DFN3 Search Results

DFN322

Abstract: TS16949 ZXMN2F34MA ZXMN2F34MATA
Contextual Info: ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN

DFN322

Contextual Info: Package information - DFN322 Surface mounted, 3 pin package Package outline e D e E4 E2 E L 3X b (3X) D2 Bottom View A A1 A3 Top View Side View DIM Millimeters Inches DIM Millimeters Inches Min. Max. Min. Max. 0.80 1.00 0.0315 0.0393 0.002 e A3 0.153 0.253

Contextual Info: Analog Power AMS930N Asymmetric Dual N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) Q1 20 Q2 30 PRODUCT SUMMARY rDS(on) (mΩ) 28 @ VGS = 5V 16 @ VGS = 5V DFN3X3-8L Typical Applications:

DFN2020

Abstract: DMS2120LFWB power diode package DFN3020 632 diode DMP2160UFDB
Contextual Info: New Product Announcement MOSFET solutions save space and improve performance The DMS2220LFDB and DMS2120LFWB co-package a 20V P-channel enhancement mode MOSFET with a companion diode in a choice of 2mmx2mm DFN2020 and 3mmx2mm DFN3020 packages. The DMP2160UFDB, copackages two of the same

Contextual Info: 333 -8 PSMN5R8-30LL DF N3 N-channel DFN3333-8 30 V 5.8 mΩ logic level MOSFET Rev. 3 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: AP4527GN3 Preliminary Advanced Power Electronics Corp. Bottom Exposed DFN N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 Low On-resistance D2 D2 N-CH BVDSS RDS ON Lower Profile DFN3*3 RoHS Compliant 20V G1 S1 35m ID S2 G2 4.7A P-CH BVDSS -20V RDS(ON)

Contextual Info: AP8802EV3 USER GUIDE DESCRIPTION The AP8802EV3, Figure 1, is a PCB constructed using an FR4 base for evaluating the AP8802 LED driver with internal switch in DFN3030-10 package. The evaluation board can be used to drive an external choice of LEDs; the total forward voltage across the LEDs depending on the number and

CDF-AEC-Q100

Abstract: EN60749-21 JESD22-A113 JESD22-B102 MLX75303 SFH421 2 SCHMITT TRIGGER smd
Contextual Info: MLX75303 Optical Schmitt Trigger Features and Benefits Very high photo sensitivity Supply voltage range 3.0V to 5.5V Standard SO8 package with open cavity Standard DFN3x3 with open cavity TTL and CMOS compatible Open drain output Active low output signal Lead free component, suitable for lead free soldering profile 260˚C target , MSL3

p8302a

Abstract: DFN-3x3 P8302 PAM8302AASCR PAM8302 "Audio Amplifier" MSOP pam8302a PAM8302AAYCR DFN-3x3-8
Contextual Info: PAM8302A 2.5W Filterless Class-D Mono Audio Amplifier Par t Number Package PAM8302AASCR MSOP-8 PAM8302AA DCR SOP-8 PAM8302AAYCR DFN3x3-8 Pin Configuration Top View DFN3x3 Top View MSOP-8/SOP-8 SD 1 8 VO- SD 1 NC 2 7 GND NC 2 IN+ 3 6 VDD IN+ 3 IN- 4 5 VO+ IN-

SSPS7330N

Abstract: MosFET
Contextual Info: SSPS7330N 11 A , 30 V, RDS ON 22 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide

SSPS920NE

Abstract: MosFET
Contextual Info: SSPS920NE 7.1 A, 20 V, RDS ON 20 mΩ Ω Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3*3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to

SSPS7630N

Abstract: MosFET
Contextual Info: SSPS7630N 9.4 A, 30 V, RDS ON 19 mΩ Ω Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION DFN3*3-8PP These miniature surface mount MOSFETs utilize a high cell density trench process to

