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    DDR RAM POWER SUPPLY Search Results

    DDR RAM POWER SUPPLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DDR RAM POWER SUPPLY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Elpida mobile

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR Mobile RAM EDK2516CBBH 16M words x 16 bits Description Pin Configurations The EDK2516CB is a 256M bits DDR Mobile RAM organized as 4,194,304 words×16 bits×4 banks. The DDR Mobile RAM achieved low power consumption


    Original     		PDF EDK2516CBBH EDK2516CB 60-ball M01E0107 E0300E20 Elpida mobile

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR Mobile RAM EDK2516CBBH 16M words x 16 bits Description Pin Configurations The EDK2516CB is a 256M bits DDR Mobile RAM organized as 4,194,304 words ×16 bits × 4 banks. The DDR Mobile RAM achieved low power consumption


    Original     		PDF EDK2516CBBH EDK2516CB 60-ball M01E0107 E0381E10

    EDK2516CBBH-10-E

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 256M bits DDR Mobile RAM EDK2516CBBH 16M words x 16 bits Description Pin Configurations The EDK2516CBBH is a 256M bits DDR Mobile RAM organized as 4,194,304 words ×16 bits × 4 banks. The DDR Mobile RAM achieved low power consumption


    Original     		PDF EDK2516CBBH EDK2516CBBH 60-ball M01E0107 E0300E90 EDK2516CBBH-10-E

    M65KG256AF

    Abstract: No abstract text available
    Text: M65KG256AF 256Mbit 4 Banks x 4M x 16 1.8 V Supply, 133MHz, DDR Low Power SDRAM Preliminary Data Feature summary • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/clock cycle


    Original     		PDF M65KG256AF 256Mbit 133MHz, 256Mbit 266Mbit/s 133MHz M65KG256AF

    Untitled

    Abstract: No abstract text available
    Text: M65KG256AF 256Mbit 4 Banks x 4M x 16 1.8 V Supply, 133MHz, DDR Low Power SDRAM Preliminary Data Feature summary • 256Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/clock cycle


    Original     		PDF M65KG256AF 256Mbit 133MHz, 256Mbit 266Mbit/s 133MHz M65KG256AF8W6T M65KG256AF

    M65KG256AB

    Abstract: A476
    Text: M65KG256AB 256Mbit 4 Banks x 4M x 16 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM PRELIMINARY DATA Features summary • 256Mbit SYNCHRONOUS DYNAMIC RAM – Organized as 4 Banks of 4MWords, each 16 bits wide ■ DOUBLE DATA RATE (DDR) – 2 Data Transfers/Clock Cycle


    Original     		PDF M65KG256AB 256Mbit 133MHz 256Mbit 266Mbit/s 133MHz M65KG256AB A476

    M65KG512AB

    Abstract: No abstract text available
    Text: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266Mbit/s (max)


    Original     		PDF M65KG512AB 512Mbit 512Mbit 266Mbit/s 133MHz M65KG512AB

    Untitled

    Abstract: No abstract text available
    Text: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed


    Original     		PDF M65KG512AB 512Mbit 512Mbit 332Mbit/s 133MHz 166MHz

    Untitled

    Abstract: No abstract text available
    Text: M65KG512AA 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266 Mbit/s (max)


    Original     		PDF M65KG512AA 512Mbit 512Mbit

    Untitled

    Abstract: No abstract text available
    Text: M65KG512AA 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 266 Mbit/s (max)


    Original     		PDF M65KG512AA 512Mbit 512Mbit M65KG512AA8W9 M65KG512AA

    M65KG512AB

    Abstract: No abstract text available
    Text: M65KG512AB 512Mbit 4 banks x 8 Mb x 16 1.8 V supply, DDR low power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 banks of 8 Mwords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332 Mbit/s max. for 6ns speed


    Original     		PDF M65KG512AB 512Mbit 512Mbit M65KG512AB

    K4D623237

    Abstract: toggle ddr K4D623237M
    Text: Preliminary 64M DDR SGRAM K4D623237M 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe FEATURES • 3.3V ±5% power supply for device operation • Edge aligned data & data strobe output • 2.5V ±5% power supply for I/O interface


    Original     		PDF K4D623237M 32Bit 100pin 166MHz 333Mbps/pinary K4D623237 toggle ddr K4D623237M

    MICROELECTRONICS

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS INTRODUCTION SHEET NP05-11457-1E TM 256 Mbit Consumer FCRAM 1.8 V, x32, Low Power DDR SDRAM, SiP-oriented MB81EDS253245 FEATURES • • • • • • • • • • RAM featuring low power consumption and high-speed data transfer


