DIN 82-RAA 0.8 Search Results

CYL008M162FFBU-1ABAI

Abstract: M2A2
Contextual Info: PRELIMINARY CYL008M162FFB 128-Mbit 8-Mbit x 16 Low-Power MoBL4 SDRAM Features — Deep Sleep Mode — Self Refresh Mode; standard and low power • Functionality • Temperature: –40°C to +85°C — Internal 4 Bank Operation • 8 mm x 8 mm x 1.0 mm 54-ball 0.8 mm FBGA Package

EM11B

Abstract: CMS6432LBW M2A2 m4a4 FMS6432
Contextual Info: C F MS6432LBx–75Ex 64M(2Mx32) Low Power SDRAM Revision 0.7 Sep. 2007 Rev. 0.7, Sep. ‘07 C(F)MS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary

Contextual Info: FMS6432LBx–75Ex 64M 2Mx32 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 FMS6432LBx–75Ex Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.09th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)

Contextual Info: CMS4A16LAx–75Ex 128M 8Mx16 Low Power SDRAM Revision 0.5 May. 2007 Rev. 0.5, May. ‘07 CMS4A16LAx–75Ex Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: CMS4A32LAx–75Ex 128M 4Mx32 Low Power SDRAM Revision 0.6 May. 2007 Rev. 0.6, May. ‘07 CMS4A32LAx–75Ex Document Title 128M(4Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

Contextual Info: FMS6432LBx–75xx 64M 2Mx32 Low Power SDRAM Revision 0.4 Aug. 2006 Rev. 0.4, Aug. ‘06 FMS6432LBx–75xx Document Title 64M(2Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Sep.13th, 2005 Preliminary 0.1 Change Part Numbering of Device Version (AÆB)

Contextual Info: CMS4S32LAx–75xx 256M 8Mx32 Low Power SDRAM 2 pcs of 128Mb components Revision 0.3 Dec. 2006 Rev. 0.3, Dec. CMS4S32LAx–75xx Document Title 256M(8Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft

CBB Capacitor Selection Guide

Contextual Info: CMS4A16LAx–75xx 128M 8Mx16 Low Power SDRAM Revision 0.4 Nov. 2006 Rev. 0.4, Nov. ‘06 CMS4A16LAx–75xx Document Title 128M(8Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark Preliminary 0.0 Initial Draft Apr.25th, 2005 0.1

transistor A7

Abstract: CMS3232LAF CMS3232LAG CMS3232LAH
Contextual Info: CMS3232LAx-75xx 32M 1Mx32 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3232LAx-75xx Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Feb. 18th, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

CMS6416LAF

Abstract: CMS6416LAG CMS6416LAH CMS6432LBH
Contextual Info: CMS6416LAx-15Ex 64M 4Mx16 Low Power SDRAM Revision 1.3 November, 2005 Rev1.3, Nov. 2005 CMS6416LAx-15Ex Document Title 64M(4Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Jun.25th, 2004 Preliminary 0.1 Correct typo.

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75xx 32M 2Mx16 Low Power SDRAM Revision 0.2 January, 2007 Rev0.2, Jan. 2007 CMS3216LAx-75xx Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH
Contextual Info: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.1 November, 2005 Rev0.1, Nov. 2005 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

Contextual Info: CMS3232LAx-75Ex 32M 1Mx32 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3232LAx-75Ex Document Title 32M(1Mx32) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar. 3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

CMS3216LAF

Abstract: CMS3216LAG CMS3216LAH EM11B
Contextual Info: CMS3216LAx-75Ex 32M 2Mx16 Low Power SDRAM Revision 0.2 August, 2006 Rev0.2, Aug. 2006 CMS3216LAx-75Ex Document Title 32M(2Mx16) Low Power SDRAM Revision History Revision No. History Draft date Remark 0.0 Initial Draft Mar.3rd, 2005 Preliminary 0.1 Add H(Pb-Free & Halogen Free) descriptions

MCP 67 MV- A2

Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
Contextual Info: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1

SAMSUNG MCP

Abstract: 1g nand mcp KBE00S003M-D411 KBE00S003M Flash MCp nand DRAM 107-ball MCP NOR FLASH SDRAM samsung "nor flash" sensing MCP MEMORY UtRAM Density MCP 1Gb nand 512mb dram 130
Contextual Info: KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

MCP 1Gb nand 512mb dram 130

Abstract: SAMSUNG MCP MCP 67 MV- A2 137FBGA KBE00S009M KBE00S009M-D411 UtRAM Density
Contextual Info: KBE00S009M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

SAMSUNG MCP

Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Contextual Info: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6

NAND FLASH DDP

Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
Contextual Info: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

S73WS256N

Abstract: din 82 RGV
Contextual Info: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION

kbe00f003m

Abstract: SAMSUNG MCP Flash MCp nand DRAM 107-ball NAND FLASH DDP samsung mcp 107-ball d411 KBE00G003M-D411 NNDD512512256256BBFF UtRAM Density MCP 1Gb 512Mb 130
Contextual Info: KBE00G003M-D411 MCP MEMORY NNDD512512256256BBFF NAND 512Mb*2 + Mobile SDRAM 256Mb*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

TCMS

Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
Contextual Info: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications

TCMS

Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
Contextual Info: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION

17xx 3-lead

Abstract: AT49LD3200 2232E
Contextual Info: Features • 3.0V to 3.6V Read/Write • Burst Read Performance • • • • • • • • • • – <100 MHz RAS Latency = 2, CAS Latency = 6 , 10 ns Cycle Time tSAC = 7 ns – <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns