DIMENSIONS CB417 Search Results

CB417

Contextual Info: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches  1.000 1.092 0.043 CB417 C O /D July 1998 A C / B O O /D 0040109C

CB417

Contextual Info: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches 1.000 1.092 0.043 CB417 C O /D July 1998 A C O / B O /D 0040109C

CB417

Contextual Info: DIMENSIONS REF. Millimetres Min. Max. Min. Max. A 8.89 0.350 B 3.683 0.145 C 25.4 D OUTLINE AND MECHANICAL DATA Inches 1.000 1.092 0.043 CB417 C O /D May 2002 A C O / B O /D 0040109D

5W zener sgs-thomson

Abstract: CB417 marking 683 zener diode 1n5359b 1N5388B zener 35b 1N5335B 1N5342B 5w zener 1N5339B STMICROELECTRONICS
Contextual Info:  1N5335B / 1N5388B 5W ZENER DIODES FEATURES VOLTAGE RANGE : 3.9 V to 200 V HERMETICALLY SEALED PLASTIC CASE HIGH SURGE CAPABILITY : 180 W 8.3 ms . DESCRIPTION CB417 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Symbol P Tstg Tj TL Parameter Power dissipation on infinite heatsink

CB417

Abstract: P6KE10A P6KE12A P6KE15A P6KE18A P6KE22A P6KE24A P6KE27A P6KE30A
Contextual Info: P6KE6V8A/440A P6KE6V8CA/440CA  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection

transil 6.8v

Abstract: CB417 diode p6ke39ca p6ke220ca 6.8V bidirectional transil p6ke68a P6KE27A P6KE30A P6KE10A P6KE12A
Contextual Info: P6KE6V8A/440A P6KE6V8CA/440CA  TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection

p6ke68a

Abstract: CB417 P6KE10A P6KE12A P6KE15A P6KE18A P6KE22A P6KE24A P6KE27A P6KE30A
Contextual Info: P6KE6V8A/440A P6KE6V8CA/440CA TRANSILTM FEATURES PEAK PULSE POWER : 600 W 10/1000µs BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. UNI AND BIDIRECTIONAL TYPES. LOW CLAMPING FACTOR. FAST RESPONSE TIME. UL RECOGNIZED. DESCRIPTION CB417 Transil diodes provide high overvoltage protection

CB417

Abstract: smd diode Coloured band marked devices Smd code S08 CB429 DIL20 F126 S020 T0220AB SOD-6 DIMENSIONS CB417
Contextual Info: LVT3V3 SMLVT3V3 / = T SG S-THO M SO N * * œ ^ M 0 M ( § s TRANSIL FEATURES • ■ ■ ■ ■ UNDIRECTIONAL TRANSIL DIODE. PEAK PULSE POWER= 600 W @ 1ms. REVERSE STAND OFF VOLTAGE = 3.3 V. LOW CLAMPING FACTOR. FAST RESPONSE TIME: Tclamping : 1ps (0 V to VBR -

Contextual Info: fZ T SGS-THOM SON LCTA6V1M 3 MONOLITHIC TRANSIL ARRAY PRELIMINARY DATA FEATURES • HIGH SURGE CAPABILITY TRANSIL ARRAY lpp = 15 A 8/20J1S ■ UP TO 18 UNIDIRECTIONAL TRANSIL FONCTIONS ■ BREAKDOWN VOLTAGE = 6V1 ■ VERY LOW CAPACITANCE ; C = 8pF at Vr = 5 V

ITA6V1M3

Contextual Info: / = 7 SGS-THOMSON ITA6V1M3 MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES • HIGH SURGE CAPABILITY TRANSIL ARRAY Ipp = 40A 8/20| as ■ UP TO 18 UNIDIRECTIONAL TRANSIL FUNCTIONS ■ BREAKDOWN VOLTAGE = 6V1 ■ LOW CLAMPING FACTOR VClA/br AT

AF126

Abstract: 0B2 tube
Contextual Info: SGS-THOM SON * 7 M g ^ [E y i(M R l© S P 7 T - 1 0 , B / 1 1 0 , B TRANSIL FEATURES • PEAK PULSE POWER= 700 W @ 1ms. ■ STAND-OFF VOLTAGE RANGE : From 10 V to 110 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME:

Contextual Info: SGS-THOMSON ITA6V1U1 R iilD g ^ ( ô iL i ï ^ ( ô ) R ! lD ( g i MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES . HIGH SURGE CAPABILITY TRANSIL ARRAY Ipp = 40 A 8/20|is • UP TO 6 UNIDIRECTIONAL TRANSIL FUNCTIONS ■ BREAK DOWN VOLTAGE : VBr= 6V1

Contextual Info: SG S-THO M SO N ITA6V1U3 MONOLITHIC TRANSIL ARRAY FOR DATA LINE PROTECTION FEATURES • ■ . . ■ HIGH SURGE CAPABILITY TRANSIL ARRAY Ipp = 40 A 8/20 is UP TO 8 UNIDIRECTIONAL TRANSIL FUNCTIONS BREAKDOWN VOLTAGE=6V1 LOW LEAKAGE CURRENT LOW CLAMPING FACTOR (VCl / VBr AT

SMD 1N60

Abstract: SMD 1N60 diode 6072a 1N56 1N60 diode SMD 6072A TUBE 1N6072 diode 1n60 sod6 package 1N60 MOS
Contextual Info: rz j S G S -T H O M S O N ^ 7£ 1N 5634A /1N 5665A 1N 6040A /1N 6072A TRANSIL FEATURES • PEAK PULSE POWER= 1500 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 11V to 200 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .

N5349B

Abstract: N5383 N536 5w zener n5352b N5342B 1n5388b
Contextual Info: T SGS-THOMSON ^7# 1N5335B / 1 N5388B 5W ZENER DIODES FEATURES • VOLTAGE RANGE : 3.9 V to 200 V ■ HERMETICALLY SEALED PLASTICCASE ■ HIGH SURGE CAPABILITY: 180 W 8.3 m s . DESCRIPTION 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Svmbol P T stg Tj

Contextual Info: SGS-THOMSON P6KE6V8A/440A [RiDO [^@[E[L[10Tr[HÌ Q D^OOOS P6KE6V8CA/440CA TRANS IL FEATURES • PEAK PULSE POWER : 600 W (10/1 OOQis) ■ BREAKDOWN VOLTAGE RANGE : From 6.8V to 440 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSETIME.

PGA68

Abstract: clcc44 SO53 material declaration semiconductor package FDIP28 schottky diode sb 5400 CLCC68 CLCC52 smd transistor marking 7622 DIP40 weight
Contextual Info: CHEMICAL CONTENT OF SEMICONDUCTOR PACKAGING SEPTEMBER 1998 Corp. Environment Strategies Corp. Package Development USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes