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    Infineon Technologies AG DDB6U50N22W1RPB11BPSA1

    EASY BRIDGE MODULE
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    DigiKey DDB6U50N22W1RPB11BPSA1 Tray 30 1
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    Avnet Americas DDB6U50N22W1RPB11BPSA1 Tray 30 14 Weeks 1
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    Mouser Electronics DDB6U50N22W1RPB11BPSA1 30
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    Arrow Electronics DDB6U50N22W1RPB11BPSA1 30 14 Weeks 1
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    Newark DDB6U50N22W1RPB11BPSA1 Bulk 27 1
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    Rochester Electronics DDB6U50N22W1RPB11BPSA1 807 1
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    Infineon Technologies AG DDB6U50N16W1RPB11BPSA1

    LOW POWER EASY
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    DigiKey DDB6U50N16W1RPB11BPSA1 Tray 30 1
    • 1 $45.71
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    Avnet Americas DDB6U50N16W1RPB11BPSA1 Tray 30 14 Weeks 1
    • 1 $19.88034
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    Mouser Electronics DDB6U50N16W1RPB11BPSA1 28
    • 1 $43.26
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    • 100 $31.92
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    Arrow Electronics DDB6U50N16W1RPB11BPSA1 300 14 Weeks 1
    • 1 $23.44
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    Newark DDB6U50N16W1RPB11BPSA1 Bulk 30 1
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    EBV Elektronik DDB6U50N16W1RPB11BPSA1 15 Weeks 30
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    Infineon Technologies AG DDB6U50N16W1RPBPSA1

    LOW POWER EASY AG-EASY1B-711
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    DigiKey DDB6U50N16W1RPBPSA1 Tray 27 1
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    Mouser Electronics DDB6U50N16W1RPBPSA1 26
    • 1 $42.9
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    Arrow Electronics DDB6U50N16W1RPBPSA1 298 14 Weeks 1
    • 1 $23.2
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    Newark DDB6U50N16W1RPBPSA1 Bulk 30 1
    • 1 $42.59
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    EBV Elektronik DDB6U50N16W1RPBPSA1 15 Weeks 30
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    Infineon Technologies AG DDB6U75N16W1RBOMA1

    IGBT MOD 1200V 69A 335W
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    DigiKey DDB6U75N16W1RBOMA1 Tray 24 1
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    Newark DDB6U75N16W1RBOMA1 Bulk 165 1
    • 1 $74.29
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    Rochester Electronics DDB6U75N16W1RBOMA1 12 1
    • 1 $31.49
    • 10 $31.49
    • 100 $29.6
    • 1000 $26.77
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    TME DDB6U75N16W1RBOMA1 1
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    Chip1Stop DDB6U75N16W1RBOMA1 Tray 18
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    EBV Elektronik DDB6U75N16W1RBOMA1 15 Weeks 24
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    Infineon Technologies AG DDB6U180N22RBPSA1

    LOW POWER ECONO
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    DigiKey DDB6U180N22RBPSA1 Tray 15 1
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    DDB6U Datasheets (127)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DDB6U100N10 Eupec Bridge Rectifier Original PDF
    DDB6U100N10R Eupec Original PDF
    DDB6U100N10R Eupec DIODE STANDARD RECOVERY RECTIFIER 1000V 104A Original PDF
    DDB6U100N12R Eupec Original PDF
    DDB6U100N12R Eupec DIODE STANDARD RECOVERY RECTIFIER 1200V 104A Original PDF
    DDB6U100N12RR Eupec TRANS IGBT MODULE N-CH 1200V 50A Original PDF
    DDB6U100N12RR Eupec Original PDF
    DDB6U100N12RR Eupec Diode Module with Chopper-IGBT Original PDF
    DDB6U100N14R Eupec Original PDF
    DDB6U100N14R Eupec DIODE STANDARD RECOVERY RECTIFIER 1400V 104A Original PDF
    DDB6U100N14RR Eupec Original PDF
    DDB6U100N14RR Eupec Diode Module with Chopper-IGBT Original PDF
    DDB6U100N16R Eupec Original PDF
    DDB6U100N16R Eupec DIODE STANDARD RECOVERY RECTIFIER 1600V 104A Original PDF
    DDB6U100N16R Infineon Technologies Diode Bridges; Package: AG-ECONO2-1; VDRM/ VRRM (V): 1,600.0 V; IFSM (max): 550.0 A; Configuration: 3 phase bridge rectifier uncontrolled; Housing: EconoBRIDGE ; Original PDF
    DDB6U100N16RR Eupec TRANS IGBT MODULE N-CH 1600V 50A Original PDF
    DDB6U100N16RR Eupec Original PDF
    DDB6U100N16RR Eupec Diode Module with Chopper-IGBT Original PDF
    DDB6U100N16RRBOSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - IGBTs - Modules - MOD DIODE BRIDGE ECONO2-3 Original PDF
    DDB6U100N16RRBPSA1 Infineon Technologies LOW POWER ECONO AG-ECONO2A-211 Original PDF
    ...

    DDB6U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    papst

    Abstract: KM33 100S 150F KM111 ddb6u145n16k 4658 km11d
    Text: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35°C mit ISOPACK Typenbezeichnung Bauelement click on "Maßbild" No. for download Kühlkörper Lüftertyp Maßbild B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC


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    PDF KM11-DDB6U85N-RC KM33-DDB6U85N-RC KM33-DDB6U145N-RC KM33-DDB6U205N-RC KM14-DDB6U145N-LRCT KM14-DDB6U205N-LRCT DDB6U85N08K DDB6U145N08K DDB6U205N08K papst KM33 100S 150F KM111 ddb6u145n16k 4658 km11d

    DDB6U25N16VR

    Abstract: 76w9
    Text: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2


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    PDF DDB6U25N16VR DDB6U25N16VR 76w9

    Untitled

    Abstract: No abstract text available
    Text: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DDB6U75N16W1R VorläufigeDaten PreliminaryData Diode,Gleichrichter/Diode,Rectifier HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage


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    PDF DDB6U75N16W1R

    k3532

    Abstract: lm 3244
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16W1R Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values 32C5 36!"#$6%1&3132214' *6+6,-.


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    PDF DDB6U75N16W1R D36134 623D32 2C46523 612C6A 1231423567896AB 4112CD3567896EF k3532 lm 3244

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,


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    PDF DDB6U25N16VR 3DE1322E14DD 2313B 32E36 26323D 32B612 4256F 223DB6 6323D 223DB64B6

    Untitled

    Abstract: No abstract text available
    Text: DDB6U70N12KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current70 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.550¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)


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    PDF DDB6U70N12KOF Current70

    ddb6u205n16k

    Abstract: ddb6u145n16k 100S 150F KM11-DDB6U85N-RC KM33-DDB6U205N-RC km11d
    Text: B6U - Schaltung Luftselbstkühlung TA = 45 °C mit ISOPACK verst. Luftkühlung TA = 35°C click on MB to select outline Typenbezeichnung SAP Bauelement KK Lüfter MB B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC B6U 230/310 - 100S - KM33-DDB6U145N-RC


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    PDF KM11-DDB6U85N-RC KM33-DDB6U85N-RC KM33-DDB6U145N-RC KM33-DDB6U205N-RC KM14-DDB6U145N-LRCT KM14-DDB6U205N-LRCT DDB6U85N08K DDB6U145N08K DDB6U205N08K ddb6u205n16k ddb6u145n16k 100S 150F KM11-DDB6U85N-RC KM33-DDB6U205N-RC km11d

    DDB6U30N08VR

    Abstract: No abstract text available
    Text: Technische Information / technical information DDB6U30N08VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # 1 2 $ & # $ !3% 2 4 2 2 8 2 4 2 2 !3% % 9


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    PDF DDB6U30N08VR DDB6U30N08VR

    DDB6U75N16YR

    Abstract: No abstract text available
    Text: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0


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    PDF DDB6U75N16YR DDB6U75N16YR

