SMD BOOK
Abstract: smd 842 SMD Packages TQFP Package 44 lead 20B40 P-MQFP-44-2 P-MQFP-144-1 SMD Devices smd transistor marking 26 MARKING BOOK
Text: Package Outlines Plastic Package, P-DIP-40 Plastic Dual In-Line Package 20B40 DIN 41870 T10 Plastic Package, P-LCC-28-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-44-1 (Plastic Leaded Chip Carrier) – SMD Plastic Package, P-LCC-68 (Plastic Leaded Chip Carrier) – SMD
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P-DIP-40
20B40
P-LCC-28-1
P-LCC-44-1
P-LCC-68
P-LCC-84-2
P-MQFP-44-2
P-MQFP-44-4
P-MQFP-80
P-MQFP-100-2
SMD BOOK
smd 842
SMD Packages
TQFP Package 44 lead
P-MQFP-44-2
P-MQFP-144-1
SMD Devices
smd transistor marking 26
MARKING BOOK
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PDF
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flux F-SW32
Abstract: C42315-A1353-A3 PBTp-GF30 C42315-A60-A2 smd diode code Bek siemens spc2 C42315-A60-A3 SPC266 smd a68 F2955
Text: Schalter und Tasten Switches and Pushbuttons Datenbuch Data Book Contents Typenübersicht Qualitätssicherungssystem Begriffsbestimmungen und Erläuterungen Verarbeitungshinweise Summary of available types Quality assurance System Definitions and remarks Notes on processing
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A1345
A1341,
A3000
A1353
A1347
LBB126
STB11,
STB21
SPC266,
SPC758,
flux F-SW32
C42315-A1353-A3
PBTp-GF30
C42315-A60-A2
smd diode code Bek
siemens spc2
C42315-A60-A3
SPC266
smd a68
F2955
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PDF
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E7800
Abstract: GET06625 Q62703-Q1090
Text: 2.7 Chip position ø4.3 ø4.1 14.5 12.5 1 1.1 .9 2.54 mm spacing ø0.45 SFH 483 1 0.9 .1 GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter ø5.5 ø5.2 3.6 3.0 GET06625 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) fet06625 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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GET06625
fet06625
OHR00881
OHR00948
OHR01457
E7800
GET06625
Q62703-Q1090
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PDF
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Untitled
Abstract: No abstract text available
Text: Infrarot-LED mit hoher Ausgangsleistung High Power Infrared LED Lead Pb Free Product - RoHS Compliant SFH 4850 E7800 preliminary data / vorläufige Daten Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung • Anode galvanisch mit dem Gehäuseboden
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E7800
850nm
850nm
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PDF
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BPX osram
Abstract: E7800
Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger
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E7800
Q62703-Q4755
BPX osram
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PDF
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LME7800
Abstract: No abstract text available
Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger
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E7800
LME7800
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PDF
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E7800
Abstract: GETY6625 OHLY0598 measurement of humidity in das
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung
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E7800
E7800
GETY6625
OHLY0598
measurement of humidity in das
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PDF
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SFH483ME7800
Abstract: SFH483-M sfh483m E7800 LME7800
Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit
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E7800
E7800
Q62703Q4755
SFH483ME7800
SFH483-M
sfh483m
LME7800
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAlAs-Lumineszenzdiode GaAlAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 483 L/M E7800 Wesentliche Merkmale Features • Hergestellt im Schmelzepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit
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Original
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E7800
Anwendungen2006-12-07
E7800
Q62703Q4755
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PDF
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E7800
Abstract: GETY6625 OHLY0598
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4850 E7800 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Infrarot LED mit hoher Ausgangsleistung
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Original
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E7800
E7800
GETY6625
OHLY0598
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PDF
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Untitled
Abstract: No abstract text available
Text: SFH483 SIEMENS FEATURES • Highly efficient GaAIAs LED • Anode electrically connected to case • High pulse power • High reliability • DIN humidity category per DIN 40040 GOG • Matches BPX63, BP103, LD242, SFH464, photodetectors • Package - TO -18,18 A3 DIN 41870
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OCR Scan
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SFH483
BPX63,
BP103,
LD242,
SFH464,
TcS25
E7800"
/lE100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: SFH 216 SIEMENS SILICON PIN PHOTODIODE FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 ' (2.54 mm) O perating and Storage Tem perature Range (T0P T stg ) . - 40" 10 +80"C
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1 * (2.54 mm) Operating and Storage Temperature Range (T0P Ts tg ) -4 0 " to +80“C
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PDF
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Siemens photodiode visible light
Abstract: SFH 212 T018 T-2856
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D 0235b05 002?4b7 T • S I E G SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings * Package: 18 A3 DIN 41870 TO18 , G lass Lens, Hermetically Sealed Package, Solder Tabs, Lead Spacing 2.54 mm (1/«0
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OCR Scan
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23SbDS
00274b?