    Original     		PDF NP05-11457-1E MB81EDS253245 32bit MICROELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: BeagleBoard-xM breaks 1-GHz performance barrier for embedded design innovators and hobbyists BeagleBoard-xM delivers extra MIPS with 1-GHz ARM Cortex -A8 performance and extra memory with 512MB of low-power DDR RAM, enabling hobbyists, innovators and engineers


    Original     		PDF 512MB SPRT555

    EDD10323BBH-LS

    Abstract: 1g bits ddr mobile ram
    Text: PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD10323BBH-LS (32M words x 32 bits) Specifications Features • Density: 1G bits • Organization: 8M words × 32 bits × 4 banks • Package: 90-ball FBGA


    Original     		PDF EDD10323BBH-LS 90-ball 400Mbps/333Mbps M01E0706 E1435E11 EDD10323BBH-LS 1g bits ddr mobile ram

    1g bits ddr mobile ram

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD10163BBH-LS (64M words x 16 bits) Specifications Features • Density: 1G bits • Organization: 16M words × 16 bits × 4 banks • Package: 60-ball FBGA


    Original     		PDF EDD10163BBH-LS 60-ball 400Mbps/333Mbps M01E0706 E1436E21 1g bits ddr mobile ram

    EDD51323DBH-LS

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51323DBH-LS (16M words x 32 bits) Specifications Features • Density: 512M bits • Organization: 4M words × 32 bits × 4 banks • Package: 90-ball FBGA


    Original     		PDF EDD51323DBH-LS 90-ball 400Mbps/333Mbps M01E0706 E1432E11 EDD51323DBH-LS

    EDD10163BBH-5BLS-F

    Abstract: ELPIDA mobile DDR DDR333 DDR400 1g bits ddr mobile ram
    Text: PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD10163BBH-LS (64M words x 16 bits) Specifications Features • Density: 1G bits • Organization: 16M words × 16 bits × 4 banks • Package: 60-ball FBGA


    Original     		PDF EDD10163BBH-LS 60-ball 400Mbps/333Mbps M01E0706 E1436E30 EDD10163BBH-5BLS-F ELPIDA mobile DDR DDR333 DDR400 1g bits ddr mobile ram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51323EBH-LS (16M words x 32 bits) Specifications Features • Density: 512M bits • Organization: 4M words × 32 bits × 4 banks • Package: 90-ball FBGA


    Original     		PDF EDD51323EBH-LS 90-ball 400Mbps/333Mbps M01E0706 E1635E10

    E1433

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51163DBH-LS (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization: 8M words × 16 bits × 4 banks • Package: 60-ball FBGA


    Original     		PDF EDD51163DBH-LS 60-ball 400Mbps/333Mbps M01E0706 E1433E21 E1433

    DDR RAM 512M

    Abstract: ELPIDA mobile DDR DDR333 DDR400
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51163DBH-LS (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization: 8M words × 16 bits × 4 banks • Package: 60-ball FBGA


    Original     		PDF EDD51163DBH-LS 60-ball 400Mbps/333Mbps M01E0706 E1433E30 DDR RAM 512M ELPIDA mobile DDR DDR333 DDR400

    ELPIDA mobile DDR

    Abstract: EDD10323BBH-6ELS-F DDR333 DDR400 EDD10323BBH-LS 1g bits ddr mobile ram
    Text: PRELIMINARY DATA SHEET 1G bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD10323BBH-LS (32M words x 32 bits) Specifications Features • Density: 1G bits • Organization: 8M words × 32 bits × 4 banks • Package: 90-ball FBGA


    Original     		PDF EDD10323BBH-LS 90-ball 400Mbps/333Mbps M01E0706 E1435E20 ELPIDA mobile DDR EDD10323BBH-6ELS-F DDR333 DDR400 EDD10323BBH-LS 1g bits ddr mobile ram

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51163EBH-LS (32M words x 16 bits) Specifications Features • Density: 512M bits • Organization: 8M words × 16 bits × 4 banks • Package: 60-ball FBGA


    Original     		PDF EDD51163EBH-LS 60-ball 400Mbps/333Mbps M01E0706 E1634E10

    ELPIDA mobile DDR

    Abstract: DDR333 DDR400 EDD51323DBH-LS E1432
    Text: PRELIMINARY DATA SHEET 512M bits DDR Mobile RAM WTR Wide Temperature Range , Low Power Function EDD51323DBH-LS (16M words x 32 bits) Specifications Features • Density: 512M bits • Organization: 4M words × 32 bits × 4 banks • Package: 90-ball FBGA


    Original     		PDF EDD51323DBH-LS 90-ball 400Mbps/333Mbps M01E0706 E1432E20 ELPIDA mobile DDR DDR333 DDR400 EDD51323DBH-LS E1432