DIODE 0 DB Search Results

Contextual Info: ESAlpha Low Inductance Shunt PIN Diode SMP1322-017 Features 9OT-143 • High Isolation Switching Diode >20 dB at 900 MHz 0 .0 7 9 I - “ 1 2 m m r - E_ ■ Low Insertion Loss 0 .0 7 5 71 <1 -8 r (1 .9 171171^ ■ Standard SOT-143 Package (1.2 mm) I

Contextual Info: SONY C O R P / C O M P O N E N T PR O D S A3fl2303 0 0 0 2 ^ 1 0 S MTE D SLD201U-3/V-3 SONY. 50mW High Power Laser Diode r - h i - 5 - Description SLD201 U -3/V-3 is a gain-guided highpow er laser diode fabricated by MOCVD. Features . Low noise S /N = 8 0 dB Typ. at 5 mW.

Contextual Info: bEE D b4E7S2S DÜ37SM7 111 « N E C E N E C ELECTRONICS INC LASER DIODE N D L 5 6 0 0 1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP PHASE-SHIFTED DFB DC PBH LASER DIODE DESCRIPTION N D L 5 6 0 0 is a 1 310 nm D F B D istributed Feed-back laser diode especially designed fo r long distance high capacity transm is­

FAH DIODE

Abstract: FAH diode 28
Contextual Info: 3GE D N EC J • b427525 ‘0051240 1 ■ ELECTRONICS INC T^-O? LASER DIODE N D L5 0 0 9 1 3 1 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DOUBLE HETEROSTRUCTURE LASER DIODE DESCRIPTIO N N D L5009 is a long wavelength laser diode especially designed for longdistance high capacity transmission systems. The

laser diode chip

Abstract: nec 2222 NDL5850D DIODE CHIP
Contextual Info: N E C ELECTRONI CS I NC fc.EE D • b4 5 7 S2 S 0 0 3 0 0 4 3 b5b H N E C E DATA SHEET NEC LASER DIODE NDL5850D ELECTRON DEVICE 1 550 nm OPTICAL FIBER CO M M UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE FOR 2 .4 Gb/s DESCRIPTION NDL5850D is 1550 nm DFB Distributed Feed-back laser diode chip on carrier with ribbon lead. This device is designed

laser printer high voltage diagram

Contextual Info: _ SLD201U/V SONY. 20mW High Power Laser Diode Description Package Outline SLD201 U /V is a gain-guided high-pow er U n it: mm SLD201U laser diode fabricated by MOCVD. Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero laser diode.

MI407

Abstract: HIGH POWER ANTENNA SWITCH PIN DIODE bpf 200mhz 100MHZ High Power Antenna Switch OC53 cd diode
Contextual Info: bSMSÔSS 0 0 1 7 7 M1 bTE • ANTENNA SWITCH M I4 0 7 PIN DIODE RF POW ER SWITCHING DESCRIPTION The MI407 PIN diode is employing a high reliability glass construction, designed for solid state antenna switches in commercial two-way radios. FEA TU RES • •

DL5060

Abstract: DL7500
Contextual Info: DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE N D L 75 0 0 P 1 310 nm InGaAsP MQW-DC-PBH PULSED LASER DIODE 14 PIN DIP MODULE WITH SINGLEMODE FIBER DESCRIPTION N DL7500P ¡5 a 1 310 nm pulsed laser diode, that has a newly developed M ulti-Quantum Well MQW structure, DIP module

Contextual Info: FEATURES è • 4 0 0 -2 0 0 0 MHz ■ 0.9 dB Insertion Loss ■ 60 dB Isolation MODEL NO. DS0551 PIN Diode SPST ■ TTL Driver SPST ■ Non-Reflective ■ .750 Sq. Flat Pack CONTROL .X X ^ - .0 0 2 SC CD * CO > ü + 5V = .02 .x x x s .010 </> ~ GUARANTEED PERFORMANCE

Contextual Info: METELICS CORP Î H E T -0 7 -0 7 0 I fc.051352 □ GOGG'H 5 | MSS-40,000 Series Medium Barrier Schottky Diode metelics CORPORATION Features Applications • Low Rs — 5fi • Low NF • Mixers: single diode, image reject, image enhancement, ring quad • Broad optimum L.O. power range

MARK A0X

Abstract: SLD20 SLD202U-3 SLD202V-3
Contextual Info: SLD202U-3/V-3 SONY, 50mW High Power Laser Diode Description U n it: mm Package O utline S LD 202U -3/V -3 is a gain-guided highpow er laser diode fabricated by MOCVD. Features . Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero laser diode.

