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    DFN1010 Search Results

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    DFN1010 Price and Stock

    Nexperia PMDXB600UNELZ

    MOSFETs PMDXB600UNEL/SOT1216/DFN1010B-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMDXB600UNELZ Reel 40,000 5,000
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    • 10000 $0.048
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    Nexperia BC847AQAZ

    Bipolar Transistors - BJT BC847AQA/SOT1215/DFN1010D-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC847AQAZ Reel 30,000 5,000
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    • 10000 $0.0273
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    Nexperia BC817-40QAZ

    Bipolar Transistors - BJT BC817-40QA/SOT1215/DFN1010D-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC817-40QAZ Reel 25,000 5,000
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    • 10000 $0.0266
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    Nexperia BC847QASZ

    Bipolar Transistors - BJT BC847QAS/SOT1216/DFN1010B-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BC847QASZ Reel 5,000 5,000
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    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.043
    		Buy Now

    Nexperia PMDXB550UNEZ

    MOSFETs PMDXB550UNE/SOT1216/DFN1010B-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI PMDXB550UNEZ Reel 10,000
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    • 1000 -
    • 10000 $0.09
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    Find more DFN1010 price and stock on Findchips.com

    DFN1010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 BC847QAS 45 V, 100 mA NPN/NPN general-purpose transistor 29 July 2014 Product data sheet 1. General description NPN/NPN general-purpose transistor in a leadless ultra small DFN1010B-6 SOT1216 Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: BC857QAS.


    Original     		PDF BC847QAS DFN1010B-6 OT1216) BC857QAS. BC847QAPN. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 8 July 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB75UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4260QA DFN1010D-3 OT1215) PBSS5260QA. AEC-Q101

    PQMD12

    Abstract: No abstract text available
    Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot


    Original     		PDF DFN1010 OT963 DFN1010B-6 DFN0806 PQMD12

    MOSFET TRANSISTOR SMD MARKING CODE 11

    Abstract: NXP SMD TRANSISTOR MARKING CODE s1
    Text: DF N1 10B -6 PMDXB600UNE 20 V, dual N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB600UNE DFN1010B-6 OT1216) MOSFET TRANSISTOR SMD MARKING CODE 11 NXP SMD TRANSISTOR MARKING CODE s1

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB75UPE 20 V, P-channel Trench MOSFET 4 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB75UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMDXB950UPE 20 V, dual P-channel Trench MOSFET 10 September 2013 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMDXB950UPE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65ENE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS4230QA 30 V, 2 A NPN low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS4230QA DFN1010D-3 OT1215) PBSS5230QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65UPE 12 V, P-channel Trench MOSFET 18 February 2014 Preliminary data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65UPE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5260QA 60 V, 1.7 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5260QA DFN1010D-3 OT1215) PBSS4260QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 30 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB56EN DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 10B -6 PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 7 October 2013 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic


    Original     		PDF PMCXB900UE DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB65ENE 30 V, N-channel Trench MOSFET 13 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB65ENE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB40UNE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB40UNE 12 V, N-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB40UNE DFN1010D-3 OT1215)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5230QA 30 V, 2 A PNP low VCEsat BISS transistor 23 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5230QA DFN1010D-3 OT1215) PBSS4230QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PBSS5130QA 30 V, 1 A PNP low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF PBSS5130QA DFN1010D-3 OT1215) PBSS4130QA. AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 2x 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area


    Original     		PDF DFN1010D-3 OT1215 sot1215

    Untitled

    Abstract: No abstract text available
    Text: Reflow soldering footprint Footprint information for reflow soldering of DFN1010B-6 package SOT1216 0.9 0.35 0.35 0.15 0.2 6x 0.15 1.3 1.2 0.35 0.25 0.5 0.6 0.35 0.25 1.1 0.3 (6x) 1 1.35 solder land solder land plus solder paste occupied area solder resist


    Original     		PDF DFN1010B-6 OT1216 sot1216

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0B -6 NX7002BKXB 60 V, dual N-channel Trench MOSFET 10 December 2014 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF NX7002BKXB DFN1010B-6 OT1216)

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB350UPE 20 V, P-channel Trench MOSFET 19 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB350UPE DFN1010D-3 OT1215)

    bc807

    Abstract: No abstract text available
    Text: '  BC807-25QA; BC807-40QA ' 1  45 V, 500 mA PNP general-purpose transistors Rev. 1 — 30 August 2013 Product data sheet 1. Product profile 1.1 General description 500 mA PNP general-purpose transistors in a leadless ultra small DFN1010D-3 SOT1215) Surface-Mounted Device (SMD) plastic package with visible


    Original     		PDF BC807-25QA; BC807-40QA DFN1010D-3 OT1215) BC807-25QA BC817-25QA BC817-40QA bc807

    Untitled

    Abstract: No abstract text available
    Text: DF N1 01 0D -3 PMXB56EN 30 V, N-channel Trench MOSFET 25 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench


    Original     		PDF PMXB56EN DFN1010D-3 OT1215)