op amp cookbook
Abstract: N-Channel JFET Vgsoff N-Channel jfet 100V depletion analog optocoupler hcnr201 Texas Instruments LED Cookbook n-Channel Depletion Mosfets IRFU9120 equivalent dual P-Channel JFET IRFU9120 OPA364
Text: Op Amp Stone Soup A “Cookbook” Collection of Single Supply Op Amp Circuits Tim Green Linear Applications Manager Tucson Division green_tim@ti.com The Story of Stone Soup Some travelers come to a village, carrying nothing more than an empty pot. Upon their arrival, the villagers are unwilling to share any of their
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my/fkee/BEE2213
20AND
20BEP
20notes/
20FET
HCNR200/HCNR201
op amp cookbook
N-Channel JFET Vgsoff
N-Channel jfet 100V depletion
analog optocoupler hcnr201
Texas Instruments LED Cookbook
n-Channel Depletion Mosfets
IRFU9120 equivalent
dual P-Channel JFET
IRFU9120
OPA364
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UG381
Abstract: Spartan-6 LX45 JESD209A Spartan-6 FPGA LX9 JESD79-3 ISERDES2 ibis file for spartan6 LX9 HDMI verilog Xilinx Spartan-6 LX9 verilog code for ddr2 sdram to spartan 3
Text: Spartan-6 FPGA SelectIO Resources User Guide [optional] UG381 v1.0 June 24, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG381
UG381
Spartan-6 LX45
JESD209A
Spartan-6 FPGA LX9
JESD79-3
ISERDES2
ibis file for spartan6 LX9
HDMI verilog
Xilinx Spartan-6 LX9
verilog code for ddr2 sdram to spartan 3
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AN1202
Abstract: No abstract text available
Text: A Comparison of CML and LVDS for High-Speed Serial Links AN1202 Introduction LVDS Low-Voltage Differential Signaling is a widely used low-power, low-voltage standard for implementing parallel and low-rate serial differential links in data communication applications. The LVDS standard as currently defined and
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AN1202
AN1202
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Untitled
Abstract: No abstract text available
Text: Title Tsi574 Serial RapidIO Switch Hardware Manual Final November 2007 80B8050_MA001_02 Trademarks TUNDRA is a registered trademark of Tundra Semiconductor Corporation Canada, U.S., and U.K. . TUNDRA, the Tundra logo, Tsi574, and Silicon Behind the Network, are trademarks of Tundra Semiconductor Corporation.
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Tsi574
80B8050
Tsi574,
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JESD79-2c
Abstract: oserdes2 DDR spartan6 ISERDES2 JESD79-3 UG381 ISERDES xc6slx xc6slx75t xc6slx75 DVI VHDL
Text: Spartan-6 FPGA SelectIO Resources User Guide UG381 v1.3 March 15, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG381
JESD79-2c
oserdes2 DDR spartan6
ISERDES2
JESD79-3
UG381
ISERDES
xc6slx
xc6slx75t
xc6slx75
DVI VHDL
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Untitled
Abstract: No abstract text available
Text: Spartan-6 FPGA SelectIO Resources User Guide UG381 v1.6 February 14, 2014 Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum extent permitted by applicable law: (1) Materials are made available "AS IS" and with all faults, Xilinx hereby DISCLAIMS ALL
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UG381
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
667Mbps/533Mbps
M01E0107
E1009E20
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DDR2-533
Abstract: DDR2-667
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFD Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFD
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E1009E30
DDR2-533
DDR2-667
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Untitled
Abstract: No abstract text available
Text: Spartan-6 FPGA SelectIO Resources User Guide UG381 v1.5 February 7, 2013 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG381
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UG381
Abstract: hitachi sr 2010 receiver oserdes2 DDR spartan6 HDMI verilog code ISERDES2 JESD79-3 XC6SLX Spartan-6 LX45 XC6slx45 xc6slx75
Text: Spartan-6 FPGA SelectIO Resources User Guide UG381 v1.4 December 16, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the
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UG381
UG381
hitachi sr 2010 receiver
oserdes2 DDR spartan6
HDMI verilog code
ISERDES2
JESD79-3
XC6SLX
Spartan-6 LX45
XC6slx45
xc6slx75
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DDR2-667
Abstract: EDE5108AJSE-6E-E EBE51FD8AJFT
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AJFT Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AJFT
512MB
240-pin
655-ball
75V/-0
667Mbps
M01E0107
E1087E20
DDR2-667
EDE5108AJSE-6E-E
EBE51FD8AJFT
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PC2-4200
Abstract: EDE5108AGSE-6E-E DDR2-533 DDR2-667 EBE51FD8AGFD EBE51FD8AGFN
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AGFD
