DG17BE4 Search Results
DG17BE4 Datasheets Context Search
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Contextual Info: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7Tb414e KM616513 DG17bE4 251 H S r i G K CMOS SRAM 32,768 WORD X 16 BIT FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 50mA(max.) (CMOS): 1 mA(max.) |
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7Tb414e KM616513 DG17bE4 KM616513 288-bit 400mil) |