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    DIFFUSION TRANSISTOR Search Results

    DIFFUSION TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DIFFUSION TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SB1347 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2029 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB1347 2SD2029 2SB1347 2SD2029

    PU3219

    Abstract: PUA3119 PUA3219 PU3119
    Text: Power Transistor Arrays PUA3119 PU3119 Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUA3219 (PU3219) Unit: mm • Features Collector-base voltage (Emitter open) Collector-emitter voltage (Base open)


    Original     		PDF PUA3119 PU3119) PUA3219 PU3219) PU3219 PUA3119 PUA3219 PU3119

    2SD1266

    Abstract: 2SD1266A 2SB0941 2SB941 2SB941A
    Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0941 2SB941 and 2SB941A (2SB941A) Parameter Symbol Rating Unit VCBO 60 V Collector to base voltage 2SD1266 Collector to emitter voltage


    Original     		PDF 2SD1266, 2SD1266A 2SB0941 2SB941) 2SB941A 2SB941A) 2SD1266 2SD1266 2SD1266A 2SB0941 2SB941 2SB941A

    2SB1192

    Abstract: 2SB1192A 2SD1772 2SD1772A
    Text: Power Transistors 2SD1772, 2SD1772A Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output Complementary to 2SB1192 and 2SB1192A Unit: mm Parameter Symbol Collector to 2SD1772 base voltage 2SD1772A Collector to 2SD1772


    Original     		PDF 2SD1772, 2SD1772A 2SB1192 2SB1192A 2SD1772 2SB1192A 2SD1772 2SD1772A

    PU4120

    Abstract: PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520
    Text: Power Transistor Arrays PUB4120 PU4120 , PUB4420 (PU4420) Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUB4220 (PU4220), PUB4520 (PU4520) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE


    Original     		PDF PUB4120 PU4120) PUB4420 PU4420) PUB4220 PU4220) PUB4520 PU4520) PU4120 PU4220 PU4420 PU4520 PUB4120 PUB4220 PUB4420 PUB4520

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 Unit: mm Collector-base voltage Emitter open Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current


    Original     		PDF 2SB1317 2SD1975 2SB1317 2SD1975

    2SD1266

    Abstract: 2SB941 2SB941A 2SD1266A
    Text: Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A • Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A


    Original     		PDF 2SD1266, 2SD1266A 2SB941 2SB941A 2SD1266 2SD1266 2SB941A 2SD1266A

    2SD1264

    Abstract: 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A
    Text: Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-freauency power amplification For TV vertical deflection output Complementary to 2SB0940 2SB940 and 2SB0940A (2SB940A) ● • Absolute Maximum Ratings (TC=25˚C) Parameter


    Original     		PDF 2SD1264, 2SD1264A 2SB0940 2SB940) 2SB0940A 2SB940A) 2SD1264 2SD1264 2SB0940 2SB0940A 2SB940 2SB940A 2SD1264A

    2SD1277A

    Abstract: 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277
    Text: Power Transistors 2SD1277, 2SD1277A Silicon NPN triple diffusion planar type Darlington For midium speed power switching Complementary to 2SB0951 2SB951 and 2SB0951A (2SB951A) Unit: mm • Parameter Symbol Collector to 2SD1277 base voltage 2SD1277A Collector to


    Original     		PDF 2SD1277, 2SD1277A 2SB0951 2SB951) 2SB0951A 2SB951A) 2SD1277 2SD1277A 2SB0951 2SB0951A 2SB951 2SB951A 2SD1277

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4127 PU4127 Silicon NPN triple diffusion planar type For power amplification/switching Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 35±5 V Collector-emitter voltage (Base open)


    Original     		PDF PUB4127 PU4127)

    PU4119

    Abstract: PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519
    Text: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 9.5±0.2 • High forward current transfer ratio hFE


    Original     		PDF PUB4119 PU4119) PUB4419 PU4419) PUB4219 PU4219) PUB4519 PU4519) PU4119 PU4219 PU4419 PU4519 PUB4119 PUB4219 PUB4419 PUB4519

    2SD1267A

    Abstract: 2SB0942 2SB0942A 2SD1267
    Text: Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0942 and 2SB0942A Parameter Collector to base voltage 2SD1267 Collector to emitter voltage 2SD1267 Symbol Rating Unit VCBO 60 V 16.7±0.3


    Original     		PDF 2SD1267, 2SD1267A 2SB0942 2SB0942A 2SD1267 2SD1267A 2SB0942A 2SD1267

