DESIGN WITH PIN DIODE ALPHA Search Results

APN1002

Abstract: Microwave PIN diode UHF Phase Shifter pin diodes radiation detector Design with PIN diode alpha Design with PIN diode limiter alpha phase shifter circulator pin diode PIN DIODE DRIVER CIRCUITS SMP1302-001
Contextual Info: Application Note Design With PIN Diodes APN1002 The PIN diode finds wide usage in RF, UHF and microwave circuits. It is fundamentally a device whose impedance, at these frequencies, is controlled by its DC excitation. A unique feature of the PIN diode is its ability

csb7002

Contextual Info: Low Power PIN Switching and Attenuator Diodes ALPHA IN»/ S E M I C O N D U C T O R 4flE D 0505 443 G G G 1 2 0 3 H53 • ALP ■ Features ■ ■ ■ ■ ■ Optimized for Each Type of Application Low Lifetime, Low Resistance for Small Current Drain Switches

CSM7301-01

Contextual Info: 0585443 ALPHA IND/ ^ 03 D | QSÔS4M3 00a0M3t. s| ~ , q Low Power PIN/NIP Switching and Attenuator Diodes ALPHA “ l 7 Features Optimized for Each Type of Application • Low Lifetime, Low Resistance for Small Current Drain Switches • Longer Lifetime, Low Resistance for Medium Power

Contextual Info: ALPHA IND / SEMICONDUCTOR MAE D • 0585443 DD03,2G1 DfiD ■ ALP Industry Standard PIN Diode Chips 'T -07-1 s' Features ■ ■ ■ ■ General Purpose PIN Switching Diodes Oxide/Nitride Passivated Series Resistance to 0.4 Ohms Switching Time to 5 ns Types

handling of beam lead diodes

Contextual Info: ALPHA IN»/ SEMICONDUCTOR 33E D OSÖSM43 DGOQfllM Ö • ALP P'D'7-I 5 Mesa Beam-Lead PIN Diodes Features ■ ■ ■ ■ ■ ■ ■ ■ ■ New Stronger "Full Frame" Design 8 Grams Typical Pull Strength Broad Product Line Low Capacitance: .025 pf Low Resistance: 1.7 ohm

Design of Ultra Low Dropout Voltage Boost Converter

Abstract: PIC-006 boost converter boost converter application note inductor switching mosfet ultra low power mosfet pic for pwm PWM to voltage converter
Contextual Info: Application Note PIC-006 Design of Ultra Low Dropout Voltage Boost Converter Song Liu, Alpha & Omega Semiconductor Shanghai , Ltd. Abstract In electronic systems powered by USB port, to compensate for the dropout voltage of USB wires, a boost converter is usually

handling of beam lead diodes

Abstract: DSM6363 DSM6361 Alpha Industries pin diodes
Contextual Info: ALPHA IND/ SEMICONDUCTOR 4flE P • 0565443 DDD1223 741 ■ ALP Mesa Beam-Lead PIN Diodes -r «7-i s Features ■ ■ ■ ■ ■ ■ ■ ■ ■ New Stronger "Full Frame" Design 8 Grams Typical Pull Strength Broad Product Line Low Capacitance: .025 pf Low Resistance: 1.7 ohm

la3133

Abstract: CLA3131-01
Contextual Info: ESAIphi Limiter Diodes CLA3131, CLA3132, CLA3133, CLA3134, CLA3135 Series Features Low Loss 4 kW Coarse Limiters 200 Watt Midrange Limiters 10 mW Clean-Up Limiters Chip Dimensions Description Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design

FULL WAVE mosfet RECTIFIER CIRCUITS

Abstract: 2N6394 593D RC5054 RC5054A 1mh 15A 50KHZ inductor
Contextual Info: www.fairchildsemi.com RC5054A Programmable Synchronous DC-DC Converter Controller for Low Voltage Microprocessors Features Applications • • • • • Power Supply for Pentium , Pentium Pro, PowerPC and Alpha™ Microprocessors • High-Power 5V to 3.xV DC-DC Regulators

