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    DFN 3.3X3.3 Search Results

    DFN 3.3X3.3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    ISL6720AARZ Renesas Electronics Corporation 100V Triple Linear Bias Supply, DFN, /Tube Visit Renesas Electronics Corporation

    DFN 3.3X3.3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LPS3015-472MLB

    Abstract: GRM21BR60J106KE19L ISL9105 ISL9105IRZ-T TB379 CDRH2D14NP-3R3
    Text: ISL9105 Data Sheet February 13, 2007 FN6415.1 600mA Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator Features ISL9105 is a 600mA, 1.6MHz step-down regulator that is ideal for powering low-voltage microprocessors in handheld devices such as PDAs and cellular phones. It is optimized


    Original     		PDF ISL9105 FN6415 600mA ISL9105 600mA, 600mA. LPS3015-472MLB GRM21BR60J106KE19L ISL9105IRZ-T TB379 CDRH2D14NP-3R3

    Untitled

    Abstract: No abstract text available
    Text: ISL9105 Data Sheet December 21, 2006 FN6415.0 600mA Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator Features ISL9105 is a 600mA, 1.6MHz step-down regulator that is ideal for powering low-voltage microprocessors in handheld devices such as PDAs and cellular phones. It is optimized


    Original     		PDF ISL9105 FN6415 600mA ISL9105 600mA, 600mA.

    IGBT 60A spice model

    Abstract: 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola
    Text: Semiconductor Packages and Case Outlines Reference Manual CASERM/D Rev. 2, September−2006 SCILLC, 2006 Previous Edition © 2003 “All Rights Reserved’’ CASERM ChipFET is a trademark of Vishay Siliconix. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.


    Original     		PDF September-2006 IGBT 60A spice model 8 pin ic 3842 motorola an569 thermal IR 948P 0.65mm pitch BGA socket bt 2323 DFN 3.3X3.3 HTC Korea SPICE thyristor model 527 MOSFET TRANSISTOR motorola

    ER5312D

    Abstract: EN5366QI
    Text: ER5312D ENPIRION 1A Voltage Mode Synchronous Buck PWM DC-DC Converter March 2007 RoHS Compliant Product Overview The ER5312D provides the benefits of high switching frequency with the flexibility to optimize the design for footprint or efficiency. The 4 MHz operation allows for the use of a tiny


    Original     		PDF ER5312D ER5312D EN5366QI

    Untitled

    Abstract: No abstract text available
    Text: AON7510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 75A ID (at VGS=10V)


    Original     		PDF AON7510

    Untitled

    Abstract: No abstract text available
    Text: AON7292 100V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS MV technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application


    Original     		PDF AON7292

    Untitled

    Abstract: No abstract text available
    Text: AON7254 150V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS MV technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application


    Original     		PDF AON7254

    2088AB* led matrix

    Abstract: led matrix 2088ab 2088AB led matrix led matrix 8x8 mini circuits 2088AB matrix 2088ab Ultrasonic humidifier circuit torque settings for metric cap head screws TRANSISTOR C 6090 EQUIVALENT CV 7311
    Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 3, May−2006 SCILLC, 2006 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of


    Original     		PDF May-2006 2088AB* led matrix led matrix 2088ab 2088AB led matrix led matrix 8x8 mini circuits 2088AB matrix 2088ab Ultrasonic humidifier circuit torque settings for metric cap head screws TRANSISTOR C 6090 EQUIVALENT CV 7311

    matrix 2088ab

    Abstract: 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB
    Text: Soldering and Mounting Techniques Reference Manual SOLDERRM/D Rev. 5, January−2007 SCILLC, 2007 “All Rights Reserved” SOLDERRM FULLPAK, ICePAK, MicroIntegration, MicroLeadless, MOSORB, MiniMOSORB, and POWERTAP are trademarks of Semiconductor Components Industries, LLC SCILLC . Cho−Therm is a registered trademark of Chromerics, Inc. Grafoil is a registered trademark of


    Original     		PDF January-2007 matrix 2088ab 2088AB led matrix torque settings chart for metric stainless bolts led matrix 2088ab 2088AB* led matrix PHASE CONTROL THYRISTOR MODULE TT 56 N SIL-PAD to-247 Ultrasonic humidifier circuit full wave BRIDGE RECTIFIER 1044 2088AB

    DFN 3.3X3.3

    Abstract: No abstract text available
    Text: MCP87055 High-Speed N-Channel Power MOSFET Features Description • Low Drain-to-Source On Resistance RDS(ON • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation


    Original     		PDF MCP87055 MCP87055 Effici6-3-5778-366 DS22323B-page DFN 3.3X3.3

    MIPW3226D0R9M

    Abstract: EN5366QI
    Text: EQ5382D/EQ5362D/EQ5352D ENPIRION Voltage Mode Synchronous Buck PWM DC-DC Converter November 2006 RoHS Compliant Product Overview EQ5352DI Efficeincy -vs- Load Current VIN = 3.6V 100 3.3V EQ53X2D product family provides the benefits of high switching frequency with the flexibility to


    Original     		PDF EQ5382D/EQ5362D/EQ5352D EQ5352DI EQ53X2D MIPW3226D0R9M EN5366QI

    001PD

    Abstract: DFN 3.3X3.3
    Text: AON7418 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


    Original     		PDF AON7418 001PD DFN 3.3X3.3

    Untitled

    Abstract: No abstract text available
    Text: AON7418 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL


    Original     		PDF AON7418

    Untitled

    Abstract: No abstract text available
    Text: AON7760 25V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant


    Original     		PDF AON7760

    Untitled

    Abstract: No abstract text available
    Text: AON7758 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant


    Original     		PDF AON7758

    AON7405

    Abstract: No abstract text available
    Text: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. ID (at VGS= -10V) -30V


    Original     		PDF AON7405 AON7405

    Untitled

    Abstract: No abstract text available
    Text: AON7280 80V N-Channel MOSFET General Description Product Summary The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely


    Original     		PDF AON7280 AON7280

    DFN 3.3X3.3

    Abstract: No abstract text available
    Text: AON7210 30V N-Channel MOSFET General Description Product Summary The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON


    Original     		PDF AON7210 AON7210 DFN 3.3X3.3

    AON7423

    Abstract: 33X3 DFN 3.3X3.3 20V P-Channel Power MOSFET 500A
    Text: AON7423 20V P-Channel MOSFET General Description Product Summary The AON7423 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON7423 AON7423 33X3 DFN 3.3X3.3 20V P-Channel Power MOSFET 500A

    AON7428

    Abstract: DFN 3.3X3.3
    Text: AON7428 30V N-Channel MOSFET General Description Product Summary The AON7428 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS RDS(ON) (at VGS=10V)


    Original     		PDF AON7428 AON7428 DFN 3.3X3.3

    Untitled

    Abstract: No abstract text available
    Text: AON7242 40V N-Channel MOSFET General Description Product Summary The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


    Original     		PDF AON7242 AON7242

    AON7405

    Abstract: 30V 20A power p MOSFET
    Text: AON7405 30V P-Channel MOSFET General Description Product Summary The AON7405 uses advanced trench technology to provide excellent RDS ON with low gate charge. This device is ideal for load switch and battery protection applications. VDS -30V -50A ID (at VGS= -10V)


    Original     		PDF AON7405 AON7405 30V 20A power p MOSFET

    AON7421

    Abstract: No abstract text available
    Text: AON7421 20V P-Channel MOSFET General Description Product Summary The AON7421 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS ON . This device is ideal for load switch and battery protection applications.


    Original     		PDF AON7421 AON7421

    Untitled

    Abstract: No abstract text available
    Text: AON7210 30V N-Channel MOSFET General Description Product Summary The AON7210 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS ON


    Original     		PDF AON7210 AON7210