DIODE 1000V 0.5A Search Results

ERA37

Contextual Info: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications

Contextual Info: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications

erA37 diode

Abstract: ERA37
Contextual Info: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications

diode 1000V 0.5a

Contextual Info: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability

ERA22

Contextual Info: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability

ERA22

Contextual Info: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability

Contextual Info: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTA05N100P IXTP05N100P RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Power MOSFET Wafer

Abstract: 2N7002E zener wafer
Contextual Info: 3VD040060NEJL 3VD040060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD040060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 1000V HBM Ø

DDG1C10

Abstract: DDG1C13 DDG1C HITACHI Hitachi DSA0047
Contextual Info: FAST RECOVERY DIODE DDG1C FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. DDG1C10 (1000V) DDG1C13 (1300V) Yellow Black Cathode band Symbol(Red) Color of cathode band

TL130

Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking

Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking

SC371-10A

Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
Contextual Info: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking

DDG1C10

Contextual Info: FAST RECOVERY DIODE DDG1C FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. DDG1C10 (1000V) DDG1C13 (1300V) Yellow Black Cathode band Symbol(Red) Color of cathode band

Contextual Info: PFRO Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 1000V IF = 1.25A trr = 100nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing

Contextual Info: PFF8, PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 800 - 1000V IF = 1.0A trr = 75nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing

IXTP05N100P

Abstract: 05n10
Contextual Info: Advance Technical Information IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-220AB Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PFF8, PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 800 - 1000V IF = 1.0A trr = 75nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing

Contextual Info: 2PFF8, 2PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 800 - 1000V IF = 3.0A trr = 75nS IR = 2µA Very low reverse recovery time Glass passivated for hermetic sealing

PF019

Contextual Info: PF8/PF0 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = IF = trr = IR = ‹ ‹ ‹ ‹ ‹ 800 & 1000V 1.8A 300nS 1µA Low reverse recovery time Glass passivated for hermetic sealing Low switching losses

Contextual Info: 2PFF8, 2PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 800 - 1000V IF = 3.0A trr = 75nS IR = 2µA Very low reverse recovery time Glass passivated for hermetic sealing

Contextual Info: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data ‹ ‹ ‹ ‹ ‹ VR = 600V - 1000V IF = 2.0A trr = 3µS IR = 1.0µA Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing

A14A

Abstract: A14F
Contextual Info: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com­ pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction