DIODE 10 25 Search Results
DIODE 10 25 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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900HM/B |
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900HM - Inverter, DTL |
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900HM/2 |
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900HM - Inverter, DTL |
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MM74C911N |
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74C911 - LED Driver, 8-Segment, CMOS, PDIP28 |
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MC1911L |
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MC1911 - NOR Gate, DTL, CDIP14 |
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MC1906F |
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MC1906 - AND Gate, DTL, CDFP14 |
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DIODE 10 25 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 10-0B166BA028SC-M989G09 target datasheet Maximum Ratings Tj=25°C, unless otherwise specified Rectifier Diode Copyright Vincotech 1 23 Mar. 2015 / Revision 1 10-0B166BA028SC-M989G09 target datasheet Brake Switch Brake Diode Brake Protection Diode Copyright Vincotech |
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10-0B166BA028SC-M989G09 | |
Contextual Info: 2500 nm Laser Diode SAR-2500-10 Description The SAR-2500-10 is a high power broad area laser diode intended for midinfrared applications including spectroscopy and solid-state laser pumping. Absolute maximum ratings Parameter Operating temperature Laser diode |
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SAR-2500-10 SAR-2500-10 SAR-2500-10, | |
VincotechContextual Info: 10-FZ07NIA060SM-P926F43 datasheet Maximum Ratings Tj=25°C, unless otherwise specified Buck Switch\ Out. Boost Switch Copyright Vincotech 1 13 Apr. 2015 / Revision 1 10-FZ07NIA060SM-P926F43 datasheet Buck Diode\ Out. Boost Diode Out. Boost Inv. Diode Module Properties |
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10-FZ07NIA060SM-P926F43 Vincotech | |
diode number
Abstract: H07V-U terminal of diode
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H07V-U) LP5/10/90 EC001419 diode number H07V-U terminal of diode | |
diode marking b2
Abstract: DHG10I1800PA DHG10 508242 10i1800 dhg10i1800 diode marking 432
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60747and 20091006a diode marking b2 DHG10I1800PA DHG10 508242 10i1800 dhg10i1800 diode marking 432 | |
IXYS DSA
Abstract: DSS10-01A DSS10-01AS
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O-220FP DSA10I100PM O-220 O-263 O-220ACFP 60747and IXYS DSA DSS10-01A DSS10-01AS | |
Contextual Info: DHG 10 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 10 A 200 ns Part number DHG 10 I 1200 PA 3 1 Backside: cathode Features / Advantages: Applications: |
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60747and 20110622a | |
DHG10
Abstract: DHG10I1800PA
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60747and 20110622a DHG10 DHG10I1800PA | |
VincotechContextual Info: 10-P012NME080SH-M910F09Y 10-F012NME080SH-M910F09 datasheet Buck switch maximum ratings Copyright Vincotech 1 05 Feb. 2015 / Revision 2 10-P012NME080SH-M910F09Y 10-F012NME080SH-M910F09 datasheet Boost switch Boost diode Buck diode Copyright Vincotech 2 05 Feb. 2015 / Revision 2 |
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10-P012NME080SH-M910F09Y 10-F012NME080SH-M910F09 Vincotech | |
Contextual Info: 2700 nm Laser Diode SAR-2700-10 Description The SAR-2700-10 is a high power broad area laser diode intended for midinfrared applications including spectroscopy and solid-state laser pumping. Absolute maximum ratings Parameter Operating temperature Laser diode |
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SAR-2700-10 SAR-2700-10 SAR-2700-10, | |
DSB10I45PM
Abstract: diode marking 74
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O-220FP DSB10I45PM O-220ACFP 60747and 20080929a DSB10I45PM diode marking 74 | |
Contextual Info: Laser Diodes 660 nm ~ 690 nm HHL Window Packaged Laser Diode BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W High Power Laser Diode Modules are manufactured by adopting specialized fibercoupling techniques, resulting in volume products with a high efficiency, stability and |
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BLD-66-10-1W-10-W BLD-68-10-1W-10-W BLD-67-10-1W-10-W BLD-69-10-1W-10-W | |
Contextual Info: [ UTZ-SC0326_1 ] 2013/10/10 Ultra Violet Laser Diode NDU7216 Features Outline Dimension • Optical Output Power: 200mW • Can Type: 5.6 Floating Mounted with Photo Diode and Zener Diode • Peak Wavelength: 375nm Unit mm ( + .03 6 5. 1. |
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UTZ-SC0326 NDU7216 200mW 375nm | |
Contextual Info: 10-PY07NIA080SM08-L095F03Y datasheet Maximum Ratings Buck Switch Copyright Vincotech 1 17 Dec. 2014 / Revision 2 10-PY07NIA080SM08-L095F03Y datasheet Maximum Ratings Buck Diode Boost Switch Boost Diode Copyright Vincotech 2 17 Dec. 2014 / Revision 2 10-PY07NIA080SM08-L095F03Y |
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10-PY07NIA080SM08-L095F03Y | |
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10 GHz pin diode
Abstract: 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE
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HSCH-9161 10Kohms; 10 GHz pin diode 60 GHz PIN diode gaas 20 GHz PIN diode PIN diode 12 GHz 60 GHz PIN diode 836 DIODE | |
RJU6052SDPD-E0Contextual Info: Preliminary Datasheet RJU6052SDPD Single Diode Ultra Fast Recovery Diode R07DS0379EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) |
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RJU6052SDPD R07DS0379EJ0100 PRSS0004ZJ-A O-252) RJU6052SDPD-E0 | |
RJU6052SDPEContextual Info: Preliminary Datasheet RJU6052SDPE Single Diode Ultra Fast Recovery Diode R07DS0380EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) |
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RJU6052SDPE R07DS0380EJ0100 PRSS0004AE-B RJU6052SDPE | |
Contextual Info: Preliminary Datasheet RJU6052SDPE Single Diode Ultra Fast Recovery Diode R07DS0380EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) |
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RJU6052SDPE R07DS0380EJ0100 PRSS0004AE-B | |
zener 1n4740
Abstract: 1N4740
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1N4740 1N4740 DO-204AL com/1n4740 zener 1n4740 | |
RJU6052SDPDContextual Info: Preliminary Datasheet RJU6052SDPD Single Diode Ultra Fast Recovery Diode R07DS0379EJ0100 Rev.1.00 Apr 26, 2011 Features • Ultra fast reverse recovery time: trr = 25 ns typ. at IF = 10 A, di/dt = −100 A/ s • Low forward voltage: VF = 2.5 V typ. (at IF = 10 A) |
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RJU6052SDPD R07DS0379EJ0100 PRSS0004ZJ-A O-252) RJU6052SDPD | |
A17110Contextual Info: MEST2G-025-10-CM32 PIN DIODE SWITCH ELEMENT CM32 non-hermetic Description Features The MEST2G-025-10-CM32 is a Thermal To Ground Series PIN Attenuator diode in an Aluminum Nitride package. This part is designed to handle up to 25 watts. Usable up to 4.0 GHz. |
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MEST2G-025-10-CM32 MEST2G-025-10-CM32 STD-J-20C A17110 | |
Contextual Info: DHG 10 I 1200 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1200 V 10 A 200 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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60747and 20110622a | |
Contextual Info: [ UTZ-SC0326_1 ] 2013/10/10 Ultra Violet Laser Diode NDU7216 Outline Dimension Features • Optical Output Power: 200mW • Can Type: φ 5.6 Floating Mounted with Photo Diode and Zener Diode • Peak Wavelength: 375nm Unit mm ( + .03 6 5. 1. 6) Φ Φ (90°) |
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UTZ-SC0326 NDU7216 200mW 375nm | |
DHG10I1800PAContextual Info: DHG 10 I 1800 PA preliminary V RRM = I FAV = t rr = Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 1800 V 10 A 300 ns Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
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60747and 20110622a DHG10I1800PA |