JU830
Siemens photodiode visible light
SFH 212
T018
T-2856
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PDF
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BC250A
Abstract: No abstract text available
Text: PNP TRANSISTORS ITT SEP1IC0ND/ INTERMET ALL 3ME D MbfiSTll QQQ5MM5 L, ISI 7 - 3 l - o i PN P Silico n Transistors with plastic package 10D3 according to DIN 41870 =»TO-92 . On special request, these transistors w ill also be produced with TO-18 pin configura
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BC250A
BC250B
BC250C
BC327
BC327-16
BC327-25
BC327-40
BC328
BC328-16
BC328-25
BC250A
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SFH 212 SILICON PHOTODIODE VERY LOW DARK CURRENT FEATURES Maximum Ratings • Package: 18 A3 DIN 41870 T 018 , Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 0.1* (2.54 mm) O perating and Storage Tem perature R ange (T0 p, Ts tg ) - 4 0 " to +80°C
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PDF
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BC856B TO-92
Abstract: No abstract text available
Text: I T T CORP/ I T T CHPNTS MIE II • Mt82bflM OQOiMOa 4 ■ IT O PNP TRAN SISTO RS PNP Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura tion.
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OCR Scan
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Mt82bflM
-TO-92)
O-236
BC856B TO-92
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PDF
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BC337 noise
Abstract: No abstract text available
Text: I T T CO R P / I T T CMPNTS 41E D B 4bñ2bñ4 OGGlMOl 2 • ITO - - p - 3 \ - c t O " “ NPN TRANSISTORS NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 =TO-92 . On special request, these transistors will also be produced with TO-18 pin configuration.
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O-236
BC337 noise
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PDF
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BC170C
Abstract: BC170B "bc170c"
Text: 4 68 4 9 5 5 I T T SEMICONDUCTORS_ NPN TRANSISTORS a? de| 87D 02320 ¿7 - D 2 ^/ □ □ □5 3 e d 3 f mlsmtss NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 -TO-92 . On special request, these transistors will also be produced with TO-18 pin configura
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OCR Scan
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-TO-92)
BC170C
BC170B
"bc170c"
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PDF
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em 483
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 00.45 SFH 483 Chip position I Anode LD 242, BPX63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale
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BPX63,
IQ100
450k/W
em 483
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 2.7 00.45 SFH 483 Chip position A CO 1 -; o o 3.6 ‘i 1.0 Anode LD 242, BPX 63, SFH 464 Cathode (SFH 483) Approx. weight 0.5 g IO C\J CO CO o M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified.
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OHR01457
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PDF
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em 483
Abstract: No abstract text available
Text: SIEMENS SFH 483 GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter 0 0 .4 5 2.7 r * - C h ip position 3.6 Anode LD 242, BPX 63, SFH 4 6 4 Cathode (SFH 4 8 3 ) A p p ro x. weight 0 .5 g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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OCR Scan
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4004type
OHSDI45?
em 483
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PDF
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SFH 462
Abstract: No abstract text available
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 483 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode mit hohem Wirkungsgrad • Die Anode ist galvanisch mit dem
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OCR Scan
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450kAW
160kAÂ
950nm1000
SFH 462
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PDF
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BS192
Abstract: BS212 D 92 M - 03 DIODE D 92 M - 02 DIODE 10D3 2n3904, itt c 92 M - 02 DIODE bs189
Text: I T T CORP/ I T T CMPNTS 31E D • 4böEböH ÜQQ1 3 Q 7 T ■ VMOS NPN AND PNP TRANSISTORS N-Channel VMOS Transistors Enhancement-Mode MOSFETsfeaturing high input impedance, high power gain, fast switching times, CMOS compatibility, no second breakdown, no thermal runaway.
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BS107
BS108
BS112
BS170
BS189
170rox.
DO-41
DO-35
BS192
BS212
D 92 M - 03 DIODE
D 92 M - 02 DIODE
10D3
2n3904, itt
c 92 M - 02 DIODE
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