DF2S18CT Search Results

Contextual Info: DF2S18CT ESD保護用ダイオード シリコンエピタキシャルプレーナ形 DF2S18CT 1. 用途 • ESD保護用 注意:本製品はESD保護用ダイオードであり, ESD保護用以外の用途 定電圧ダイオード用途を含むがこれに限らない

Contextual Info: DF2S18CT TOSHIBA Diodes for Protecting against ESD DF2S18CT Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristic Symbol Rating Power dissipation P 150* mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range

Contextual Info: DF2S18CT ESD Protection Diodes Silicon Epitaxial Planar DF2S18CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S18CT TOSHIBA Diodes for Protecting against ESD DF2S18CT Product for Use Only as Protection against Electrostatic Discharge ESD . Unit: mm * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation,

Contextual Info: DF2S18CT ESD Protection Diodes Silicon Epitaxial Planar DF2S18CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.

Contextual Info: DF2S18CT 東芝ESD保護用ダイオード DF2S18CT 単位: mm ○ ESD 保護用 絶対最大定格 Ta = 25°C 記号 定格 単位 許 容 損 失 P 150* mW 接 合 温 度 Tj 150 °C 保 存 温 度 Tstg −55~150 °C *:基板付け時(ガラスエポキシ基板面積: 20mmx20mm､

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

DF2S3.6SC

Abstract: CRH02 CRG09 CMG07 1SS416CT CRG07 CMS19 CMZ24 HN2D01JE JDV2S10FS
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

smd diode Lz zener

Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A