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    Untitled

    Abstract: No abstract text available
    Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT18JSF1G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef84854d35 jsf18c1gx72pz

    k4b2g1646q

    Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
    Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G1646Q 96FBGA k4b2g1646q ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA

    IS46TR

    Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V        


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 60A/AL 78-ball IS46TR IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


    Original     		PDF EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		PDF W632GG6KB W632GG6KB15I

    Untitled

    Abstract: No abstract text available
    Text: Nanya Technology Corp. DDR3 L 4Gb SDRAM NT5CB(C)512M8CN / NT5CB(C)256M16CP NT5CB(C)512M8CN / NT5CB(C)256M16CP Commercial, Industrial and Automotive DDR3(L) 4Gb SDRAM Features  Signal Integrity  JEDEC DDR3 Compliant - Configurable DS for system compatibility


    Original     		PDF 512M8CN 256M16CP DDR3L-1866

    78 ball fbga

    Abstract: 128Mx16 DDR3 DRAM 2GB 128Mx16 96BALL FBGA 78-Ball 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA
    Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V       


    Original     		PDF IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 cycles/64 cycles/32 Ref82560A/AL 78-ball 78 ball fbga DDR3 DRAM 2GB 128Mx16 96BALL FBGA 256Mx8 96-ball FBGA 96-BALL 96-ball FBGA ddr3 DDR3-1866L 78ball FBGA

    NT5CB256

    Abstract: NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8
    Text: 4Gb DDR3 SDRAM C-Die NT5CB512M8CN / NT5CB256M16CP NT5CC512M8CN / NT5CC256M16CP CAS Latency Frequency -DI/DII* -EK* -FL* DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 Min. Min. Speed Bins Units tCK Parameter Max. Max. Min. Max. Avg Clock Frequency 300 800


    Original     		PDF NT5CB512M8CN NT5CB256M16CP NT5CC512M8CN NT5CC256M16CP DDR3/L-1600-CL11 DDR3-1866-CL13 DDR3-2133-CL14 NT5CB256 NT5CC256M16CP-DI NT5CB256M16 NT5CB256m NT5CB512M8CN-DI NT5CB256M16CP-DI NT5CC512M8CN-DI NT5CC512M8CN-DII NT5CB256M16CP-EK NT5CC512M8

    MT41K512M8RH

    Abstract: 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L
    Text: 4Gb: x4, x8, x16 DDR3L-RS SDRAM Description 1.35V DDR3L-RS SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description Features • Self refresh temperature SRT • Automatic self refresh (ASR)


    Original     		PDF MT41K1G4 MT41K512M8 MT41K256M16 09005aef8488935b MT41K512M8RH 901KB MT41K256M16 MT41K512M8RH-125 256M16 A2 SMD CODE MARKING MT41K512M8RH-125M DDR3L

    MT18JSF51272PDZ-1G

    Abstract: MT18JSF25672PDZ MT18JSF25672PDZ-1G4 2403 GB 123 MT18JSF51272PDZ-1G6 MT18JSF51272PDZ
    Text: 2GB, 4GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF25672PDZ – 2GB MT18JSF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C B1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT18JSF25672PDZ MT18JSF51272PDZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef83d9afa1 MT18JSF51272PDZ-1G MT18JSF25672PDZ MT18JSF25672PDZ-1G4 2403 GB 123 MT18JSF51272PDZ-1G6 MT18JSF51272PDZ

    L9D3256M32SBG1

    Abstract: No abstract text available
    Text: L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES       Configuration: x/'06%*0HJ[[ 8 banks x/'06%*0HJ[[ 8 banks DDR3 Integrated Module [iMOD]: VDD=VDD4 999


    Original     		PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M DDR3-1333 LDS-L9D3xxxM32SBG1 L9D3256M32SBG2I107 L9D3256M32SBG1

    DDR3 LRDIMM

    Abstract: MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200
    Text: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge


    Original     		PDF 240-Pin MT72JSZS4G72LZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t08-368-3900 09005aef83b62686 DDR3 LRDIMM MT72JSZS4G72LZ-1G9 MT72JSZS4G72LZ-1G9E2A7 DDR3 DIMM SPD LRDIMM LRDIMM TSE-200

    MT41K256M8DA

    Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef84bd8f53 MT41K256M8DA MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K

    MT8JTF51264

    Abstract: MT8JTF51264AZ MT8JTF512 DDR3 udimm jedec MT8JTF51264A
    Text: 1GB, 2GB, 4GB x64, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT8JTF12864AZ – 1GB MT8JTF25664AZ – 2GB MT8JTF51264AZ – 4GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C A) • DDR3 functionality and operations supported as defined in the component data sheet


    Original     		PDF 240-Pin MT8JTF12864AZ MT8JTF25664AZ MT8JTF51264AZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 MT8JTF51264 MT8JTF51264AZ MT8JTF512 DDR3 udimm jedec MT8JTF51264A

    TA 7698 AP

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D3256M32SBG1 L9D3512M32SBG1 8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module Benefits FEATURES " " " " " " Configuration: "‚"N;F5478O54UDI3<"54Ogi"z"54"z" 8 banks ‚"N;F5734O54UDI3<"86Ogi"z"54"z" 8 banks DDR3 Integrated Module [iMOD]:


    Original     		PDF L9D3256M32SBG1 L9D3512M32SBG1 256-512M F5478O54UDI3< 54Ogi F5734O54UDI3< 86Ogi 3057X /202897X1-203X TA 7698 AP

    K4B4G0846C

    Abstract: K4B4G0446C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866
    Text: Rev. 1.0, Apr. 2012 K4B4G0446C K4B4G0846C 4Gb C-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B4G0446C K4B4G0846C 78FBGA K4B4G0846C K4B4G0846C-BCMA K4B4G0446C-BCK0 DDR3-1866

    MICRON ddr3

    Abstract: A-225 DDR3 1gb dimm
    Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef826aaadc MICRON ddr3 A-225 DDR3 1gb dimm

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: M392B5670GB0-CF8
    Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC M392B5670GB0-CF8

    K4B2G0846D

    Abstract: K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D K4B2G0446D-HCH9
    Text: Rev. 1.1, Sep. 2010 K4B2G0446D K4B2G0846D 2Gb D-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4B2G0446D K4B2G0846D 78FBGA K4B2G0846D K4B2G0846D-HCK0 k4b2g0846 K4B2G0846D-HCMA K4B2G0446D-HCH9

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64

    LRDIMM SPD

    Abstract: Micron LRDIMM LRDIMM
    Text: 32GB x72, ECC, QR 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM (MO-269 RC/C) • 240-pin, load-reduced dual in-line memory module (LRDIMM) • Memory buffer (MB) isolates DRAM interface from card edge


    Original     		PDF 240-Pin MT72JSZS4G72LZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 t368-3900 09005aef83b62686 LRDIMM SPD Micron LRDIMM LRDIMM

    MT9JSF25672AZ-2G1

    Abstract: micron ddr3 2133 MT4J128M8
    Text: 1GB, 2GB x72, ECC, SR 240-Pin DDR3 UDIMM Features DDR3 SDRAM UDIMM MT9JSF12872AZ – 1GB MT9JSF25672AZ – 2GB Features Figure 1: 240-Pin UDIMM (MO-269 R/C D1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, unbuffered dual in-line memory module


    Original     		PDF 240-Pin MT9JSF12872AZ MT9JSF25672AZ 240-pin, PC3-17000, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 MT9JSF25672AZ-2G1 micron ddr3 2133 MT4J128M8

    MT36JSF2G72PZ-1G4 SPD

    Abstract: No abstract text available
    Text: 16GB x72, ECC, DR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT36JSF2G72PZ – 16GB Features Figure 1: 240-Pin RDIMM (R/C J1) • DDR3 functionality and operations supported as defined in the component data sheet • 240-pin, registered dual in-line memory module


    Original     		PDF 240-Pin MT36JSF2G72PZ 240-pin, PC3-14900, PC3-12800, PC3-10600, PC3-8500, PC3-6400 09005aef846f3cd1 jsf36c2gx72pz MT36JSF2G72PZ-1G4 SPD