DIOD 800A Search Results
DIOD 800A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CUZ30V |
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Zener Diode, 30 V, USC |
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CUZ24V |
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Zener Diode, 24 V, USC |
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CUZ36V |
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Zener Diode, 36 V, USC |
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CUZ20V |
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Zener Diode, 20 V, USC |
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CEZ6V8 |
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Zener Diode, 6.8 V, ESC |
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DIOD 800A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SD51
Abstract: UNITRODE schottky 400MS
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OCR Scan |
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3R5SContextual Info: FUJI ;± m « i Fuji New Semiconductor Products 1800V/800A/1 ± * § S IG B T iy n .- A ' 1 M B I 8 0 0 P N MB - 1 8 0 IGBT Low loss • high speed switching IGBT Modules H 4^ JH Features * ¡ ¡¡REEv High voltage, high current • 7 ^ High speed sw itching |
OCR Scan |
800V/800A/1 3R5S | |
igbt 400A, 1200V mitsubishiContextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: M itsubishi IGBT M odules are designed fo r use in sw itching applications. Each m odule consists of one IGBT in a single co nfig ura tion w ith a reverse-connected super-fast recovery free-w heel diode. |
OCR Scan |
CM400HA-24H igbt 400A, 1200V mitsubishi | |
Contextual Info: MITSUBISHI IGBT MODULES CM400HA-24H HIGH POWER SWITCHING USE INSULATED TYPE Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura tion with a reverse-connected su per-fast recovery free-wheel diode. |
OCR Scan |
CM400HA-24H | |
diod m4
Abstract: diode LT 42
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OCR Scan |
CM400HA-28H -800A diod m4 diode LT 42 | |
irf 792
Abstract: GA400TD25S
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Original |
GA400TD25S 10kHz irf 792 GA400TD25S | |
diod t4
Abstract: p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A
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Original |
-50051D GA400TD25S 10kHz diod t4 p j 85 diod GA400TD25S t4 diod INT-A-PAK Dual weight diod 800A | |
GA400TD25SContextual Info: PD -50051C GA400TD25S "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses |
Original |
-50051C GA400TD25S 10kHz Colle52-7105 GA400TD25S | |
Contextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses |
Original |
-50051D GA400TD25S 10kHz 85ded 08-Mar-07 | |
GA400TD25SContextual Info: PD -50051D GA400TD25S "HALF-BRIDGE" IGBT DUAL INT-A-PAK Standard Speed IGBT Features VCES = 250V • Generation 4 IGBT technology • Standard: Optimized for minimum saturation voltage and operating frequencies up to 10kHz • Very low conduction and switching losses |
Original |
-50051D GA400TD25S 10kHz 12-Mar-07 GA400TD25S | |
bu2527af
Abstract: wk16412 WK16413 WK16414 Tesla katalog VQE24 VQE14 4DR823B kr206 5DR801B
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roku1984/85, VQB200 VQB201 VQC10 VQE11 VQE12 VQE13 VQE14 VQE21 VQE22 bu2527af wk16412 WK16413 WK16414 Tesla katalog VQE24 4DR823B kr206 5DR801B | |
thyristor TAG 8506
Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
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OCR Scan |
11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 |