pn junction diode structure
Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode １ Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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10a 1200v diode
Abstract: 12 VOLT 10 AMP smps
Text: SML10EUZ12K Ultrafast Recovery Diode 1200 Volt, 10 Amp MECHANICAL DATA Dimensions in mm inches Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising
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SML10EUZ12K
10EUZ12K
cir602)
10a 1200v diode
12 VOLT 10 AMP smps
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SML10EUZ12K
Abstract: 50V 10A ultra fast diode
Text: SML10EUZ12K Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12K 1 2 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12K
10EUZ12K
SML10EUZ12K
50V 10A ultra fast diode
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50V 10A ultra fast diode
Abstract: SML10EUZ12D
Text: SML10EUZ12D Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp TECHNOLOGY Back of case live Cathode SML 10EUZ12D The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12D
10EUZ12D
curren56
50V 10A ultra fast diode
SML10EUZ12D
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10A 600 VOLT DIODE
Abstract: SML10EUZ12SC
Text: SML10EUZ12SC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12SC The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12SC
10EUZ12SC
voltage106)
10A 600 VOLT DIODE
SML10EUZ12SC
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600v 10A ultra fast recovery diode
Abstract: ULTRAFAST 10A 600V SML10EUZ12SC 50V 10A ultra fast diode fast recovery diode 1a 1200v
Text: SML10EUZ12SC SEME LAB D3 PAK Package Enhanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML SML 10SUZ12D 10EUZ12SC The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising
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SML10EUZ12SC
10SUZ12D
10EUZ12SC
600v 10A ultra fast recovery diode
ULTRAFAST 10A 600V
SML10EUZ12SC
50V 10A ultra fast diode
fast recovery diode 1a 1200v
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600v 10A ultra fast recovery diode
Abstract: SML10EUZ12D 10EUZ12D
Text: SML10EUZ12D SEME LAB TO-220 Package Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising SML 10EUZ12D 1- Cathode 2- Anode
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SML10EUZ12D
O-220
10EUZ12D
600v 10A ultra fast recovery diode
SML10EUZ12D
10EUZ12D
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NTHD4P02F
Abstract: NTHD4P02FT1 NTHD4P02FT1G
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
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NTHD4P02F
NTHD4P02F/D
NTHD4P02F
NTHD4P02FT1
NTHD4P02FT1G
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F/D
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NTHD4P02FT1G
Abstract: marking code vishay SILICONIX SMD TSOP C3 NTHD4P02F NTHD4P02FT1
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
NTHD4P02FT1G
marking code vishay SILICONIX
SMD TSOP C3
NTHD4P02F
NTHD4P02FT1
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
NTHD4P02F/D
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NTHD4P02FT1G
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, Single P−Channel with 1.0 A Schottky Barrier Diode, ChipFET] http://onsemi.com Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F
otherwi18.
NTHD4P02FT1G
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NTHD3101FT1G
Abstract: NTHD3101F NTHD3101FT1 TL82
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −3.2 A, with 2.2A Schottky Barrier Diode, ChipFET] Features • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTHD3101F
NTHD3101F/D
NTHD3101FT1G
NTHD3101F
NTHD3101FT1
TL82
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P−Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal
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NTHD4P02F/D
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Untitled
Abstract: No abstract text available
Text: NTHD4P02F Power MOSFET and Schottky Diode −20 V, −3.0 A, Single P−Channel with 3.0 A Schottky Barrier Diode, ChipFETt Features • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP−6 Package with Similar Thermal •
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NTHD4P02F
NTHD4P02F/D
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TO247 package
Abstract: SML10EUZ12BC
Text: SML10EUZ12BC Ehanced Ultrafast Recovery Diode 1200 Volt, 2 x 10 Amp Back of Case Cathode TECHNOLOGY SML 10EUZ12BC 1 - Anode 1 The planar passivated and enhanced ultrafast recovery diode features a triple charge control action utilising Semelab’s graded Buffer Zone technology combined with
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SML10EUZ12BC
10EUZ12BC
TO247 package
SML10EUZ12BC
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diode snubber
Abstract: ULTRAFAST 10A 600V SML10EUZ12K
Text: SML10EUZ12K SEME LAB 2 D PAK Package Enhanced Ultrafast Recovery Diode 1200 Volt, 10 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 10EUZ12K diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML10EUZ12K
10EUZ12K
diode snubber
ULTRAFAST 10A 600V
SML10EUZ12K
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NTHD4N02F
Abstract: NTHD4N02FT1 NTHD4N02FT1G ChipFET
Text: NTHD4N02F Power MOSFET and Schottky Diode 20 V, 3.9 A, N−Channel, with 3.7 A Schottky Barrier Diode, ChipFETt http://onsemi.com Features • • • • • Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package with Better Thermals
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NTHD4N02F/D
NTHD4N02F
NTHD4N02FT1
NTHD4N02FT1G
ChipFET
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NTLJF3117PTAG
Abstract: NTLJF3117P NTLJF3117PT1G high current schottky diode
Text: NTLJF3117P Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http://onsemi.com Features • FETKYt Configuration with MOSFET plus Low Vf Schottky Diode • mCOOLt Package Provides Exposed Drain Pad for Excellent
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NTLJF3117P
SC-88
NTLJF3117P/D
NTLJF3117PTAG
NTLJF3117P
NTLJF3117PT1G
high current schottky diode
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NTGD4169FT1G
Abstract: diode Marking code t5 5M MARKING CODE SCHOTTKY DIODE NTGD4169F
Text: NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 Features • • • • • • Fast Switching Low Gate Change Low RDS on Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility
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NTGD4169F
NTGD4169F/D
NTGD4169FT1G
diode Marking code t5
5M MARKING CODE SCHOTTKY DIODE
NTGD4169F
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Untitled
Abstract: No abstract text available
Text: NTHD3101F Power MOSFET and Schottky Diode −20 V, Fetky, P−Channel, −4.4 A, with 4.1 A Schottky Barrier Diode, ChipFETt Features • • • • • • • http://onsemi.com Leadless SMD Package Featuring a MOSFET and Schottky Diode 40% Smaller than TSOP−6 Package
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NTDH3101F/D
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adpv
Abstract: Texas Optoelectronics kt 714 TIED87 diode as1 led and photodiode pair 2N5401 TIED88 TIED89 X10-3
Text: TEXAS OPTOELECTRONICS INC IDE 1 | 8 ^ 3 1 3 4 0000121 1 | iroi T "/ / -£ -3 TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. FEATURES DESCRIPTION These diode pairs consist of an avalanche photodiode APD) and a small reference diode
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TIED87,
TIED88,
2N5401
2N5401
O-VW-41
TIED89
adpv
Texas Optoelectronics
kt 714
TIED87
diode as1
led and photodiode pair
TIED88
TIED89
X10-3
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