DS0551

Contextual Info: FEATURES & • 4 0 0 -2 0 0 0 MHz ■ 0.9 dB Insertion Loss ■ 60 dB Isolation MODEL NO. DS0551 PIN Diode SPST ■ TTL Driver ■ Non-Reflective ■ .750 Sq. Flat Pack C ONTROL GND - 5V + 5V ■X X = . 0 2 .X X X = . 0 1 0 CD cc S v> > o O _i 2 .8 - 3 .6 "

Contextual Info: A L L E GR O MICROSYSTEMS INC TB » • 0 S Q M3 3 Ô 0 0 D 3 7 ÖE S *ALGR T -91-01 PROCESS DBA Process DBA Dual Diode with Common Cathode Process D B A is an epitaxial silicon dual diode with a com m on catho de term inal. It has a typical break­ down rating of 8 5 V and will o p erate with forward

9315b

Abstract: SLD201V SLD201V3
Contextual Info: SLD201U-3/V-3 SONY« 50mW High Power Laser Diode Package Outline Description SLD201 U -3/V-3 is a gain-guided highpower laser diode fabricated by MOCVD. U nit: mm SLD201U-3 Features • Low noise S /N = 8 0 dB Typ. at 5 mW. Structure GaAIAs double-hetero visible laser diode.

CDS0669

Contextual Info: F E AT U R E S MODEL NO. CDS0669 1 0 0 - 20 0 0 MHz 80 dB Isolation 1 dB Insertion Loss TTL BCD Control Non-Reflective Replaceable SMA Connectors SP3T PART IDENTIFICATION .10 1.550 "0" E1 .025±.002 DIA 6 PLACES .25 .10 PIN Diode SP 3 T "0" E2 GND J3 GND GND

CD laser pickup assembly

Abstract: laser diode symbol schematic ir3c09 DVD pickup assembly DVD laser pickup assembly DVD optical pick-up assembly schematic diagram tv sharp IR3C08 RVK POWER FACTOR CONTROLLER 780nm 500mW Laser Diode for dvd
Contextual Info: Numbering System • New Numbering System of Laser Diodes GH 0 65 07 A 2 A Semiconductor laser diode Category 0 : Laser diode, 1 : Frame laser, 2 : Dual wavelength laser Wavelength (63 : 635nm band, 65 : 650nm band, 78 : 780nm band etc.) Optical power output

Contextual Info: PRELIMINARY DATA SHEET NEC ELECTRON DEVICE LASER DIODE MODULE ND L5603P 1 3 1 0 nm O PTICAL FIBER CO M M U NICATIO NS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE MODULE DESCRIPTION NDL5603P is a 1 3 1 0 nm phase-shifted D F 6 Distributed Feed-Back laser diode Butterfly package module with optical isola­

Contextual Info: DATA SHEET PHOTO DIODE NDL5481P Series 1 300 nm OPTICAL ANALOG CATV SYSTEM 080 /¿m InGaAs PIN PHOTO DIODE MODULE WITH SMF DESCRIPTION N D L5481P Series are InGaAs PIN photo diode modules with singlemode fiber. They are designed for analog transmission systems like CATV applications, and feature low intermodulation distortion and 4 0 dB minimum of

Contextual Info: ULTRA-BROADBAND DROP-IN REMOVABLE CONNECTORS REFLECTIVE SP4T DIODE SWITCH MODEL SWM-14 0 0 0.5-18.0 GHz GENERAL INFORMATION The Model S W M -1 400 S P 4 T PIN Diode switch operates over the full fre­ quency range 0.5-18-0 G H z in a single unit. KDI/Triangle has integrated

Contextual Info: FEATURES MODEL NO. DSW89048 • 2 0 0 -2 0 0 0 MHz ■ 70 dB Isolation @ 1000 MHz & ■ 1.7 dB Insertion Loss @ 1000 MHz PIN Diode SP8T ■ TTL Driver ■ Non-Reflective ■ SMA Connectors J8 I 0.43TYP COMMON J9 0.22 0.45 TY P 4.00 ±0.3 .08- — 3.836 - QOQQQ0O□

Contextual Info: FEATURES MODEL NO. DS0551 • 4 0 0 -2 0 0 0 MHz ■ 0.9 dB Insertion Loss ■ 60 dB Isolation PIN Diode SPST ■ TTL Driver ■ Non-Reflective ■ .750 Sq. Flat Pack CONTROL GND h 5V - 5V - O GND .X X ■— .062 c s > = .02 = .010 x> TYPICAL PERFORMANCE

swg copper wire 25 32

Abstract: Scans-001779 CV2341 R644 noise diode marconi company marconi
Contextual Info: C O A X IA L NO ISE DIODE CV2341 T U N G ST EN FILAMENT ISSUE 2 A coaxial noise diode of 7 0 0 characteristic impedance suitable for use at frequencies up to 2500Mc/s with correction as specified and at currents up to 200 mA. FILA M EN T *Vf range 0 —4-7

Contextual Info: b2E D • bM27SES 0037»n 0 ID^ WNECE_ N E C ELECTRONICS INC SER DIODE MODULE / N D L 5 7 0 7 P 1 3 0 0 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH LASER DIODE MODULE D E SC RIPTIO N N D L5707P is a 1 300 nm laser diode DIP m odule w ith m u ltim o d e fib e r and internal therm o-electric cooler. It is designed fo r a

Contextual Info: FEATURES MODEL NO. CDS0912 • 2 0 - 4 0 0 0 MHz ■ < 1 dB Insertion Loss up to 3 GHz & ■ TTL Driver PIN Diode SP2T ■ Non-Reflective ■ Replaceable SMA Connectors J1 ♦5V Œ » > « 5. j S ~ o0 TYPICAL PERFORMANCE CONT .p „ PARAMETER OKXATING FREQUENCY