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    DDR3 SODIMM 4GB SAMSUNG Search Results

    DDR3 SODIMM 4GB SAMSUNG Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    TS3DDR3812RUAR
    Texas Instruments 12-channel, 1:2 MUX & DEMUX switch for DDR3 applications 42-WQFN -40 to 85 Visit Texas Instruments Buy

    DDR3 SODIMM 4GB SAMSUNG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MIL-I-46058C

    Abstract: PC3-10600 204 pin so-DIMM DDR3 connector DDR3 sodimm 4gb samsung
    Contextual Info: Product Specifications PART NO: VL47B5263Z-R9S/R8S/R7S-HS REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM HEAT SPREADER AND CONFORMAL COATING Description: The VL47B5263Z is a 512M X 64 DDR3 SDRAM high density SODIMM. This memory module


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    VL47B5263Z-R9S/R8S/R7S-HS 512MX64 VL47B5263Z 256Mx8 204-pin 204-pin, MIL-I-46058C PC3-10600 204 pin so-DIMM DDR3 connector DDR3 sodimm 4gb samsung PDF

    DDR3 soDIMM pinout 204 pins

    Abstract: DDR3 SO-DIMM pinout DDR3-1066 DDR3-1333 PC3-10600 4GB 512MX64 DDR3 SDRAM MODULE DDR3 soDIMM 240 pinout
    Contextual Info: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists


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    VL47B5463E-K9/F8/E7S 512Mx64 204-PIN VL47B5463E 512Mx8 204-pin 204-pin, DDR3 soDIMM pinout 204 pins DDR3 SO-DIMM pinout DDR3-1066 DDR3-1333 PC3-10600 4GB 512MX64 DDR3 SDRAM MODULE DDR3 soDIMM 240 pinout PDF

    Contextual Info: Product Specifications PART NO.: VL47B5463E-K9/F8/E7S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM VLP NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5463E is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module is single rank, consists


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    VL47B5463E-K9/F8/E7S 512Mx64 204-PIN VL47B5463E 512Mx8 204-pin PDF

    Contextual Info: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of


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    VL47D5263D-K0/K9/F8S 512Mx64 204-PIN VL47D5263D 256Mx8 204-pin 204-pin, PDF

    Contextual Info: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of


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    VL47B5263B-K9S/F8S/E7S-IU 512MX64 VL47B5263B 256Mx8 204-pin 204-pin, in-li00 PDF

    Contextual Info: Product Specifications PART NO.: VL47D5263D-K0/K9/F8S REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47D5263D is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of


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    VL47D5263D-K0/K9/F8S 512Mx64 204-PIN VL47D5263D 256Mx8 204-pin 204-pin, PC3-12800, PC3-10600, PDF

    DDR3-1066

    Abstract: DDR3-1333 PC3-10600
    Contextual Info: Product Specifications PART NO: VL47B5263B-K9S/F8S/E7S-IU REV: 1.1 General Information 4GB 512MX64 DDR3 UNBUFFERED SODIMM 204 PIN WITH BGA DRAM COMPONENTS UNDER-FILLED Description The VL47B5263B is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of


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    VL47B5263B-K9S/F8S/E7S-IU 512MX64 VL47B5263B 256Mx8 204-pin 204-pin, in-li00 DDR3-1066 DDR3-1333 PC3-10600 PDF

    Contextual Info: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM


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    VL47B5263A-K9S/F8S/E7S-I 512MX64 VL47B5263A 256Mx8 204-pin 204-pin, PDF

    850C

    Abstract: PC3-10600
    Contextual Info: Product Specifications PART NO: VL47B5263A-K9S/F8S/E7S-I REV: 1.0 General Information 4GB 512MX64 DDR3 UNBUFFERED 204 PIN SODIMM Description: The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This memory module consists of sixteen CMOS 256Mx8 bit with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM


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    VL47B5263A-K9S/F8S/E7S-I 512MX64 VL47B5263A 256Mx8 204-pin 204-pin, Fas00 850C PC3-10600 PDF

    Contextual Info: Product Specifications PART NO.: VL47B5263A-F8SD-I REV: 1.0 General Information 4GB 512Mx64 DDR3 SDRAM NON-ECC UNBUFFERED SODIMM 204-PIN Description The VL47B5263A is a 512Mx64 DDR3 SDRAM high density SODIMM. This dual rank memory module consists of sixteen CMOS 256Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages and a 2K EEPROM with


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    VL47B5263A-F8SD-I 512Mx64 204-PIN VL47B5263A 256Mx8 204-pin PDF

    K4B4G0846D

    Abstract: PC3-10600R-09-10-E1-D2 PC3-10600R-09-10-E1-P1 M393B1K70DH0 M471B5273DH0 k4b4g0446d M393B5270DH0 M471B5773DH0 M393B5273DH0-YH9 M393B5273DH0
    Contextual Info: Jul. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