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4111 PU4111 , PUB4411 (PU4411) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4211 (PU4211), PUB4511 (PU4511) Unit: mm • Features 25.3±0.2 4.0±0.2 9.5±0.2 1.65±0.2 Solder Dip


    Original     		PDF PUB4111 PU4111) PUB4411 PU4411) PUB4211 PU4211) PUB4511 PU4511)

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm Parameter Symbol Collector to 2SC3982 base voltage 2SC3982A Collector to TC=25˚C 2SC3982 emitter voltage 2SC3982A Ratings


    Original     		PDF 2SC3982, 2SC3982A 2SC3982 2SC3982A

    2SB938

    Abstract: 2SB938A 2SD1261 2SD1261A
    Text: Power Transistors 2SD1261, 2SD1261A Silicon NPN triple diffusion planar type Darlington Unit: mm For power amplification Complementary to 2SB938 and 2SB938A • Absolute Maximum Ratings 10.0±0.3 1.5max. 1.1max. 2.0 ● High foward current transfer ratio hFE


    Original     		PDF 2SD1261, 2SD1261A 2SB938 2SB938A 2SD1261 2SB938A 2SD1261 2SD1261A

    2SC496-0

    Abstract: 2SC4960 2SC4960A
    Text: Power Transistors 2SC4960, 2SC4960A Silicon NPN triple diffusion planar type For power switching Unit: mm • Features ● ● ■ Absolute Maximum Ratings Parameter Symbol Collector to 2SC4960 base voltage 2SC4960A Collector to emitter voltage Collector to


    Original     		PDF 2SC4960, 2SC4960A 2SC4960 SC4960, 2SC496-0 2SC4960 2SC4960A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1573, 2SC1573A, 2SC1573B Silicon NPN triple diffusion planar type For high breakdown voltage general amplification For small TV video output Complementary to 2SC1573 and 2SA0879


    Original     		PDF 2002/95/EC) 2SC1573, 2SC1573A, 2SC1573B 2SC1573 2SA0879

    BUD86

    Abstract: BUD87
    Text: BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Multi diffusion technology D High reverse voltage D Glass passivation D Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies


    Original     		PDF BUD86 BUD87 D-74025 BUD86 BUD87

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUB4119 PU4119 , PUB4419 (PU4419) Silicon NPN triple diffusion planar type darlington For power amplification/switching Complementary to PUB4219 (PU4219), PUB4519 (PU4519) Unit: mm • Features 25.3±0.2 9.5±0.2 1.65±0.2 Solder Dip


    Original     		PDF PUB4119 PU4119) PUB4419 PU4419) PUB4219 PU4219) PUB4519 PU4519)

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor Arrays PUA3120 PU3120 Silicon NPN triple diffusion planar type darlington For power amplification Complementary to PUA3220 (PU3220) Unit: mm 20.2±0.3 • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60


    Original     		PDF PUA3120 PU3120) PUA3220 PU3220)

    2SB1317

    Abstract: 2SD1975
    Text: Power Transistors 2SD1975 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1317 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2SD1975 2SB1317 2SB1317 2SD1975

    2SB1347

    Abstract: 2SD2029
    Text: Power Transistors 2SD2029 Silicon NPN triple diffusion planar type Unit: mm For high power amplification Complementary to 2SB1347 5.0±0.3 3.0 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)


    Original     		PDF 2SD2029 2SB1347 2SB1347 2SD2029

    PU4110

    Abstract: PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510
    Text: Power Transistor Arrays PUB4110 PU4110 , PUB4410 (PU4410) Silicon NPN triple diffusion planar type For power amplification/switching Complementary to PUB4210 (PU4210), PUB4510 (PU4510) Unit: mm • Features Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF PUB4110 PU4110) PUB4410 PU4410) PUB4210 PU4210) PUB4510 PU4510) PU4110 PU4210 PU4410 PU4510 PUB4110 PUB4210 PUB4410 PUB4510

    BUD87

    Abstract: smd transistor 023 BUD86 BUD86-SMD smd transistor 239
    Text: T em ic BUD86 • BUD87 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • Multi diffusion technology High reverse voltage • Glass passivation Short switching times Applications Electronic lamp ballast circuits Switch-mode power supplies


    OCR Scan     		PDF bud86 bud87 BUD86 BUD87 smd transistor 023 BUD86-SMD smd transistor 239