DIODE 066 Search Results

5SDF08F4505

Abstract: PULSE16
Contextual Info: 5SDF 08F4505 5SDF 08F4505 Old part no. DM 818-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

Contextual Info: 5SDF 08T4505 5SDF 08T4505 Old part no. DM 818C-800-45 Fast Recovery Diode Properties § Optimized recovery characteristics § Industry standard housing Applications § suited for GTO applications § Snubber diode § Freewheeling diode Key Parameters = 4 500

Contextual Info: HL8338MG ODE-208-066B Z Rev.2 Feb. 01, 2008 GaAlAs Laser Diode Description The HL8338MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.

HL8338MG

Contextual Info: HL8338MG ODE-208-066A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8338MG is 0.83 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.

1PS74SB43

Abstract: MARKING OK
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D302 1PS74SB43 Schottky barrier diode Product specification 1999 Dec 10 Philips Semiconductors Product specification Schottky barrier diode FEATURES 1PS74SB43 PINNING • Ultra fast switching speed PIN DESCRIPTION

BAP64-04W

Abstract: BP317 diode 29
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D102 BAP64-04W Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-04W PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION

BAP64-06

Abstract: BP317 sp marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BAP64-06 Silicon PIN diode Preliminary specification 1999 Dec 17 Philips Semiconductors Preliminary specification Silicon PIN diode BAP64-06 PINNING FEATURES • High voltage, current controlled PIN DESCRIPTION

FI6 diode

Abstract: DAP803 DIODE e5
Contextual Info: DAN 803, DAP 803 200mW . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter "  Diode arrays Silicon rectifiers arrays Forward Current: 0,1 A Reverse Voltage: 80 to / V Publish Data

NTE631

Abstract: NTE633
Contextual Info: NTE633 Silicon Rectifier Diode High Speed Switching Surface Mount Description: The NTE631 is a high−speed switching diode fabricated in planar technology and encapsulated in a very small rectangular ceramic SMD package. Features: D Small Ceramic SMD Package

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS200R06KE3 EconoPACK 3 mit schnellem Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

DIODE C06-15

Abstract: DIODE C06 15 DIODE C06-13
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FS300R17KE3 EconoPACK + Modul mit Trench/Feldstop IGBT³ und EmCon3 Diode EconoPACK™+ module with trench/fieldstop IGBT³ and EmCon3 diode Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

LTC4098-3.6

Abstract: 36A65 FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM200GA120DLCS 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

2NU diode

Abstract: LTC4098-3.6 DIODE C06-15
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules BSM400GA120DLC 62mm C-Serien Modul mit low loss IGBT2 und EmCon Diode 62mm C-series module with low loss IGBT2 and EmCon diode IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values

marking A3 Taiwan semiconductor

Abstract: B2 Zener Zener IT 243 REJ03G0043-0300Z a3 6 zener B1 5.6 zener B2 marking code Zener B1.66 A211-1
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0300Z Rev.3.00 Jul.28.2004 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance.

Marking J30 SOT23

Abstract: 4014C g0750
Contextual Info: M O TO R O LA O rder this docum ent by MMBD1010LT1/D SEMICONDUCTOR TECHNICAL DATA L G r e e n i n e MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenUne™ Portfolio of devices with energy-conserving traits. This switching diode has the following features:

Contextual Info: Product catalogue | Terminals | Screwing technology | SAK-series modular terminals | TS 32 | Polyamide PA 6.6 | Modular terminals with electronic components | Diode terminals General ordering data Order No. Part designation Version EAN Qty. 0663960000 DK4D

MMBD4448GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MMBD4448GP SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE .019 0.50 .040 (1.02) .035 (0.88) (1) * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH706D-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)

CH706D-40GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH706D-40GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.03 Ampere APPLICATION * General purpose detection * High speed switching SOT-23 * Silicon epitaxial planar .066 1.70 CONSTRUCTION .110 (2.80) .082 (2.10)

CH0420LSGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH0420LSGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 20 Volts CURRENT 0.4 Ampere APPLICATION * Low power rectification SOT-23 .019 0.50 .041 (1.05) .033 (0.85) * Silicon epitaxial planar .066 (1.70) CONSTRUCTION .110 (2.80)

diode B8

Abstract: 555D
Contextual Info: SK 30 DGDL 066 ET power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, chopper ,03 ! ! !< ,"03

DIODE 5A SOT-23

Contextual Info: CHENMKO ENTERPRISE CO.,LTD MMBD4448PT SURFACE MOUNT SWITCHING DIODE ARRAY VOLTAGE 80 Volts CURRENT 250 mAmpere APPLICATION * Fast high speed switching FEATURE .019 0.50 .041 (1.05) .033 (0.85) (1) * Silicon epitaxial planar MARKING .066 (1.70) CONSTRUCTION

Contextual Info: HZU-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0043-0400 Rev.4.00 Oct.29.2007 Features • • • • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. Low leakage and low zener impedance. Wide spectrum from 5.2 V through 14.3 V of zener voltage provide flexible application.