DIODE 032 Search Results

Contextual Info: SONY SLD323V High Power Density 1 W Laser Diode Description Package Outline_ Unit : mm The S L 0323V is a high power, gain-guided laser diode it r ir « A t a produced by MOCVD method*'. Compared to the SLD300 Series, this laser diode has a high brightness

diode BY 028

Abstract: 631 DIODE SMD SMD Diode 631 SMD Switching diode SOD323 DIODE 33 25 SWITCHING DIODE ny smd transistor SOD-123 CMOD2004 BY 225 diode
Contextual Info: New Product Announcement Sample Devices Reduce your board space requirements with available Ultramini upon request. TM SOD-523 Actual Size Available technologies include: Switching Diode Schottky Diode High Voltage Switching Diode Ultra Low Leakage Switching Diode

laser transmitter circuit diagram

Abstract: Laser Diode 10 pin 1300 laser diode rise time 780nm laser diode module laser diode 2 Wavelength Laser Diode 6 pin laser diode 780nm laser diode 8 mW 780NM Laser-Diode apc be 500 ups
Contextual Info: 19-0323; Rev 2; 8/95 Single +5V, Fully Integrated, 1.2Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel 622Mbps SDH/SONET _Features ♦ Rise Times Less than 250ps

laser driver TTL circuits

Abstract: 4023N 6 pin laser diode automatic laser power control MAX3261 MAX3261CCJ MAX3261ECJ 4015N MAX3261-FG07
Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver _Applications Laser Diode Transmitters 531Mbps and 1062Mbps Fibre Channel _Features ♦ Rise Times Less than 250ps ♦ Differential PECL Inputs

str 6707

Abstract: BP317 Diode smd code 805 SMD 2211 smd schottky diode marking 72 BAT254
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 dbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD110 very small ceramic

n004

Abstract: MIB57T-K ML303
Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 DESCRIPTION " 0 . 196 MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.

MIB57T-K

Abstract: ML303
Contextual Info: MEB57T-K INFRARED EMITTING DIODE 04.98 ’ 0.196 DESCRIPTION MIB57T-K is a GaAlAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303. 6.7

MIB57T-K

Abstract: ML303
Contextual Info: CRO MEB57T-K INFRARED EMITTING DIODE 04.98 ' 0.196 DESCRIPTION MIB57T-K is a GaAIAs infrared emitting diode molded in clear plastic 5mm diameter package. With the lensing effect of the package. MIB57T-K is spectrally matched to the PIN photo diode ML303.

MAX3261

Abstract: MAX3261CCJ MAX3261ECJ
Contextual Info: 19-0323; Rev 5; 5/01 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver The MAX3261 is a complete, easy-to-program, single +5V-powered, 1.25Gbps laser diode driver with complementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs

MAX3261

Abstract: MAX3261CCJ MAX3261ECJ 4023N
Contextual Info: 19-0323; Rev 5; 5/01 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver The MAX3261 is a complete, easy-to-program, single +5V-powered, 1.25Gbps laser diode driver with complementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs

step recovery diode

Abstract: 5082-0320 "Step Recovery Diode"
Contextual Info: 5082-0320 SILICON STEP RECOVERY DIODE DESCRIPTION: The ASI 5082-0320 is a Silicon Step Recovery Diode Designed as a X 8 Frequency Multiplier with X-Band Output Frequencies. FEATURES INCLUDE: PACKAGE STYLE 42 • Replacement for HP 5082-0320 • POUT = 400 mW min. @ 10 GHz X 5

Contextual Info: 19-0323; Rev 4; 8/97 Single +5V, Fully Integrated, 1.25Gbps Laser Diode Driver Description The MAX3261 is a com plete, easy-to-program , single +5V-pow ered, 1.25G bps laser diode driver with com ­ plementary enable inputs and automatic power control APC . The MAX3261 accepts differential PECL inputs

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN Description The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin

sr05

Abstract: TO253 SOT143 E1 SR0502CTG marking 003 sot143
Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin

TO253

Abstract: 503B SOT143
Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SR05 Series SR05 Series 5V 25A Diode Array RoHS Pb GREEN Description The SR05 consists of four, low capacitance steering diodes and a low voltage TVS diode that provide protection against ESD and lightning surge events. Each channel or I/O pin

"Infrared LED"

Abstract: infrared receiver diode led HIR4254C lens photodiode phototransistor 850nm 5mm LED
Contextual Info: EVERLIGHT ELECTRONICS CO., LTD. DEVICE NUMBER : ECN : DIH-425-032 REV : PAGE : 1.0 1/8 5mm Infrared LED MODEL NO : HIR4254C
Features :
High radiant intensity
Peak wavelength p=850nm
View angle 60
High reliability
Description :
EVERLIGHT’s Infrared Emitting Diode HIR4254C is a high intensity diode, molded in a

4245

Abstract: SMD M1B BAT56 SMD M1B diode
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT56 Schottky barrier diode Preliminary specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Preliminary specification Schottky barrier diode FEATURES • Low leakage current

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

SOD-110

Abstract: BAT254 smd schottky diode marking 72 Diode smd code 805 MCC SMD DIODE SMD MARKING 541 DIODE str f 6707 MAR 733
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET L4 handbook, halfpage M3D177 BAT254 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification Schottky barrier diode BAT254 FEATURES DESCRIPTION

smd diode 708

Abstract: SMD M1B diode M1B Diode smd CD 4938 Silicon Schottky Diode sod123 SMD M1B str 541 BAT93 SCD24 ir 7811
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BAT93 Schottky barrier diode Product specification File under Discrete Semiconductors, SC01 Philips Semiconductors December 1993 Philips Semiconductors Product specification Schottky barrier diode FEATURES • Ultra-fast switching speed

DIODE A6 sod110

Abstract: bas216
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET A6 andbook, halfpage M3D179 BAS216 High-speed switching diode Product specification Supersedes data of April 1995 1996 Apr 03 Philips Semiconductors Product specification High-speed switching diode BAS216 FEATURES APPLICATIONS

Contextual Info: CRO MI32T-L INFRARED EMITTING DIODE DESCRIPTION MI32T-L is GaAlAs infrared emiitting diode molded in 3mm diameter clear transparent lens. ABSOLUTE MAXIMUM RATINGS Forward Current Continuous Pulse Forward Current Reverse Voltage (Continuous) Power Dissipation

smd schottky diode marking 72

Abstract: smd schottky diode 82 BAT74S MRC129 smd diode 777
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET halfpage MBD128 BAT74S Schottky barrier double diode Product specification Supersedes data of 1997 Nov 07 File under Discrete Semiconductors, SC01 1998 Feb 06 Philips Semiconductors Product specification Schottky barrier double diode

Contextual Info: RClamp0508M RailClamp Low Capacitance TVS Diode Array PROTECTION PRODUCTS - RailClamp Description Features RailClamps are surge rated diode arrays designed to protect high speed data interfaces. The RClamp series has been specifically designed to protect sensitive