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+


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    PDF DDB6U75N16YR 14BBFB 06123B F223B 6043C0F0613265C 3269F 6123B 043C0F06 06123B

    Untitled

    Abstract: No abstract text available
    Text: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0


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    PDF DDB6U75N16YR

    Untitled

    Abstract: No abstract text available
    Text: DDB6U110N14KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current110 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.950¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)


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    PDF DDB6U110N14KOF Current110

    RT89

    Abstract: 4G87 DDB6U75N16W1R
    Text: Technische Information / technical information DDB6U75N16W1R IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # ' ' 45 & # $ ! %4 64 4 $ 5 ; ' 4 64 4! %


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    PDF DDB6U75N16W1R RT89 4G87 DDB6U75N16W1R

    Untitled

    Abstract: No abstract text available
    Text: DDB6U60N10KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)


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    PDF DDB6U60N10KOF Current60

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


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    welding rectifier circuit board

    Abstract: GTO hvdc thyristor SCR GTO three phase fully controlled rectifier scr control circuit for welding single phase fully controlled rectifier TT 2240 TDB6HK IGCT thyristor tt 330
    Text: Product Information May 2006 Overview Bridge Rectifier, AC-Switches Product Information May 2006 Thyristors & Diodes 3000 VRRM[V] 2000 BIPOLAR POWER SEMICONDUCTORS from Infineon Technologies are applied in the most varied fields of applications in a power range from a few kilo watts up


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    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


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    PDF D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd

    BSM 50 GX 120 DN2

    Abstract: bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree
    Text: „Econo“my improvement in inverter-converter-moduldesign Gottfried Ferber, eupec GmbH, Warstein-Belecke Ralf Jörke, eupec GmbH, Warstein-Belecke Christian Lammers, Ruhr-Universität Bochum Dr. Andreas Lenniger, eupec GmbH, Warstein-Belecke Abstract: To realise an economy inverter construction, it is a good solution to use high reliable


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    PDF 50GD120DN2G 75GD120DN2 100GD120DN2 100GT120DN2 150GT120DN2 200GT120DN2 DDB6U84N* 0A/1200V DDB6U100N* BSM 50 GX 120 DN2 bsm 50 Gx 120 IGBT BSM20GD60DN2E3224 35GD120DN2E3224 25GD120DN2 25GD120DN2E3224 75GD120DN2 15gd120dn2e322 100GD120DN2 three phase bridge inverter 120 degree

    B2HKF

    Abstract: TTB6C110N TDB6HK110N DDB6U160N B2HKF 250 TDB2HKF85 TDB2HKF B6U 205 N L TTB6C cr 4180
    Text: Fast Asymmetric Thyristors Type V drm V rrm V V V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) It r s m A It s m i i 2dt Itavm^c kA A2s A/°C 10ms 10ms tvj max tvj max *103 400 2,5 30 V(TO) rT (di/d t)cr V m ii A/pis tvj = tvj = DIN I EC tvjma* tvj max 747-6


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    Untitled

    Abstract: No abstract text available
    Text: Fast Asymmetric Thyristors T ype V drm V rrm Itrsm Itsm l i 2dt Itavm^ c V V A kA A2s 10ms 10ms tvj max tvj max *103 A /°C 180° el sin V dsm = V drm V rrm C tq=1 pS A 158 S 600. 1300* 15(50) 400 2,5 30 V(TO) rT (d i/d t)cr V m i2 A / jjs tvj = tvi = DIN I EC


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    PDF 0D021A4

    B2HKF

    Abstract: b2hkf70n CS 13001 IC 7476 DDB6U110N AD60F DD86 ac switches isoPACK B6U60 TDB6HK165N
    Text: Fast Asymmetric Thyristors Type V V drm V V dsm = rrm V V drm V It r s m A rrm C tq = 1 p S It s m i i 2dt kA A2s 10ms 10ms tyj max tyj max It a v m ^ c V (TO ) rT V m ii (di/dt)cr tq 1 ) (dv/dt)cr V gt Igt A/ps MS V/|JS DIN IEC 747-6 V mA tvj = 1 8 0 °


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