RC5054AM

Abstract: 2N6394 593D RC5054 RC5054A
Contextual Info: www.fairchildsemi.com RC5054A Programmable Synchronous DC-DC Converter Controller for Low Voltage Microprocessors Features Applications • • • • • Power Supply for Pentium , Pentium Pro, PowerPC and Alpha™ Microprocessors • High-Power 5V to 3.xV DC-DC Regulators

DGM6767

Abstract: diode 48e
Contextual Info: ALPHA IN»/ S E M I C O N D U C T O R 48E D 0 S Ô 5 M 4 3 0 0 0 1 2 E T IbT • ALP GaAs Beam-Lead PIN Diodes 'T cn -i* Features ■ ■ ■ ■ ■ Description Fast 3 Nanosecond Switching Speed Low Forward Resistance Direct TTL Driver Compatibility Excellent Capacitance - Voltage Characteristics

CLA3132-01

Abstract: CLA3131-01 CLA3134-02 CLA3131 Design with PIN diode limiter alpha CLA3133-01 CLA3135 CLA3132-02 CLA3134-01 CLA3133
Contextual Info: E3Alpha Limiter Diodes CLA3131, CLA3132, CLA3133, CLA3134, CLA3135 Series Features Low Loss 4 kW Coarse Limiters 023-001 200 Watt Midrange Limiters 10 mW C lean-U p Limiters Chip Dimensions Description Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design

CLA3134

Abstract: CLA3132-01 CLA3133 CLA3133-03
Contextual Info: EHAlpha Limiter Diodes CLA3131, CLA3132, CLA3133, CLA3134, CLA3135 Series Features • Low Loss ■ 4 kW Coarse Limiters ■ 200 Watt Midrange Limiters ■ 10 mW Clean-Up Limiters 325-011 Chip Dimensions Description Alpha has pioneered the microwave limiter diode.

Design with PIN diode limiter alpha

Abstract: pin diode limiter 3 ghz 1 watt st 4606 microwave limiter passive low pass filter at 60 ghz CLA4603 CMB7602 4606 chip Alpha Industries pin diodes
Contextual Info: Limiter Diodes CLA Series Features Low Loss 4 kW Coarse Limiters 210 4 240 200 Watt Midrange Limiters 10 mW Clean–Up Limiters Description Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design through epitaxy to the finished device, are specifically

Contextual Info: ! 2007-05-23 Ambient Light and Proximity Sensor Umgebungslicht- und Proximity Sensor Version alpha.1 SFH 7771 Features: • Proximity sensor PS - Detection range up to 250 mm - Suitable for Emitters with 850nm.940nm - Very good performance behind dark cover

SMP1300-99

Abstract: SMP1301-05 SMP1300 SMP1300-01 SMP1301 SMP1302-01 Design with PIN diode alpha SMP1304 SMP1301-09 pin diode SMP
Contextual Info: Low Cost Surface Mount PIN Diodes SMP 1300 Series 'T -tn -is ALPHA IND/ SEMICONDUCTOR G5Ô5443 4flE D 0001243 53T IA L P Features Small Outline, Low Parasitics High Reliability Broad Frequency Range 50 MHz to 3.0 GHz Excellent Thermal Stability Wide Resistance Range

Contextual Info: AON7534 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Contextual Info: Plastic Packaged 0 Alpha Surface Mount PIN Diodes SMP1300 Series Features • Industry Standard Outlines ■ Designed for High Performance Switches & Attenuators ■ Single and Dual Diode Configurations ■ Low Inductance Designs for Microwave Applications

Contextual Info: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)

AON7810

Contextual Info: AON7810 30V General Description Dual N-Channel AlphaMOS Product Summary VDS • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 6A ID (at VGS=10V)

Contextual Info: AON7536 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V

Package

Abstract: Qg (nC) AON2810
Contextual Info: AON2810 30V Dual N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V

Contextual Info: AON7510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application VDS 30V 75A ID (at VGS=10V)