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    PC3-10600R-09-10-E1-P1

    Abstract: PC3-10600R-09-10-E1-D2 M393B5170EH1-CH9 10600R M393B5170EH1 samsung DDR3 SDRAM 2GB raw card DDR3 PC3 10600R PC3-10600R-09-10-E1 DDR3 VLP Unbuffered DIMM
    Contextual Info: May. 2010 DDR3 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


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    PDF

    Contextual Info: Wintec Industries – OEM Embedded Design Center Where to Buy | Contact Us CONSUMER EMBEDDED OEM SUPPLY CHAIN CLOUD SERVICES DISTRIBUTION Submit SUPPORT ABOUT WINTEC Embedded OEM Home > Embedded OEM > DRAM > DDR3 DRAM DRAM DDR3


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    800Mb/s WD3SN04GX816-xxxxx-yy 512x64 256Mx8 WD3SN04GX808-xxxxx-yy 512Mx8 1066J 1066MHz 1333L PDF

    samsung ddr3

    Abstract: DDR3 jedec ddr3 samsung DDR3 SDRAM 2GB DDR3 sodimm 4gb samsung "DDR3 SDRAM" DDR3 DIMM ddr3 sodimm 1333 16GB DDR3 memory DDR3 1gb
    Contextual Info: Samsung DDR3 SDRAM Next-Generation PC Memory Reaches 1.6Gb/second Massive Bandwidth and Low Power Consumption Advanced Memory for New High-Performance Systems Today’s most advanced production memory standard, Samsung DDR3, continues the performance increases and architectural


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    DS-08-DRAM-001 samsung ddr3 DDR3 jedec ddr3 samsung DDR3 SDRAM 2GB DDR3 sodimm 4gb samsung "DDR3 SDRAM" DDR3 DIMM ddr3 sodimm 1333 16GB DDR3 memory DDR3 1gb PDF

    K4X2G323PD8GD8

    Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
    Contextual Info: PRODUCT SELECTION GUIDE Displays, Memory and Storage 2H 2012 Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, mobile, and graphics memory are found in computers—from


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    BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 PDF

    M471B5173BH0

    Abstract: 512Mx8
    Contextual Info: Rev. 1.4, May. 2012 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mx8 1Gx64 PDF

    Contextual Info: Rev. 1.4, May. 2012 M471B5173BH0 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M471B5173BH0 M471B1G73BH0 204pin 78FBGA K4B4G0846B 512Mx8 1Gx64 PDF

    Contextual Info: Wintec Industries – OEM Embedded Design Center Where to Buy | Contact Us CONSUMER EMBEDDED OEM SUPPLY CHAIN CLOUD SERVICES DISTRIBUTION Submit SUPPORT ABOUT WINTEC Embedded OEM Home > Embedded OEM > DRAM > DDR2 DRAM DRAM DDR2


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    WD2SN04GX816-xxxx-yy 512x64 256Mx8 WD2SN04GX808-xxxx-yy 512Mx8 800MHz 667MHz 533MHz PDF

    M471B5273CH0-CF8

    Abstract: M471B5773CHS-CF8 M471B5273CH0 M471B5773CHS M471B5773 K4B2G0846C-HC 78-FBGA samsung dimm DDR3 78FBGA DDR3-1066
    Contextual Info: Rev. 1.1, Jan. 2010 M471B5773CHS M471B5273CH0 204pin Unbuffered SODIMM based on 2Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M471B5773CHS M471B5273CH0 204pin 78FBGA K4B2G0846C 256Mbx8 512Mx64 M471B5273CH0-CF8 M471B5773CHS-CF8 M471B5273CH0 M471B5773CHS M471B5773 K4B2G0846C-HC 78-FBGA samsung dimm DDR3 DDR3-1066 PDF

    samsung ddr3 ram MTBF

    Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
    Contextual Info: PRODUCT SELECTION GUIDE LCD, Memory and Storage | 1H 2012 + Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


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    BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd PDF

    M471B5173

    Contextual Info: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


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    M471B5173CB0 M471B1G73CB0 204pin 78FBGA estoppel512M K4B4G0846C 512Mx8 1Gx64 M471B5173 PDF

    Contextual Info: Rev. 1.21, Oct. 2013 M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B5173QH0 M474B1G73QH0 204pin Unbuffered SODIMM based on 4Gb Q-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


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    M471B5674QH0 M471B5173QH0 M471B1G73QH0 M474B5173QH0 M474B1G73QH0 204pin 78FBGA K4B4G0846Q 512Mbx8 1Gx72 PDF

    m471b5273

    Abstract: M471B5273BH1-CF8 2rx16 m471 K4B2G0846B K4B2G sstl15 78FBGA DDR3-1066 DDR3-1333
    Contextual Info: Unbuffered SoDIMM DDR3 SDRAM DDR3 SDRAM Specification 204pin Unbuffered SODIMM based on 2Gb B-die 64-bit Non-ECC 78FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


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    204pin 64-bit 78FBGA 256Mbx8 512Mx64 K4B2G0846B m471b5273 M471B5273BH1-CF8 2rx16 m471 K4B2G sstl15 DDR3-1066 DDR3-1333 PDF

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Contextual Info: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0 PDF