DHR 100 C10 Search Results

BUSBAR calculation

Abstract: DHR-C10
Contextual Info: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output.

11 kv vfd

Abstract: DHR-C10 lem module 50 DHR200C10 transducer 61326 single phase ac vfd lem 50 p DHR 100 C10 DHR300 DHR500
Contextual Info: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.

Contextual Info: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 400 A

Contextual Info: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 1000 A

LEM L

Abstract: SCR single phase ac voltage controller IC DHR-C10 DHR500 lem module 50 scr phase angle controller k 4070
Contextual Info: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.

BUSBAR calculation

Abstract: DHR-C10 lem module mm320
Contextual Info: AC/DC Current Transducer DHR-C10 The transducer for the electronic measurement of DC & distorted AC waveform currents, with galvanic isolation between the primary circuit power and the secondary circuit (measurement). True RMS 0-10V voltage output. IPN = 100 . 1000 A

DHR-C10

Abstract: 11 kv vfd VFD WITH AC AND DC POWER
Contextual Info: IPN = 100.1000 A AC/DC Current transducer DHR-C10 The transducer for the electronic measurement DC & distorted AC waveforms current, with galvanic isolation between the primary High power and the secondary circuits (Electronic circuit). True RMS 0-10V voltage output.

CH-1228

Abstract: capteur effet hall capteur hall ac current hall sensor signal conditioner lem ch-1228 DHR-C420 CAPTEUR A EFFET DE HALL C420 variable frequency drive precision 4-20ma current source
Contextual Info: Diagrams Diagram 1 Specifications DHR-C5/10 DHR-C420 Output Signal DHR DHR Output Connector 1 + 2(none) 3(out) 4(GND) 24 VDC Power Output Connector 1(+) 2(out) 3(none) 4(GND) Output Limit C10 and C420 (+) (-) (-) 10k (-) (+) (-) (+) Load Load (Controller, meter etc)

Lem MODULE 1000A

Abstract: DHR-C420 ac current hall sensor signal conditioner C420 LEM sensor CURRENT travers motor lem courant series
Contextual Info: Diagrams Diagram 1 Specifications DHR-C420 DHR-C5/10 Output Signal DHR DHR Output Connector 1 Vcc 2(NC) 3(Vout) 4(GND) 24 VDC Power Output Connector 1(Vcc) 2(Iout) 3(NC) 4(GND) Output Limit C5 C10 C420 (-) 10k (-) (+) Load (Controller, meter etc) 7VDC 14VDC

HT 1200-4

Abstract: OZ 9972 B41DHR B65DHR B69DHR
Contextual Info: 8 7 5 6 4 1 2 3 REVISIONS REV. ECO. NO DESCRIPTION DATE BY A 1072 INITIAL RELEASE 06/23/2006 HT B 1479 CLARIFY TERMINATION TOLERANCE, TABULATED MATERIAL CALL-OUT & ADDED ALL POSITIONS 8/23/2007 VJ F F FIRST POSITION INDICATOR E D B A E E 2X .125 3.18 .050±.005 1.27±0.13

Contextual Info: TO S H IB A «10=17240 0 0 2 1 1 5 4 b 42E D L O G I C / M E M O R Y 1,048,576 WORD x 4 BIT DYNAMIC RAM DESCRIPTION IT0S2 * This is advanced information and specifications. are subject to change without notice. ¿ 3 /8 The TC514400J/Z is the new generation dynamic RAM organized 1)048,576 words by 4

D41256

Abstract: 41256 ram 41256
Contextual Info: Y * ryÆ L W NEC Electronics Inc. PPD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The iiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,

Contextual Info: MOSEL VÊTEUC V53C665 64K x 16 BIT FAST PAGE MODE WRITE-PER-BIT CMOS DYNAMIC RAM V53C665 80 ns 100 ns Max. RAS Access Time, tRAC 80 ns 100 ns Max. Column Address Access Time, (tCAA) 45 ns 55 ns Min. Fast Page Mode Cycle Time, (tp c ) 55 ns 65 ns Min. Read/Write Cycle Time, (tRC)

Contextual Info: nue 2 « SEC NEC Electronics Inc. JJPD424256 262,144 X 4-Bit Dynamic CMOS RAM July 1992 Description The¿/PD424256 is a fast-page dynamic RAM organized as 262,144 words by 4 bits and designed to operate from a single + 5-volt power supply. Advanced polycide

PD41256

Abstract: JA-11
Contextual Info: ¡J PD41256 262,144 X 1-Bit Dynamic NMOS RAM rm W NEC Electronics Inc. Description The jiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel, silicon-gate process for high density, high performance,

Contextual Info: fiPD421002 1,048,576 X 1-Bit Dynamic CMOS RAM V NEC Electronics Inc. Description Pin Configurations The nPD421002 is a static-colum n dynamic RAM orga­ nized as 1,048,576 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced

d41464c

Abstract: NEC 41464c ud41464 41464c RAM
Contextual Info: NEC JUPD41464 65,536 X 4-Bit Dynamic NMOS RAM NEC Electronics Inc. Description Pin Configurations The /UPD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup­ ply and fabricated with a double polylayer, N-channel

AS4C256K16F0-60JC

Abstract: 1j30 AS4C256K16F0 AS4C256K16F0-60 1J3000
Contextual Info: H ig h P e rfo rm a n c e 256K.X 16 CMOS DRAM H A S4C256K 16F0 A H ia h Speed 2 5 6 K X 1 6 CMOS DRAM F a st p a g e m ode Prelim inary information features • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I/O • JEDEC sta n d a rd packages

Contextual Info: H C R O N SEM ICONDUCTOR INC b7E D • blllS4'i ODOTÖMT T47 ■ URN PRELIMINARY M T4LC 4007J S " JM E Gx4 D R A M MICRON I s e » .c o m > u !:to i« c DRAM 1 MEG x 4 DRAM 3.3V EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • •

TM124EAD9C

Abstract: TM124EAD9B-6
Contextual Info: TM124EAD9B, TM124EAD9C 1 048 576-WORD BY 9-BIT DYNAMIC RANDOM-ACCESS MEMORY MODULES SMMS191 — JANUARY 1991 This Data Sheet is Applicable to A ll TM124EAD9BS and TM124EAD9CS Symbolized with Revision "B" and Subsequent Revisions as Described on Page 6-44.

Contextual Info: O K I Semiconductor MSC23441 -xxBS10/DS10 IPirgílóMÍlrDsirf 4,194,304>Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23441-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory M odule composed of ten 16-Mb DRAMs in SOJ MSM5116400 packages m ounted with

Contextual Info: O K I Semiconductor MSC23136C/CL-xxBS10/PS10 1,048,576-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE D E S C R IP T IO N The OKI MSC23136C/CL-xxBS10/DS10 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in SOJ

Contextual Info: SIEMENS 1 M X 36-Bit Dynamic RAM Module 2 M X 18-Bit Dynamic RAM Module HYM 361110/20S-60/-70/-80 Advanced Information • 1 048 576 words by 36-bit organization (alternative 2 097 152 words by 18-bit) • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version)

NEC D41464

Abstract: D41464 IPD41464 L-12
Contextual Info: JIPD41464 65,536 X 4-Bit Dynamic NMOS RAM F IH l NEC Electronics Inc. Description Pin Configurations The f i PD41464 is a 65,536-word by 4-bit dynamic RAM designed to operate from a single + 5-volt power sup­ ply and fabricated with a double polylayer, IM-channel