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    DDR SDRAM 128MBIT 8MX16 Search Results

    DDR SDRAM 128MBIT 8MX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT25SF128A-SHBHD-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF128A-SHB-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25SF128A-MHB-T Renesas Electronics Corporation 128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support Visit Renesas Electronics Corporation
    AT25QF128A-MHB-T Renesas Electronics Corporation 128Mbit, 3V SPI Serial Flash Memory with Dual I/O and Quad I/O Support Visit Renesas Electronics Corporation
    AT25QF128A-SHBHD-T Renesas Electronics Corporation 128Mbit, 3V SPI Serial Flash Memory with Dual I/O and Quad I/O Support Visit Renesas Electronics Corporation

    DDR SDRAM 128MBIT 8MX16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HY5MS5B6BLFP

    Abstract: HY5MS5B6BL
    Text: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128Mbit 8Mx16bit) 128Mbit 16bit) H5MS1262EFP 16bits) HY5MS5B6BLFP HY5MS5B6BL

    hynix mcp

    Abstract: HY5MS5B6BL H5MS1262EFP 2Mx16
    Text: 128Mbit MOBILE DDR SDRAM based on 2M x 4Bank x16 I/O Specification of 128M 8Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 2,097,152 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for


    Original     		PDF 128Mbit 8Mx16bit) 128Mbit 16bits) 16bit) H5MS1262EFP 00Typ. hynix mcp HY5MS5B6BL 2Mx16

    JESD-21C

    Abstract: No abstract text available
    Text: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 October 15, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2


    Original     		PDF PC1600 PC2100 PC1600/PC2100 JC-42 JESD-21C

    PC1600U-25330-B1

    Abstract: JESD-21C JESD21 ddr dimm pinout ddr sdram 128Mbit 8Mx16 PC2100 32MX7
    Text: PC1600 and PC2100 DDR SDRAM Unbuffered DIMM Design Specification Revision 1.1 June 29, 2001 Table of Contents PC1600/PC2100 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents Table of Contents .2


    Original     		PDF PC1600 PC2100 PC1600/PC2100 JC-42 PC1600U-25330-B1 JESD-21C JESD21 ddr dimm pinout ddr sdram 128Mbit 8Mx16 32MX7

    sdram pcb layout gerber

    Abstract: ddr sdram 128Mbit 8Mx16 pc133 sdram 512mb ECC unbuffered pc133 SDRAM DIMM PC133 SDRAM Unbuffered DIMM trace code micron label PC200U-25330B-1 JC42 sdram pc133 pcb layout guide micron sdram pc133 pcb layout guide
    Text: DDR SDRAM Unbuffered DIMM Design Specification Revision 0.6 November 1999 JC-42.5 Item #:_ Prepared By Micron Technology and IBM DDR SDRAM Unbuffered DIMM Design Specification Page 2 Revision 0.6 DDR SDRAM Unbuffered DIMM Design Specification Table of Contents


    Original     		PDF JC-42 sdram pcb layout gerber ddr sdram 128Mbit 8Mx16 pc133 sdram 512mb ECC unbuffered pc133 SDRAM DIMM PC133 SDRAM Unbuffered DIMM trace code micron label PC200U-25330B-1 JC42 sdram pc133 pcb layout guide micron sdram pc133 pcb layout guide

    512MB 8Mx32 DDR DRAM

    Abstract: No abstract text available
    Text: SU5320835D4F0CU August 19, 2004 Ordering Information Part Numbers Description Module Speed SM5320835D4F0CG 8Mx32 32MB , DDR, 100-pin DIMM, Unbuffered, Non-ECC, 8Mx16 Based, DDR266A, 25.40mm, 22Ω DQ termination. PC2100 @ CL 2.0, 2.5 SB5320835D4F0CG 8Mx32 (32MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC,


    Original     		PDF SU5320835D4F0CU SM5320835D4F0CG SB5320835D4F0CG 8Mx32 100-pin 8Mx16 DDR266A, 512MB 8Mx32 DDR DRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)


    Original     		PDF IS43R16800CC 8Mx16 128Mb 66-pin IS43R16800CC-5TLI IS43R16800CC-6TLI IS43R16800CC-75TLI

    Untitled

    Abstract: No abstract text available
    Text: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM JUNE 2009 FEATURES: DESCRIPTION: •฀ VDD =VDDQ = 2.5V+0.2V -5, -6, -75 •฀ Double data rate architecture; two data transfers per clock cycle. •฀ Bidirectional , data strobe (DQS) is transmitted/ received with data


    Original     		PDF IS43R16800CC 8Mx16 128Mb IS43R16800CC-6TL 66-pin IS43R16800CC-5TLI IS43R16800CC-6TLI

    IS43R16800CC

    Abstract: 43R16800CC A3S56D zentel ddr sdram 128Mbit 8Mx16 40ETP
    Text: IS43R16800CC 8Mx16 128Mb DDR Synchronous DRAM FEATURES: • Vdd =Vddq = 2.5V+0.2V -5, -6, -75 • Double data rate architecture; two data transfers per clock cycle. • Bidirectional , data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK)


    Original     		PDF IS43R16800CC 8Mx16 128Mb IS43R16800CC-6TL 66-pin IS43R16800CC-5TLI IS43R16800CC-6TLI IS43R16800CC 43R16800CC A3S56D zentel ddr sdram 128Mbit 8Mx16 40ETP

    R362B

    Abstract: R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217
    Text: Intel PXA26x Processor Family Design Guide — Revision 1.0 October 2002 Order Number: 278639-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN


    Original     		PDF PXA26x nPIOIS16 09Sept02 DCPXA26x DCPXA26x R362B R113B C307B C245B C268B r272b CONN-HEADER 3 pos u78b gp741 BT 217

    IS43R16800E

    Abstract: No abstract text available
    Text: IS43/46R16800E, IS43/46R32400E ADVANCED INFORMATION 4Mx32, 8Mx16 MAY 2011 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 128-Mbit 728-bit 16-bit 32-bit IS43R16800E

    IS43R32400E

    Abstract: IS43R32400E-5BLI IS43R16800E-6TL IS43R16800E
    Text: IS43/46R16800E, IS43/46R32400E MARCH 2012 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 60-Ball) IS43R32400E IS43R32400E-5BLI IS43R16800E-6TL IS43R16800E

    IS43R16800E

    Abstract: IS43R32400E-5BLI
    Text: IS43/46R16800E, IS43/46R32400E FEBRUARY 2013 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • VDD and VDDQ: 2.5V ± 0.2V • SSTL_2 compatible I/O • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 60-Ball) IS43R16800E IS43R32400E-5BLI

    IS43R16800E

    Abstract: No abstract text available
    Text: IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb DDR SDRAM FEBRUARY 2013 FEATURES DEVICE OVERVIEW •฀ VDD฀and฀VDDQ:฀2.5V฀±฀0.2V฀ •฀ SSTL_2฀compatible฀I/O •฀ Double-data฀rate฀architecture;฀two฀data฀transfers฀ per clock cycle


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 60-Ball) IS43R16800E

    IS43R16800E

    Abstract: DDR SDRAM
    Text: IS43/46R16800E, IS43/46R32400E JANUARY 2014 4Mx32, 8Mx16 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • • • • ISSI’s 128-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 134,217,728-bit memory


    Original     		PDF IS43/46R16800E, IS43/46R32400E 4Mx32, 8Mx16 128Mb 128-Mbit 728-bit 16-bit 32-bit IS43R16800E DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 MARCH 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data


    Original     		PDF IS43R16800D, IS43R32400D 4Mx32, 8Mx16 128Mb IS43R32400D-4BLI IS43R32400D-5BLI IS43R32400D-6BLI 144-ball

    Untitled

    Abstract: No abstract text available
    Text: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 SEPTEMBER 2008 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data


    Original     		PDF IS43R16800D, IS43R32400D 4Mx32, 8Mx16 128Mb

    issi 8Mx16 SDRAM

    Abstract: ISSI 346
    Text: IS43R16800D, IS43R32400D PRELIMINARY INFORMATION 4Mx32, 8Mx16 JULY 2009 128Mb DDR SDRAM FEATURES DEVICE OVERVIEW • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data


    Original     		PDF IS43R16800D, IS43R32400D 4Mx32, 8Mx16 128Mb 144-ball IS43R32400D-4BLI IS43R32400D-5BLI IS43R32400D-6BLI issi 8Mx16 SDRAM ISSI 346

    Untitled

    Abstract: No abstract text available
    Text: IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb Mobile DDR SDRAM FEATURES: • Double-data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe DQS is transmitted/ received with data, to be used in capturing data at the receiver


    Original     		PDF IS43LR16800D, IS43LR32400D 4Mx32, 8Mx16 128Mb IS43LR32400D-5BL IS43LR32400D-6BL IS43LR32400D-75BL 90-ball

    822AT

    Abstract: No abstract text available
    Text: 3rd 128M DDR SDRAM HY5DU28422AT HY5DU28822AT HY5DU281622AT Revision 1.3 April 2001 This docum ent is a general product description and is subject to change without notice. HY5DU28422AT/822AT/1622AT 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D ESC R IPTIO N


    OCR Scan     		PDF HY5DU28422AT HY5DU28822AT HY5DU281622AT HY5DU28422AT/822AT/1622AT 128Mb HY5DU28422, HY5DU28822 HY5DU281622 728-bit 822AT

    urst 1081

    Abstract: No abstract text available
    Text: 2nd 128M DDR SDRAM HY5DU28422T HY5DU28822T HY5DU281622T Revision 1.3 April 2001 This document is a general product description and is subject to change without notice. 289 HY5DU28422T/822T/1622T 128Mb x4, x8, x16 Double Data Rate SDRAM PRELIMINARY D E S C R IP T IO N


    OCR Scan     		PDF HY5DU28422T HY5DU28822T HY5DU281622T HY5DU28422T/822T/1622T 128Mb 728-b Y5DU28422T/822T/1622T 128M-bit urst 1081

    hy57v168010b

    Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
    Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x


    OCR Scan     		PDF 256Kx16 HY57V41610TC 400mil 16Mbit 1Mx16 HY57V16401 HY57V168010BTC HY57V161610BTC 44pin) hy57v168010b ddr sdram 128Mbit 8Mx16 54-PIN

    W25X128

    Abstract: W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV
    Text: winband We D eliv er 2009 Product Selection Guide Mobile RAM Specialty DRAM Flash Memory Memory Product Foundry Service O W Product Selection Guide 2009 » Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR SDRAM 4 Specialty DRAM SDRAM DDR SDRAM


    OCR Scan     		PDF 300mm W25X128 W25Q40 w25q64 W25Q16BW W25Q64bv W25X80BV W25Q32BV W25016BV winbond* W25Q W25X16AV

    winband

    Abstract: W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV
    Text: t/vinband We D eliver Product Selection Guide - o 2010 Mobile RAM Specialty DRAM Graphics DRAM Flash Memory Memory Product Foundry Service Product Selection Guide 2010 Contents 2 Mobile RAM Pseudo SRAM Low Power SDR SDRAM Low Power DDR / DDR2 SDRAM


    OCR Scan     		PDF 300mm winband W25X40BV W25Q408W w25x40v W651GG2JB WSON* 8x6mm w25q128 W25X16AV 208-MIL w25X20BV