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    New Try NTC-E2024DF-M8

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    DigiKey NTC-E2024DF-M8 10 1
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    New Try NTC-E1024DF-M8

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    DigiKey NTC-E1024DF-M8 5 1
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    Festo DFM-80-50-P-A-KF

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    Festo DFM-80-25-P-A-KF

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    Festo DFM-80-80-P-A-GF

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    DFM8 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DFM800NXM33-A000 Dynex Fast Recovery Diode Module Original PDF
    DFM800NXM33-A000 Dynex Fast Recovery Diode Module Preliminary Information Original PDF

    DFM8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2 bit magnitude comparator

    Abstract: dece2x4 TA194 TA688 4 bit identity comparator AO11 TA164 2-bit down counter TA161 DLM8
    Text: Accelerator Series Macro Library – Tables of Hard, Soft, and TTL Macros Hard Macros—Combinatorial Modules Function Macro Description Combinatorial Logic Module CM8 Combinational Module Full ACT 3 Logic Module Sequential Logic Module DFM8A 4-bit D-Type Flip-Flop with Multiplexed Data, active low Clear, and active


    Original     		PDF TA269 TA273 TA280 TA377 TA688 2 bit magnitude comparator dece2x4 TA194 TA688 4 bit identity comparator AO11 TA164 2-bit down counter TA161 DLM8

    u6 ek

    Abstract: b555c MMI3
    Text: =;E01 EB?>9 EF7F: D:?7J ;OLZ[XOY _ x@<C<:KI@: JKI<E>K? miii3 _ -?FKF @JFC8K@FE z@C< +Fs yjlmnjp _ 7<IF :IFJJ FI I8E;FD KLIEfFE _ /<DFM89C< =@E><I GIFF= :FM<I 8M8@C89C< z@C< +Fgs /nijoolkq _ xFL9C< 0w/ uw FLKGLK _ -8E<C DFLEK _ xw FI uw :FEKIFC _ yEM@IFED<EK8C =I@<E;CP GIF;L:K


    Original     		PDF DFM89C< u6 ek b555c MMI3

    Fast Recovery Diode Module 1800v

    Abstract: DFM800NXM33-A000 UC 3845
    Text: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V


    Original     		PDF DFM800NXM33-A000 DS5473-1 Fast Recovery Diode Module 1800v DFM800NXM33-A000 UC 3845

    UC 3845

    Abstract: Fast Recovery Diode Module 1800v DFM800NXM33-A000
    Text: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V 2.5V 800A 1600A ■ Isolated Base


    Original     		PDF DFM800NXM33-A000 DS5473-1 DFM800NXM33-A000 UC 3845 Fast Recovery Diode Module 1800v

    DFM800NXM33-A000

    Abstract: UC 3845
    Text: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V 2.5V 800A 1600A ■ Isolated Base


    Original     		PDF DFM800NXM33-A000 DS5473-1 DFM800NXM33-A000 UC 3845

    Untitled

    Abstract: No abstract text available
    Text: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating


    Original     		PDF DFM800XXM45-TS000 DS6101-1 LN30483) DFM800XXM45-TS000

    DFM800NXM33-A000

    Abstract: No abstract text available
    Text: DFM800NXM33-A000 DFM800NXM33-A000 Fast Recovery Diode Module Preliminary Information DS5473-1.3 October 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 3300V


    Original     		PDF DFM800NXM33-A000 DS5473-1 DFM800NXM33-A000

    Untitled

    Abstract: No abstract text available
    Text: DFM800NXM33-A000 Fast Recovery Diode Module Replaces DS5473-1.3 DS5473-2 December 2010 LN27861 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-A000 DS5473-1 DS5473-2 LN27861) 1600Arovided

    DFM800XXM45-TS000

    Abstract: No abstract text available
    Text: DFM800XXM45-TS000 Fast Recovery Diode Module DS6101-1 May 2013 LN30483 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating


    Original     		PDF DFM800XXM45-TS000 DS6101-1 LN30483) DFM800XXM45-TS000

    DFM800XXM45-TS001

    Abstract: No abstract text available
    Text: DFM800XXM45-TS001 Fast Recovery Diode Module Replaces DS6096-1 DS6096-2 October 2013 LN31066 FEATURES KEY PARAMETERS • VRRM VF IF IFM 10.2kV Isolation Package  Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800XXM45-TS001 DS6096-1 DS6096-2 LN31066) 16rovided DFM800XXM45-TS001

    Untitled

    Abstract: No abstract text available
    Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-F000 DS5911-1 DS5911-2 LN27787)

    Untitled

    Abstract: No abstract text available
    Text: DFM800XXM45-TS001 Fast Recovery Diode Module DS6096-1 April 2013 LN30427 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating