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS IDS33003 REV 1-2012 MODEL SC-70-3 SOT-323 ACCEPTS 33003 PARTIAL LISTING ANALOG KS-3 CENTRAL SUPERMINI TM * DOIDES INC. DFN322 *1 NEC PKG No. 30 ON SEMI CASE 419-AB-01

Contextual Info: DISCONTINUED ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V BR DSS RDS(on) (Ω) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low onresistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN

DFN33

Contextual Info: AP2428GN3 RoHS-compliant Product Advanced Power Electronics Corp. ▼ Bottom Exposed DFN N-CHANNEL ENHANCEMENT MODE POWER MOSFET D1 D1 ▼ Low On-resistance D2 D2 ▼ Lower Profile DFN3*3 D2 G1 S1 BVDSS 30V RDS ON 27mΩ ID S2 G2 5.5A D1 D1 G1 D2 G2 S1 S2

Contextual Info: SSPS7100N 6.2 A , 100 V, RDS ON 62 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide

SSPS924NE

Abstract: MosFET
Contextual Info: SSPS924NE 9.2A , 20V , RDS ON 12 mΩ Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DFN3x3-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide

DFN-3x3

Abstract: dfn3x3
Contextual Info: DFN3x3>DFN2X3 & DFN3X2 ALPHA & OMEGA Tape and Reel Data SEMICONDUCTOR, LTD. DFN3x3, DFN2X3 & DFN3X2 Carrier Tape KO T ► FEEDING DIRECTION UNIT: MM PAC T'AG E IJFN3: :3 BFN3:-'2 DFN2:-'3 AO BO F0 DO HI 1,50 +0,10 -0,00 1,00 8,00 1,75 3,50 4,00 4,0 01 2,00

DFN3x3-10L

Contextual Info: w a ALPHA & OMEGA SEMICONDUCTOR Document No. PO— 00053 Version DFN3x3 10 L EP1 S PACKAGE rev C OUTLINE •D- 10 o Û QQQ C 2x TOP VIEW EE ai BOTTOM VIEW i— A 1 SEATING PLAN û d d d C SIDE VIEW 1 ^ PIN #1 ID BOTTOM VIEW □ption 2 RECOMMENDED LAND PATTERN

DFN3X3-8L

Abstract: DFN-3x3
Contextual Info: 苏州硅能半导体科技股份有限公司 Suzhou Silikron Semiconductor Corporation DFN3X3-8L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E b L D2 E2 e Rev.A Dimension In Millimeters Nom Max 0.750 0.800 0.050 0.200REF 2.950 3.000 3.050 2.950 3.000 3.050

Contextual Info: ZXLD1366EV2 USER GUIDE DESCRIPTION The ZXLD1366EV2, Figure 1, is a PCB constructed using an aluminium base for evaluating the ZXLD1366 LED driver with internal switch, in DFN3030-6 package [1]. The evaluation board can be used to drive an external choice of LEDs; the total forward voltage across the LEDs depending on the number and type connected.

package

Abstract: aon4409 AON3404 AON3603 AON4404 AON4605 AON4604 AON4703 Alpha Omega cross AON4405
Contextual Info: Document No. DSMT-0003 Rev. 1 Page: 1/1 PCB Land Design and Surface Mount for DFN3x2 and DFN3x3 Punched Packages Introduction DFN package is a plastic encapsulated package with a copper lead frame substrate. It offers near chip scale footprint, thin profile, low weight and good thermal and electrical performance.

Contextual Info: 333 -8 PSMN3R8-30LL DF N3 N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Rev. 4 — 12 December 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and power

Contextual Info: A Product Line of Diodes Incorporated PAM8304 3W MONO CLASS D AUDIO AMPLIFIER Description Pin Assignments The PAM8304 is a mono filter-less Class-D amplifier with high SNR DFN3X3-8L Top View and differential input that helps eliminate noise. The PAM8304 supports 2.8V to 6V operation make it idea for up to 4 cells alkaline