DF 9 DIODE Search Results

Contextual Info: SKYPER 32PRO R . Absolute Maximum Ratings Symbol Conditions ¥V&->5¥V&66>5d&' < '/0. $&) A')/7 9&/(,2. )35>,37 1-)'( 052-,/ 9&/(,2. E?52+G 1-)'( 052-,/ 9&/(,2. E_&%G ]'()'( ).,; *'33.-( ]'()'( ,9.3,2. *'33.-( >,DF 0%5(*+5-2 63.a'.-*7 H&//.*(&3 .>5(.3 9&/(,2. 0.-0. ,*3&00

transistor 16933

Abstract: 16933 Transistor
Contextual Info: TOSHIBA {DISCRETE/OPTO} dF I tG ^ S O 99D 16932 9097250 TOSHIBA DISCRETE/OPTO Gült^E S ï~~ DT-?,9-l3 TOSHIBA FIELD EFFECT TRANSISTOR TOSHIBA SEMICONDUCTOR S 2 3 7 0 SILICON N CHANNEL MOS TYPE (7T-M0SI ) TECHNICAL DATA INDUSTRIAL APPLICATIONS _ Unit in aim

OA 91 diode

Abstract: IRF220 IRF221 IRF222 5CH2 IRF223 8d050
Contextual Info: 7964142 SAMSUNG hfl DE I S E M ICONDUCTOR T T t i Ml MS □□□S Df l ' ì 0 5 0 8 9 _ d T - 3 ? 9 8 D I N C _ N-CHANNEL POWER MOSFETS 1 IRF220/221/222/223 FEATURES Low R d S o i i Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

fld3c2pj

Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Contextual Info: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o

45215

Abstract: 452 rectifier 02DF 10MSA Diodes de redressement df 652
Contextual Info: y fast recovery rectifier diodes > 100 A diodes de redressement rapide > 100 A THOMSON-CSF Types •o Vrrm ■f s m 10 ms vF A <V) (A) (V) / if max (A) lR m a* / V rrm Q r mai; @ Tj max (mA) Case IfiC) lF = 50 A Tj = 125°C 270 A / T case = 9 5 °C DF 252

A476

Abstract: 6937A
Contextual Info: & ' "  ,F86ADB5F *8 7#A*9=A "#"A&$>&DF#$A(%#DFA(#FD+!+35 693?=7"A(+A%+>'$#A#/F#!!#D(A2379:8A&D$A!+6A3&(# F&%3#-A7#AF+0!#0#D(&%5A693?=7"A0&5A1#A "#$ 'DA,E1%'$3#9A5D>#%(#%"A&D$A+(#%

THT bsc 25

Abstract: n3av
Contextual Info: MOTOROLA SC -CLOGICJ- Tô 76367252 MOTOROLA SC LOGIC dF J b3b72SE 007^430 980 79438 fl D "p- 9 3 -2 / MC14001UB ( g ) Quad 2-Input NOR Gate MOTOROLA MC14002UB Dual 4-Input NOR Gate MC14011UB Quad 2-Input NAND Gate - . UB-SUFFIX SERIES CMOS GATES MC14012UB

SN75069

Abstract: SN75068 S76266
Contextual Info: TEXAS INSTR ÌLI N/I NTF O 11 8961724 TEXAS IN STR dF | öTblVEM 00757^0 a | 91D 75798 L I N / INTFC D SN7506B, SN75069 QUADRUPLE HIGH-CURRENT DARLINGTON SWITCHES D 2 62 1, DE C EM B ER 1 9 7 9 - R E V IS E D FE B RU A RY 1987 NE DUAL-IN-LINE PACKAGE Output Collector Current. . . 1.5 A Max

Contextual Info: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS

DF fuse

Contextual Info: IB IL 24 PWR IN/2F-DF-2MBD Inline Power Terminal With Fuse and Diagnostics Data Sheet 6845A 6 3 9 4 A 0 0 1 09/2002 This data sheet is only valid in association with the "Configuring and Installing the INTERBUS Inline Product Range" User Manual IB IL SYS PRO UM E.

SS-3002

Abstract: SS300-2 SS3002 silicon diode load SILICON SENSORS Silicon Sensors, Inc
Contextual Info: 8253922 SILICON SENSORS INC SILICON SENSORS INC — i m ISII lisi ^ 75C 003^0 D7W/- dF 00D034Q 0 | ö 2S3T22 SILICON SENSORS, INC. Highw ay 1 8 East D odgeville, Wisconsin 5 3 5 3 3 Telephone: 6 0 8 9 3 5 -2 7 0 7 8253922 SILICON SENSORS INC SILICON SENSORS INC

5-6605403-8

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. AA DIST R E VIS IO N S 22 LTR DESCRIPTION B MECHANICAL: PER ECO—0 5 —0 0 6 1 2 8 DATE DWN APVD 2 9 JU L 2 0 0 5 CG DF

DKV6520B

Abstract: CKV2020-36 DKV6522D DKV6520 DKV6520A DKV6525 DKV6525A DKV6525B DKV6520C okv652
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR ALPHA IN»/ SEM ICON DU CT OR 03E 03 dF 00490 D T ~0_1 - 9 § 0 S û S4H3 □ ODQM'ï D fi | Hyperabrupt Tuning Varactors, DKV6520 Series Features • • • • High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts

MLED94

Abstract: SILICON DICE motorola
Contextual Info: MOTOROLA SC ÍDIODES/OPTO} Ï4 DF|b3t,7ESS OOBfllhfl 7 | 1 i 8 3 6 7 2 5 5 M O T O R O L A SC CDIODES/OPTO 3^c 3 8 1 6 8 SILICON OPTOELECTRONIC DICE continued) D T - 41 -1 9 MLDC3 DIE NO. LINE SOURCE — DOL93 This die provides performance equal to or better than that

Contextual Info: SPEC NO: 036-0152 PART NO: DPS150067U-P5-DF C U I STACK UNIT: mm PAGE NO: 1 of 4 DATE: Q1/11/9Î All information contained herein applies only to the above listed part number. Other versions of this part number with electrical or mechanical variations are available. Contact CUI Stack for further assistance. 9615 SW Allen Blvd., Ste. 103, Beaverton OR 97005

Contextual Info: N E C ELE CTR ON IC S INC 6 4 2 7 5 2 5 N E C E L E C T R O N I C S INC Tfl MOS dF | bi»57SaS OOITDHI S | ~ 9 8 D 19031 D j FIELD EFFECT TRANSISTOR ELECTRON DEVICE \ _ FAST SWITCHING P-CHANNEL S IL IC O N POWER 2J±a2 s.o±a 2 zi FET

zc826 IC

Contextual Info: PLESSEY S E M I C O N D / D I S C R E T E T S 7 2 20 5 33 PLESSEY dF | ? 2E0SB3 95D 0 4 9 8 4 S E M I C O N D / D I S C RE TE fl D i TABLE 4 : VARIABLE CAPACITANCE TUNER DIODES HYPEBABRUPTTYPEI ! i T-oi-n Hyperabrupt tuning diodes may be used in any electronic tuning system to replace conventional tuning

2SK790

Abstract: HSO16 2SK79 1SV35
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS

LT3502A

Abstract: 1089
Contextual Info: DE M O CIR CU IT 1 08 9 Q U ICK S TA R LT3502A T G U IDE L T 3 5 02A 2.2M H z , 5 00m A , S te p -d o w n R e g u la to r in 2m m x 2m m DF N DESCRIPTION Demonstration circuit 1089 is a monolithic step-dow n DC/DC sw itching regulator featuring the LT3502A. The

IEC60825-1

Abstract: MAG45 MAG45 rj45 rj45 led mag marking code SAC
Contextual Info: I- DESCRIPTION REV PER EC OS13-0650-04 I7MAR2005 LV DF / A M A TE R IA L S: -H O U SING - TH E R M O PL A ST IC P ET P O L Y E S T E R F L A M M A B IL IT Y RATIN G UL 9 4 V -0 . -S H IE L D - .010" THICK, C26800 B R A S S P R E P L A T E D WITH 30jill\ICH MIN SE M I-BR IG H T

mag45

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVISIONS LOC DIST AA 22 LTR DESCRIPTION A REV PER EC OS13 - 0 6 5 0 - 0 4 DATE DWN APVD 17M A R 2005 LV DF/CG M ATERIALS: -HOUSING - T H E R M O P L A S T I C P ET P O L Y E S T E R F L A M M A B I L I T Y R A T I N G UL 9 4 V - 0 .

63d54

Abstract: 1e23
Contextual Info: Datas h eet 1 2333 4 4 567 8 9 69A B C D A 6E B F 69D F  B  D  68 A A  A 69 DF D  FB   3 6DDA69DABFB  6D6DFAD 12;2<+B9#368* D6D7%3AD !" %  

452 thyristor

Abstract: df diode 4120800 452 diode ESM thyristor ESM thyristor 270 ir 451 DF252 ESM diode esm diodes
Contextual Info: S G S -T H O M S O N 71C 0 | TTSTEB? Q aG 4c131 û THOMSON SEMICONDUCTORS fast recovery rectifier diodes ^ 1 0 0 A Types >o VRRM • fsm / Vf If Iß m ax / V r r m @ Tj m ax Q r max A (mA) (mC) 10 ms Case m ax (A ) (A ) (V) 250 A / T case = 8 0 °C (V )

ESM thyristor

Abstract: thyristor disc Vrrm 20000 MDF656 esm 2000 thyristor disc Vrrm 2000 mu 86 452 thyristor sgs Thomson Thyristor DFB51 DF 652
Contextual Info: / = 7 SCS-THOMSON Ä 7# GENERAL PURPOSE & INDUSTRIAL RülDg|S@II!JCT8@liîOÔËS HIGH POWER RECTIFIER DIODES & THYRISTORS > 100 A M 771 M 779 b CB-479 CB-450 FAST RECOVERY RECTIFIER DIODES Type V RRM Tj max V <°C) (A) SV 11. F (R) SV 15. F (R) 800— 2000