    Original     		PDF DFM800XXM45-TS001 DS6096-1 LN30427) DFM800rovided

    DFM800NXM33-F000

    Abstract: DFM800NXM33-F
    Text: DFM800NXM33-F000 Fast Recovery Diode Module Replaces DS5911-1.0 DS5911-2 December 2010 LN27787 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-F000 DS5911-1 DS5911-2 LN27787) DFM800NXM33-F000 DFM800NXM33-F

    DFM800NXM33-F000

    Abstract: No abstract text available
    Text: DFM800NXM33-F000 Fast Recovery Diode Module DS5911-1.0 March 2007 LN25213 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1600A Rating


    Original     		PDF DFM800NXM33-F000 DS5911-1 LN25213) DFM800NXM33-F000

    Untitled

    Abstract: No abstract text available
    Text: DFM800XXM45-TS001 Fast Recovery Diode Module DS6096-1 April 2013 LN30427 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates  Dual Diodes Can Be Paralleled For 1600A Rating


    Original     		PDF DFM800XXM45-TS001 DS6096-1 LN30427) DFM800rovided

    DFM800NXM33-A000

    Abstract: No abstract text available
    Text: DFM800NXM33-A000 Fast Recovery Diode Module Replaces DS5473-1.3 DS5473-2 December 2010 LN27861 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates


    Original     		PDF DFM800NXM33-A000 DS5473-1 DS5473-2 LN27861) 1600Arovided DFM800NXM33-A000

    Actel A1425

    Abstract: DLM8 pin diagram for all 74 series ttl gates A1425 A1425A-3 A1460A-3 177-Pin
    Text: N EW! –3 S peeds ACT 3 Field Programmable Gate Arrays Features • Highly Predictable Performance with 100% Automatic Placement and Routing • 7.5 ns Clock-to-Output Times • Up to 250 MHz On-Chip Performance • Up to 228 User-Programmable I/O Pins


    Original     		PDF 20-pin Actel A1425 DLM8 pin diagram for all 74 series ttl gates A1425 A1425A-3 A1460A-3 177-Pin

    A1425A-3

    Abstract: No abstract text available
    Text: ACT3PCI.fm v6 Page 1 Tuesday, August 12, 1997 11:17 AM Accelerator Series FPGAs: ACT 3 PCI-Compliant Family F e atures • Up to 10,000 Gate Array Equivalent Gates. • Up to 250 MHz On-Chip Performance. • 9.0 ns Clock-to-Output. • Up to 1,153 Dedicated Flip-Flops.


    Original     		PDF A1460B A1425A-3

    Tag 225-600

    Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes

    54SXA

    Abstract: No abstract text available
    Text: Macro Library Guide July 2000 For more information about Actel’s products, call 888-99-ACTEL or visit our Web site at http://www.actel.com Actel Corporation • 955 East Arques Avenue • Sunnyvale, CA USA 94086 U.S. Toll Free Line: 888-99-ACTEL • Customer Service: 408-739-1010 • Customer Service FAX: 408-522-8044


    Original     		PDF 888-99-ACTEL 888-99-ACTEL 54SXA

    kpb 307

    Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
    Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half


    Original     		PDF DS5766-4. kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor

    3N211

    Abstract: No abstract text available
    Text: MOTOROLA Î SC 34 -CDIODES/OPTOJ 6 3 6 7 2 5 5 MOTOROLA SC • . . »FJt.Bt.7E5S QG3ADM3 1 34C CDIODES/OPTO 38043 r- h TT -•*' ~ t S’ FIELD-EFFECT TRANSISTORS DICE continued) 3C211 DIE NO. LINE SOURCE — DFM881 This die provides performance equal to or better than that of


    OCR Scan     		PDF DFM881 3N211 3N212 3N213 3C211

    mpf131

    Abstract: MFE131 3N201 3N210 3n207 MPF132 3N201 APPLICATIONS 3N209 3N208 3N204
    Text: 34 MOTOROLA SC -CDIODES/OPTO} ! 6367255 MOTOROLA SC DE |t.3b7S55 0030045 CD I O D E S / O P T O 3 ^c 3 8 0 42 d T - ?/*• ?. F IE L D -E F F E C T TR A N SISTO R S D ICE continued) DIE NO. 3C201 LINE SOURCE — DFM877 This die provides performance equal to or better than that of


    OCR Scan     		PDF 3b7S55 3C201 DFM877 3N201 3N202 3N210* MFE130 MFE131 3N203 3N204 mpf131 MFE131 3N201 3N210 3n207 MPF132 3N201 APPLICATIONS 3N209 3N208

    SiS 486 schematic

    Abstract: No abstract text available
    Text: Accelerator Series FPGAs - ACT 3 Family Features • Replaces up to twenty 32 macro-cell CPLDs • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent P L IJ Gates • Replaces up to one hundred 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic


    OCR Scan     		PDF 20-Pin A14100 SiS 486 schematic