DDB6 Search Results

papst

Abstract: KM33 100S 150F KM111 ddb6u145n16k 4658 km11d
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C verstärkte Luftkühlung TA = 35°C mit ISOPACK Typenbezeichnung Bauelement click on "Maßbild" No. for download Kühlkörper Lüftertyp Maßbild B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC

DDB6U25N16VR

Abstract: 76w9
Contextual Info: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DDB6U75N16W1R VorläufigeDaten PreliminaryData Diode,Gleichrichter/Diode,Rectifier HöchstzulässigeWerte/MaximumRatedValues PeriodischeSpitzensperrspannung Repetitivepeakreversevoltage

k3532

Abstract: lm 3244
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16W1R Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values 32C5 36!"#$6%1&3132214' *6+6,-.

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

Contextual Info: DDB6U70N12KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current70 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.550¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

ddb6u205n16k

Abstract: ddb6u145n16k 100S 150F KM11-DDB6U85N-RC KM33-DDB6U205N-RC km11d
Contextual Info: B6U - Schaltung Luftselbstkühlung TA = 45 °C mit ISOPACK verst. Luftkühlung TA = 35°C click on MB to select outline Typenbezeichnung SAP Bauelement KK Lüfter MB B6U 230/310 - 60S - KM11-DDB6U85N-RC B6U 230/310 - 75S - KM33-DDB6U85N-RC B6U 230/310 - 100S - KM33-DDB6U145N-RC

DDB6U30N08VR

Contextual Info: Technische Information / technical information DDB6U30N08VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # 1 2 $ & # $ !3% 2 4 2 2 8 2 4 2 2 !3% % 9

DDB6U75N16YR

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U75N16YR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values !32C5C36"#$ 6%1C3B132214BBFB &' 6 6*+

Contextual Info: Technische Information / technical information DDB6U75N16YR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! $ 1 0 30 0 % ; " #$ % # &' 01 # $ 2% 0 3 0 0

Contextual Info: DDB6U110N14KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current110 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.950¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

RT89

Abstract: 4G87 DDB6U75N16W1R
Contextual Info: Technische Information / technical information DDB6U75N16W1R IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values !" #$ % # ' ' 45 & # $ ! %4 64 4 $ 5 ; ' 4 64 4! %

Contextual Info: DDB6U60N10KOF Diodes 3-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current60 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage1.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.500¥ V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)

ATMEGA 326

Abstract: ATMEGA325A-AUR ATMEGA645A-AU ATMEl 326
Contextual Info: Features • • • • • • • • • • • High Performance, Low Power Atmel AVR® 8-Bit Microcontroller Advanced RISC Architecture – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers

ATMEGA32U4

Abstract: 7766D atmega16 assembly IC ATMEGA16 power supply schematic ATmega16 IR remote control 7766E SP12 SP13 SP14 SP15
Contextual Info: Features • High Performance, Low Power AVR 8-Bit Microcontroller • Advanced RISC Architecture • • • • – 135 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

MC146805E2P

Abstract: 00FF CDP6805E2CE IA6805E2 IA6805E2-PDW40I IA6805E2-PLC44I MC146805E2 MC146805E2CP M3839
Contextual Info: IA6805E2 Microprocessor Unit Data Sheet As of Production Version 00 FEATURES • • • • • • • • • • • Form, Fit, and Function Compatible with the Harris  CDP6805E2CE and Motorola  MC146805E2 Internal 8-bit Timer with 7-Bit Programmable Prescaler

ATMEL 649v

Abstract: 6490V ATMEGA329 TWI avr adc
Contextual Info: Features • High Performance, Low Power Atmel AVR® 8-Bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation

DME3256

Abstract: DMJ4708 DMJ4317 sms1046 DMJ6575 DMF-5845 DMF5848 DMF3383 DME3255 sampling phase detector SPD
Contextual Info: Section 5 Receiving Diodes Table of Contents Schottky Mixer and Detector Diodes in Surface Mount Plastic Packages . 5-3 Ceramic Chip-on-Board Mixer Quads . 5-10

pulse metal detector

Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
Contextual Info: Silicon Schottky Barrier Detector Diodes Features • ■ ■ Low 1/f Noise Bonded Junctions for Reliability Planar Passivated Beam-Lead and Chip Construction Description Applications Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

Contextual Info: Silicon Schottky Barrier Detector Diodes CDB, DDB Series Features • Low 1/f Noise ■ Bonded Junctions for Reliability ■ Planar Passivated Construction Beam-Lead and Chip Description Alpha packaged, beam-lead and chip Schottky barrier detector diodes are designed for applications

ATmega32H

Abstract: PV15100 PCIE10 atmel 718 ac chopper ATMEGA64HVE2
Contextual Info: Atmel ATmega32HVE2/ATmega64HVE2 8-bit AVR Microcontroller with Precise Analog Frontend for very Accurate Voltage and Current Measurement PRELIMINARY DATASHEET Features ● Single-package fully-integrated ● High precision analog frontend ● 17bit single-ended voltage-ADC

PFC 5kw

Abstract: principle block diagram 115v 400hz power schematic diagram 10kw bldc motor speed controller 1242 qfn32 P320 AVR AT90PWM81
Contextual Info: Features • High performance, low power Atmel AVR® 8-bit Microcontroller • Advanced RISC architecture • • • • – 131 powerful instructions - most single clock cycle execution – 32 x 8 general purpose working registers – Fully static operation

Contextual Info: Features • High Performance, Low Power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • – 123 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation