Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NDL5171P Series 1 300 nm OPTICAL FIBER COMMUNICAITONS ^100 ¿an GERMANIUM AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5171P Series is a Germanium avalanche photo diode module with multimode fiber. It is designed for detectors of long wavelength transmission systems.
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NDL5171P
GI-50/125)
NDL5171P
NDL5171P1
NDL5171P2
b427525
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ir10 diode
Abstract: LM5142 lm568 diode IR10 1M5603 IN5139 MV140 diode 718
Text: 1M-9/93 IDXDSD Series 1M1401 - 1M1412 1M6520 - 1M6525 1M5461A-1M5476A SURFACE MOUNT TUNING DIODES I electronics,. Many popular axial leaded glass packaged tuning diode types are now available in the MSI 1M Case for surface mount assemblies. The tuning diode chips, mounted on
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1M-9/93
1M1401
1M1412
1M6520
1M6525
1M5461A-1M5476A
or1M5143
1X5144
1M5145
1M5146
ir10 diode
LM5142
lm568
diode IR10
1M5603
IN5139
MV140
diode 718
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P200D
Abstract: No abstract text available
Text: SIEMENS BUP200D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D ^CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
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O-220
BUP200D
Q6704sed
P200D
P200D
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AC100
Abstract: T2525 T2525N038 T2525N238 T2525N638
Text: Features • • • • • • No external components except PIN diode Supply-voltage range: 4.5 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Enhanced immunity against ambient light disturbances Available for carrier frequencies between 30 kHz to 76 kHz; adjusted by Zener diode
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T2525
T2525
17-Oct-01
AC100
T2525N038
T2525N238
T2525N638
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP 200 D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP 200 D V'CE h 1200V 3.6A Pin 1 Pin 2 Pin 3 G C E Package
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O-220
Q67040-A4420-A2
fi23St
0235b05
0235bOS
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SDP20S120D
Abstract: C4692 SEMISOUTH sdp20s120 solar inverter SemiSouth Laboratories
Text: Silicon Carbide PRELIMINARY SDP20S120D Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature
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SDP20S120D
O-247
SDP20S120D
C4692
SEMISOUTH
sdp20s120
solar inverter
SemiSouth Laboratories
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SEMISOUTH
Abstract: SDA10S120 C-183 silicon carbide
Text: Silicon Carbide PRELIMINARY SDA10S120 Product Summary Silicon Carbide Power Schottky Diode VDC IF Qc Features: - Positive Temperature Coefficient for Ease of Paralleling - Temperature Independent Switching Behavior - 175 °C Maximum Operating Temperature - Zero Reverse Recovery Current
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SDA10S120
O-220
SEMISOUTH
SDA10S120
C-183
silicon carbide
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Untitled
Abstract: No abstract text available
Text: PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210â
E90700)
74bbfl51
000bl23
D00L124
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MCP3041
Abstract: MCP3040 MOC3040 equivalent MOC30* inductive MCP3031 MOC3031 equivalent MCP3030 ic moc3041 MCP303X MOC3041 replacement
Text: QUALITY TECHNOLOGIES VDE APPROVED ZERO-CROSSING TRIACS ZERO-CROSSING PACKAGE DIMENSIONS t 6.86 DESCRIPTION These devices are optically isolated zero-crossing triac drivers. They consist of a Gallium Arsenide infrared emitting diode optically coupled to a photosensitive
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MCP3030*
MCP3040/0Z*
MCP3031
MCP3041/1Z
MCP3032
MCP3042/2Z
E5015133k
500mA
MCP3041
MCP3040
MOC3040 equivalent
MOC30* inductive
MOC3031 equivalent
MCP3030
ic moc3041
MCP303X
MOC3041 replacement
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LFB01
Abstract: LFB01L
Text: Ordering number:EN1885C LFB01, 01L Silicon Planar Leadless Type Ultrahigh-Speed Switching Diode Features Package Dimensions • Highly reliable leadless glass sleeve structure. · Very small size. · Capable of being suface-mounted. · Forward voltage : VF max=1.2V.
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EN1885C
LFB01,
LFB01L
LFB01
LFB01
LFB01L
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AC100
Abstract: T2526 atmel 350 so8 atmel 336
Text: Features • • • • • • • No external components except PIN diode Supply-voltage range: 2.7 V to 5.5 V Automatic sensitivity adaptation AGC Automatic strong signal adaptation (ATC) Automatic supply voltage adaptation Enhanced immunity against ambient light disturbances
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T2526
T2526
13-Nov-01
AC100
atmel 350 so8
atmel 336
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transistor KJJ
Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210â
E90700)
C1256
transistor KJJ
C-1248
C1243
C1248
C1250
C2079
Phototransistor with base emitter
CI242
C1256
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PS2703-4
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE SOP MULTI OPTOCOUPLER ps270M FEATURES_ DESCRIPTION_ • PS2703-1, -2, and -4 series are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. Each is mounted in a plastic SOP Small Out
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ps270M
PS2703-1,
PS2703-2,
PS2703-4
PS2703-1
PS2703-2
PS2703-4
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DIODE 2216
Abstract: D1069N D1809N D269N D3301N D749N D849N DIODE 22-16
Text: M3 - Schaltung ~ Anschlußspannung ~ ~ 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 670 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D749N
D849N
D1069N
D1809N
DIODE 2216
D1069N
D1809N
D269N
D3301N
D749N
D849N
DIODE 22-16
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diode in 5392
Abstract: 10331 D1029N D2209N D2659N D4401N D660N D748N in 4067 diode
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D748N
D660N
D1029N
D2209N
diode in 5392
10331
D1029N
D2209N
D2659N
D4401N
D660N
D748N
in 4067 diode
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D1029N
Abstract: D2209N D2659N D4401N D748N K50 DIODE
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]
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D748N
D1029N
D2209N
D2659N
D4401N
D1029N
D2209N
D2659N
D4401N
D748N
K50 DIODE
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F5E1
Abstract: No abstract text available
Text: Emitter Specifications F5D1, F5D2, F5D3, F5E1, F5E2, F5E3 Infrared Emitter Gallium Aluminum Arsenide Infrared Emitting Diode T h e F5D and F5E Series are infrared emitting diodes. They exhibit high power output and a typical peak wavelength o f 880 nanom eters and
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D1029N
Abstract: D2209N D2659N D4401N D660N D748N 548 1334 diode
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 930 V 2200 V Kühlblöcke für Luftselbstkühlung - Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D [°C] [A] [W]
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D748N
D660N
D1029N
D2209N
Thyri50
D1029N
D2209N
D2659N
D4401N
D660N
D748N
548 1334 diode
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TA 3600
Abstract: T1929N T380N T869N
Text: M1C - Schaltung ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VDRM/RRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode
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T380N
T869N
T1929N
TA 3600
T1929N
T380N
T869N
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3127
Abstract: k50 transistor D1029N D2209N D2659N D4401N D748N
Text: ~ ~ ~ B6 - Schaltung Anschlußspannung 690 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 903 V 2200 V Kühlblöcke für Wasserkühlung - Wasser men. vL pro KB Temp. tA Satzstrom Id Verlustl. P d Schaltung Diode D [°C] [A] [W]
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D748N
D1029N
D2209N
D2659N
D4401N
3127
k50 transistor
D1029N
D2209N
D2659N
D4401N
D748N
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MCT210
Abstract: diode sy 400 8
Text: [ ì l i PHOTOTRANSISTOR OPTOCOUPLER OPTOELECTRONICS MCT210 PACKAGE DIMENSIONS DESCRIPTION The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared em itting diode. The MCT210 has a specified m inim um CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210--
E90700)
C12S0
diode sy 400 8
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NEC TTE
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NDL7670P 1 310 nm OPTICAL CATV/ANALOG APPLICATIONS InGaAsP MQW-DFB LASER DIODE MODULE DESCRIPTION NDL7670P is a 1 310 nm DFB D is trib u te d Feed-Back laser d io d e, th a t has a n e w ly d e v e lo p e d M u ltip le Q u a n tu m W e ll (M QW ) stru c tu re , B u tte rfly package m o d u le w ith o p tic a l is o la to r. It is e s p e cia lly desig ne d
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NDL7670P
NDL7670P
NEC TTE
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Untitled
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • • High Voltage : V c b o = 1700V High Speed Switching : Inductive Load tf=0.3,«s (Typ.) Collector Metal is Fully Covered with Mold Resin. Built-in Damper Diode.
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75kHz
400mA,
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Untitled
Abstract: No abstract text available
Text: HIGH ISOLATION VOLTAGE SOP MULTI PHOTOCOUPLER 03'J ¡>32703-4 FEATURES_ DESCRIPTION_ • PS2703-1, -2, and -4 series are optically coupled isolators containing a GaAs light emitting diode and a NPN silicon phototransistor. Each is mounted in a plastic SOP Small Out
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PS2703-1,
PS2703-4
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