Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
|
Original
|
M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4GB x72, ECC, DR 240-Pin 1.35V DDR3L VLP RDIMM Features 1.35V DDR3L SDRAM VLP RDIMM MT18KDF51272PDZ – 4GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C L) • DDR3L functionality and operations supported as defined in the component data sheet • 240-pin, very low profile, 18.75mm, registered dual
|
Original
|
240-Pin
MT18KDF51272PDZ
240-pin,
PC3-12800,
PC3-10600,
PC3-8500,
PC3-6400
09005aef83aa70c0
kdf18c512x72pdz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 8GB x72, ECC, SR 240-Pin DDR3 RDIMM Features DDR3 SDRAM RDIMM MT18JSF1G72PZ – 8GB Features Figure 1: 240-Pin RDIMM (MO-269 R/C C2) • DDR3 functionality and operations supported as per the component data sheet • 240-pin, registered dual in-line memory module
|
Original
|
240-Pin
MT18JSF1G72PZ
240-pin,
PC3-14900,
PC3-12800,
PC3-10600,
PC3-8500,
PC3-6400
09005aef84854d35
jsf18c1gx72pz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:
|
Original
|
M2S1G64CBH4B5P
M2S2G64CB88B5N
M2S4G64CB8HB5N
PC3-8500
PC3-10600
PC3-12800
DDR3-1066/1333/1600
128Mx16
256Mx8
|
PDF
|
NT1GC72B89A0NF
Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Text: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency
|
Original
|
NT1GC72B89A0NF
NT2GC72B8PA0NF
NT1GC72B89A1NF
NT2GC72B8PA1NF
PC3-8500
PC3-10600
DDR3-1066/1333
128Mx8
PC3-8500
nanya 2gb DDR3 DIMM
NT2GC72B8PA0NF-CG
ddr3 PCB footprint
NT2GC72B8PA0NF
Nanya DDR3
DDR3 DIMM footprint
DDR3 udimm jedec
PC3-10600
|
PDF
|
IMX6DQ6SDLSRM
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.3, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
1080p
64-bit
DDR3/LVDDR3/LPDDR2-1066
IMX6DQ6SDLSRM
|
PDF
|
IMX6DQ6SDLSRM
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 2.3, 07/2013 MCIMX6QxAxxxxC MCIMX6DxAxxxxC i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 240PIN DDR3 1066 ECC UDIMM 1024MB With 128Mx8 CL7 TS128MLK72V1U Description Placement The TS128MLK72V1U is a 128M x 72bits DDR3-1066 ECC Unbuffered-DIMM. The TS128MLK72V1U consists of 9pcs 128Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed
|
Original
|
240PIN
1024MB
128Mx8
TS128MLK72V1U
TS128MLK72V1U
72bits
DDR3-1066
128Mx8bits
240-pin
|
PDF
|
TE32882E
Abstract: DDR3 DIMM pinout TE32882 DDR3 pcb layout DDR3 sdram pcb layout guidelines SSTE32882 dimm pcb layout DDR3 DIMM 240 pinout
Text: SN74SSQE32882 www.ti.com . SCAS857A – MARCH 2008 – REVISED OCTOBER 2008 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS PARITY TEST
|
Original
|
SN74SSQE32882
SCAS857A
28-BIT
56-BIT
SSTE32882
TE32882E
DDR3 DIMM pinout
TE32882
DDR3 pcb layout
DDR3 sdram pcb layout guidelines
dimm pcb layout
DDR3 DIMM 240 pinout
|
PDF
|
k4b2g1646q
Abstract: ddr3 2133 K4B2G1646Q-BCK0 K4B2G1646Q-BCMA
Text: Rev. 1.03, Mar. 2014 K4B2G1646Q 2Gb Q-die DDR3 SDRAM Only x16 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
|
Original
|
K4B2G1646Q
96FBGA
k4b2g1646q
ddr3 2133
K4B2G1646Q-BCK0
K4B2G1646Q-BCMA
|
PDF
|
IS46TR
Abstract: IS43TR82560A DDR3 DRAM 2GB 128Mx16 96BALL FBGA "2Gb DDR3 SDRAM"
Text: IS43/46TR16128A/AL, IS43/46TR82560A/AL 256Mx8, 128Mx16 2Gb DDR3 SDRAM ADVANCED INFORMATION MAY 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
|
Original
|
IS43/46TR16128A/AL,
IS43/46TR82560A/AL
256Mx8,
128Mx16
cycles/64
cycles/32
60A/AL
78-ball
IS46TR
IS43TR82560A
DDR3 DRAM 2GB 128Mx16 96BALL FBGA
"2Gb DDR3 SDRAM"
|
PDF
|
SSTL-15
Abstract: 204 pin so-DIMM DDR3 connector SSTL15 256Mx8 sstl_15 204Pin SODIMM ddr3 204 DDR3-1066 MODULE MEMORY DDR3 DDR3 Connector Specification
Text: Memory Product Specification DDR3-1066 SO-DIMM Description The Module is DDR3-1066 CL7 Small Outline Memory module. The Module density from 1GB to 4GB, it consists it consists 128M/256Mx8 bit DDR3-1066MHz Synchronous DRAMs in FBGA packages, Memory Module intented for mounting into 204-pin edge connector sockets.
|
Original
|
DDR3-1066
128M/256Mx8
DDR3-1066MHz
204-pin
1066Mbps
8500MB/s
SSTL-15
204 pin so-DIMM DDR3 connector
SSTL15
256Mx8
sstl_15
204Pin
SODIMM ddr3 204
MODULE MEMORY DDR3
DDR3 Connector Specification
|
PDF
|
sony cmos sensor imx 117
Abstract: sony IMX 117 imx 117 sensor sony cmos sensor imx 174 sony IMX 135 sony CMOS sensor imx 135 225/sony cmos sensor imx IMX 206 imx 117
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 3, 03/2014 MCIMX6QxAxxxxC MCIMX6QxAxxxxD MCIMX6DxAxxxxC MCIMX6DxAxxxxD i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of
|
Original
|
VL41D1G63B-K0/K9/F8S
1Gx72
204-PIN
VL41D1G63B
512Mx8
204-pin
204-pin,
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL33B1K68F-K0/K9/F8/E7S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM ULP ECC REGISTERED DIMM 240-PIN Description The VL33B1K68F is a 1Gx72 DDR3 SDRAM high density RDIMM. This memory module is dual rank, consists of eighteen stacked CMOS 1Gx4 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
VL33B1K68F-K0/K9/F8/E7S
1Gx72
240-PIN
VL33B1K68F
28-bit
240-pin
240-pin,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.1, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
1080p
64-bit
DDR3/LVDDR3/LPDDR2-1066
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL41D5763B-K0/K9/F8S REV: 1.0 General Information 2GB 256Mx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D5763B is a 256Mx72 DDR3 SDRAM high density SO-UDIMM. This single rank memory module consists
|
Original
|
VL41D5763B-K0/K9/F8S
256Mx72
204-PIN
VL41D5763B
256Mx8
204-pin
204-pin,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered
|
Original
|
VL43B1G63A-K0/K9/F8/E7S
1Gx72
204-PIN
VL43B1G63A
512Mx8
28-bit
204-pin
DDR3-800)
|
PDF
|
sony cmos sensor imx 174
Abstract: Sony "IMX 175" CMOS
Text: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 2.1, 07/2013 MCIMX6QxAxxxxC MCIMX6DxAxxxxC i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information
|
Original
|
|
PDF
|
micron ddr3
Abstract: DDR3 timing diagram DDR3 model verilog codes Verilog DDR3 memory model micron memory model for ddr3 MT41J128M8 Verilog DDR memory model DDR3 "application note" DDR3 DQ flip flop IC
Text: Maxim > Design Support > App Notes > T/E Carrier and Packetized > APP 5120 Keywords: DDR1, DDR3, jitter, buffer, TDMoP, TDM over packet, DDR, SDRAM, PDV, PSN, double data rate APPLICATION NOTE 5120 Aug 26, 2011 Using a DDR3 Memory Module with the DS34S132
|
Original
|
DS34S132
DS34S132,
32-point
DS34S132
256ms
32-port
com/an5120
micron ddr3
DDR3 timing diagram
DDR3 model verilog codes
Verilog DDR3 memory model
micron memory model for ddr3
MT41J128M8
Verilog DDR memory model
DDR3 "application note"
DDR3
DQ flip flop IC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: W632GU6KB 16M 8 BANKS 16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
W632GU6KB
|
PDF
|
IMSH1GS14A1F1C
Abstract: 03A1F1C IMSH2GS13A1F1C-10F pc3.10F
Text: December 2008 IMSH1GS14A1F1C T IMSH2GS13A1F1C(T) 204-Pin Small-Outlined Dual-In-Line Memory Modules 1-GByte and 2-GByte DDR3 SDRAM EU RoHS compliant Advance Internet Data Sheet Rev. 0.65 Advance Internet Data Sheet IMSH[1G/2G]S1[3/4]A1F1C(T) DDR3 SO-DIMM Modules
|
Original
|
IMSH1GS14A1F1C
IMSH2GS13A1F1C
204-Pin
08D/08E]
IMSH2GS13A1F1CT16H.
03A1F1C
IMSH2GS13A1F1C-10F
pc3.10F
|
PDF
|
NT5CB64M16AP-CF
Abstract: nt5cb64m16 NT5CB64M16AP-CG NT5CB64M16AP nanya NT5CB64M16AP NT5CB64m NT5CB64M16AP-BE nt5cb64m16ap-dh MPR 20 20 CF RESISTOR NT5CB64M16AP-AC
Text: 1Gb DDR3 SDRAM A-Die NT5CB256M4AN / NT5CB128M8AN / NT5CB64M16AP Feature Write Leveling 1.5V ± 0.075V JEDEC Standard Power Supply OCD Calibration 8 Internal memory banks (BA0- BA2) Dynamic ODT (Rtt_Nom & Rtt_WR) Differential clock input (CK, )
|
Original
|
NT5CB256M4AN
NT5CB128M8AN
NT5CB64M16AP
60-Ball
84-Ball
NT5CB64M16AP-CF
nt5cb64m16
NT5CB64M16AP-CG
NT5CB64M16AP
nanya NT5CB64M16AP
NT5CB64m
NT5CB64M16AP-BE
nt5cb64m16ap-dh
MPR 20 20 CF RESISTOR
NT5CB64M16AP-AC
|
PDF
|
W631GG6KB-12
Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
Text: W631GG6KB 8M 8 BANKS 16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5
|
Original
|
W631GG6KB
W631GG6KB-12
W631GG6KB-15
W631GG6KB15A
DDR3 DIMM SPD JEDEC
24si
9x13
W631GG6KB15K
w631gg6k
W631GG6KB12I
W631GG6KB-15I
|
PDF
|