EBE51FD8AGFN
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
E0869E30
PC2-4200
EDE5108AGSE-6E-E
DDR2-533
DDR2-667
EBE51FD8AGFD
EBE51FD8AGFN
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DDR2-667
Abstract: No abstract text available
Text: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACWR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE41FE4ACWR
240-pin
655-ball
667Mbps
M01E0706
E1385E10
DDR2-667
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DDR2-667
Abstract: ss921
Text: DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACWT Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE41FE4ACWT
240-pin
655-ball
667Mbps
M01E0706
E1382E10
DDR2-667
ss921
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DDR2-667
Abstract: SS-921
Text: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACWR Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FE8ACWR
240-pin
655-ball
667Mbps
M01E0706
E1384E10
DDR2-667
SS-921
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DDR2-667
Abstract: EDE1108ACSE-6E-E
Text: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACFT Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FE8ACFT
240-pin
655-ball
667Mbps
M01E0706
E1090E30
DDR2-667
EDE1108ACSE-6E-E
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DDR2-667
Abstract: No abstract text available
Text: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACWT Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FE8ACWT
240-pin
655-ball
667Mbps
M01E0706
E1381E10
DDR2-667
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 2GB Fully Buffered DIMM EBE21FE8ACFR Specifications Features • Density: 2GB • Organization 256M words x 72 bits, 2 ranks • Mounting 18 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE21FE8ACFR
240-pin
655-ball
667Mbps
M01E0706
E1345E10
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DDR2-667
Abstract: EDE1108ACSE-6E-E elpida DDR2 routing Sigma ddr elpida memory ddr2
Text: DATA SHEET 1GB Fully Buffered DIMM EBE10FE8ACFT Specifications Features • Density: 1GB • Organization 128M words x 72 bits, 1 rank • Mounting 9 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE10FE8ACFT
240-pin
655-ball
667Mbps
M01E0706
E1170E20
DDR2-667
EDE1108ACSE-6E-E
elpida DDR2 routing
Sigma ddr
elpida memory ddr2
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 4GB Fully Buffered DIMM EBE41FE4ACFT Specifications Features • Density: 4GB • Organization ⎯ 512M words x 72 bits, 2 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package ⎯ 240-pin fully buffered, socket type dual in line
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EBE41FE4ACFT
240-pin
655-ball
75V/-0
667Mbps
M01E0107
E1091E10
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DDR2-533
Abstract: DDR2-667 PC2-4200F elpida DDR2 routing
Text: PRELIMINARY DATA SHEET 512MB Fully Buffered DIMM EBE51FD8AHFT EBE51FD8AHFE EBE51FD8AHFL Specifications Features • Density: 512MB • Organization 64M words x 72 bits, 1 rank • Mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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512MB
EBE51FD8AHFT
EBE51FD8AHFE
EBE51FD8AHFL
512MB
240-pin
655-ball
75V/-0
667Mbps/533Mbps
M01E0107
DDR2-533
DDR2-667
PC2-4200F
elpida DDR2 routing
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SN75176
Abstract: SLLA108 SN65MLVD200 SN65MLVD200D SN65MLVD201D MLVD200 SN75176 APPLICATION
Text: Application Report SLLA108 - February 2002 Introduction to M-LVDS TIA/EIA-899 Jim Dietz HPL ABSTRACT LVDS (TIA/EIA-644) devices have seen rapid incorporation into electronic designs where high speed, low power, and electromagnetic compatibility are important. LVDS devices
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SLLA108
TIA/EIA-899)
TIA/EIA-644)
SN75176
SN65MLVD200
SN65MLVD200D
SN65MLVD201D
MLVD200
SN75176 APPLICATION
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DDR2-667
Abstract: EDE1108ACSE-6E-E
Text: DATA SHEET 4GB Fully Buffered DIMM EBE42FE8ACFR Specifications Features • Density: 4GB • Organization 512M words x 72 bits, 4 ranks • Mounting 36 pieces of 1G bits DDR2 SDRAM sealed in FBGA • Package 240-pin fully buffered, socket type dual in line
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EBE42FE8ACFR
240-pin
655-ball
667Mbps
M01E0706
E1328E30
DDR2-667
EDE1108ACSE-6E-E
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Untitled
Abstract: No abstract text available
Text: SIGNETICS DEFINITION OF TERMS REGULATORS OP AMPS AVERAGE INPUT OFFSET VOLTAGE t° C O E F F -T h e ch a n g e in input offset voltage divided by the change in ambient temper ature producing it. DROPOUT VOLTAGE — The input-output voltage differential at which the circuit ceases to regulate against further reductions
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