Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7322130BMS/SG is an 2M x 32 bits Dynamic RAM MODULE w hich is assembled 4 pieces of 2M x 8bit DRAMs in 28 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7322130BMS/SG is
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GMM7322130BMS/SG
GMM7322130BMS/SG
GMM7322130BMS
GMM7322130BMSG
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Fin Configuration 32 DIP The GM23C8001B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation. It is designed to be suitable
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GM23C8001B
120ns.
120ns
402A7S7
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ci 740
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Fin Configuration 32 DIP/SOP The GM23C8000A high performance read only memory is organized as 1,048,576 x 8 bits and has an access time of 120/150ns. The GM23C8000A offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000A
120/150ns.
ci 740
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010DS/SG is
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GMM7321010DS/SG
7321010DS/SG
GMM7321010DS/SG
GMM7321010DS
GMM7321010DSG
111in
11111n
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7324200ANS/SG is a 4M x 32 bits Dynamic RAM MODULE which is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7324200ANS/SG is
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GMM7324200ANS/SG
GMM7324200ANS/SG
GMM7324200ANS
GMM7324200ANSG
1111111111111111111111l
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
D0Qb212
GMM7321000AN
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321000DS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g
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GMM7321000DS/SG
7321000DS/SG
GMM7321000DS/SG
GMM7321000DS
GMM7321000DSG
0G0b271
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23C4000
Abstract: ci 0804
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C4000A high performance read only memory is organized as 524,288 words by eight bit and has an access time of 120/150ns. It is designed to be compatible with all microprocessors and similar
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GM23C4000A
120/150ns.
070-A18
402B757
0DD4775
23C4000
ci 0804
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Pin Configuration 32 DIP/SOP The GM23C8000B high performance read only memory is organised as 1,048,576 x 8 bits and has an access time of 120ns. The GM23C8000B offers automatic power down controlled by the mask programmed CE or CE input. The low power feature
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GM23C8000B
120ns.
120ns
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DNR2
Abstract: GE SG80 S1
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010ES/SG is an lM x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The G M M 7321010ES/SG is
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GMM7321010ES/SG
7321010ES/SG
GMM7321010ES/SG
GMM7321010ES
GMM732101OESG
40BB757
DNR2
GE SG80 S1
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GMM7324
Abstract: GMM73241 GMM7324100BNS
Text: @ LG Semicon. Co. LTD. Description Features The GMM7324100BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assembled 8 pieces of 4M x 4bit DRAMs in 24/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7324100BNS/SG is
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GMM7324100BNS/SG
GMM7324100BNS/SG
GMM7324100BNS
GMM73241OOBNSG
GMM7324
GMM73241
GMM7324100BNS
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321000CS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 8 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g
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GMM7321000CS/SG
7321000CS/SG
GMM7321000CS/SG
GMM7321000CS
-GMM7321000CSG
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GMM7322000B
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7322000BS/SG is a 2M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 1M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322000BS/SG is optimized for
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GMM7322000BS/SG
GMM7322000BS/SG
GMM7322000BS
GMM7322000BSG
111111111111111111111111il
111111il
1111il
GMM7322000B
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Untitled
Abstract: No abstract text available
Text: GM76U256CL/LL LG Semicon Co.,Ltd. 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76U256C family is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.6wm advanced CMOS tech nology and operated a single 3.0V supply.
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GM76U256C
GM76U256CL/LL
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
GMM7321000AN
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GMM7322010C
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7322010CS/SG is a 2M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7322010CS/SG is
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GMM7322010CS/SG
7322010CS/SG
GMM7322010CS/SG
GMM7322010CS
GMM7322010CSG
11111111111111111irrvi
GMM7322010C
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7322010DS/SG is a 2M x 32 bits D y n am ic RA M M O D U LE w h ic h is assembled 16 pieces of 1M x 4bit EDO DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7322010DS/SG is
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GMM7322010DS/SG
GMM7322010DS/SG
GMM7322010DS
GMM7322010DSG
Sin125
11111111111111111111111111111111i
M02A757
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321010CS/SG is an 1M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assem bled 8 pieces o f 1M x 4bit EDO DRAMs in 20/26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GM M 7321010CS/SG is
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GMM7321010CS/SG
7321010CS/SG
GMM7321010CS/SG
GMM7321010BS
-GMM7321010BSG
1111111111111111111111111111111111irrii
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD._ Description Features The GMM7324210BNS/SG is a 4M x 32 bits Dynamic RAM MODULE w hich is assem bled 8 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7324210BNS/SG is
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GMM7324210BNS/SG
GMM7324210BNS/SG
GMM732421OBNS
GMM732421OBNSG
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B772 equivalent
Abstract: tf b772
Text: @ LG Semicon. Co. LTD. Description Features The GMM7328210BS/SG is an 8M x 32 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 26 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GM M 7328210BS/SG is
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GMM7328210BS/SG
7328210BS/SG
GMM7328210BS/SG
GMM732821
GMM7328210BSG
H0BB757
B772 equivalent
tf b772
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7321200ANS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7321200ANS/SG is
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GMM7321200ANS/SG
16bit
GMM7321200ANS/SG
GMM7321200ANS
GMM7321200ANSG
11111111111111111111111111ii
000b3fc
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GMM7321000B
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7321000BNS/SG is an 1M x 32 bits Dynamic RAM MODULE w hich is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the p rin te d c irc u it board w ith d eco u p lin g capacitors. The GMM7321000BNS/SG is
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GMM7321000BNS/SG
16bit
GMM7321000BNS/SG
GMM7321000BNS
GMM7321OOOBNSG
000b22b
GMM7321000B
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7328200AS/SG is a 8M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 4M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7328200AS/SG is optimized for
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GMM7328200AS/SG
GMM7328200AS/SG
GMM7328200AS
GMM7328200ASG
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GMM7324200BNS/SG is a 4M x 32 bits Dynamic RAM M ODULE w hich is assembled 8 pieces of 4M x 4bits DRAMs in 24/26 pin SOJ package on both sides the p rin te d c irc u it board w ith d e co u p lin g capacitors. The GMM7324200BNS/SG is
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GMM7324200BNS/SG
GMM7324200BNS/SG
GMM7324200BNS
GMM7324200BNSG
Acces757
M0267
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