 PINNING FEATURES • High speed switching for RF signals PIN • Low diode capacitance
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M3D319
BAP63-02
BAP63-02
OD523
OD523)
MAM405
125004/04/pp7
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PDF
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H20R120
Abstract: rg54 h20r120 igbt
Text: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW15N120R
IHW20N120R
H20R120
rg54
h20r120 igbt
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h20r120
Abstract: h20r120 igbt igbt h20r120 H20R ALL h20r120 1200v diode to247 igbt 500V 15A IHW15N120R PG-TO-247-3-21 rg54
Text: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • Trench and Fieldstop technology for 1200 V applications offers :
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IHW15N120R
PG-TO-247-3-21
h20r120
h20r120 igbt
igbt h20r120
H20R
ALL h20r120
1200v diode to247
igbt 500V 15A
IHW15N120R
PG-TO-247-3-21
rg54
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Untitled
Abstract: No abstract text available
Text: Soft Switching Series IHW15N120R q Reverse Conducting IGBT with monolithic body diode Features: • Powerful monolithic Body Diode with very low forward voltage • Body diode clamps negative voltages • TrenchStop and Fieldstop technology for 1200 V applications
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IHW15N120R
PG-TO-247-3-21
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smd code marking A8 diode
Abstract: smd diode A8 smd diode code a8
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D049 BAP50-03 General purpose PIN diode Product specification Supersedes data of 1999 Feb 01 1999 May 10 Philips Semiconductors Product specification General purpose PIN diode BAP50-03 FEATURES PINNING • Low diode capacitance
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M3D049
BAP50-03
OD323
MAM406
OD323)
125004/00/02/pp8
smd code marking A8 diode
smd diode A8
smd diode code a8
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