DD70F Search Results

Contextual Info: SANSHA ELECTRIC HFG CO 37E J> DIODE MODULE J / ?MU5l»3 buUUUMU k U .L I’IJ T 'X 5 - q 9 SanRex P o w e r Diode Module DD70F series are designed for various rectifier circuits. D D 70F has tw o diode chips connected in series in 25 mm 1 inch width package and the

DD70F

Abstract: DD70F120 DD70F160 DD70F40 DD70F80
Contextual Info: DIODE MODULE DD70F/KD70F UL;E76102 （M） Power Diode Module DD70F series are designed for various rectifier circuits. DD70F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

DD70F120

Abstract: DD70F160 DD70F DD70F40 DD70F80
Contextual Info: DIODE MODULE DD70F/KD70F UL;E76102 M Power Diode Module DD70F series are designed for various rectifier circuits. DD70F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

DD70F

Abstract: DD70F120 DD70F160 DD70F40 DD70F80
Contextual Info: DIODE MODULE DD70F/KD70F UL;E76102 （M） Power Diode Module DD70F series are designed for various rectifier circuits. DD70F has two diode chips connected in series in 25mm 1inch width package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage

Contextual Info: DIODE MODULE DD70F/KD70F Power Diode Module D D 7 0 F series are designed for various rectifier circuits. D D 7 0 F has two diode chips connected in series in 25 mm linch width package and the mounting base is electri­ cally isolated from elements for simple heatsink construction.

Contextual Info: S G S - 1 H M S 0 N SD4600 IL iO T M I RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS PRELIMINARY DATA . • » . GOLD METALLIZATION 860-960 MHz 26 VOLTS EFFICIENCY 50% MIN. ■ P o u t = 60 W MIN. WITH 7.5 d B GAIN DESCRIPTION The SD4600 is designed for 960MHz mobile base

TU 55x

Contextual Info: G 7. SGS'THOMSON SD1563 RiilO iS lilL§ TIM!ID©i RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS 350 WATTS @ 1O^SEC PULSE WIDTH, 10% DUTY CYCLE 300 WATTS @ 250|iSEC PULSE WIDTH, 10% DUTY CYCLE 9.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW

DD200KB160

Abstract: DD100KB160 DD240KB160 DD160KB160 DG20AA DG20AA120 DG20AA160 DG20AA40 DG20AA80 3-element diode
Contextual Info: DIODE ISOLATED MOLD TYPE DG20AA UL;E76102 （M） DG20AA is a medium power isolated module diode suitable for wide range of industrial and home elctronics use. DG20AA is highly reliable by glass pasivation. 39.2 MAX 20.2 MAX 2-φ4.2±0.1 ● IF （AV） ＝20A,

285-25

Abstract: DD40F-160 DD40F-120 DD40F-140 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr V] m is isa m & * & n lo Vpm ax I fsm I Rtnax m •e o m m tt ^ m ÍV V) rc> (A ) I f (A) t (/a A ) V r (V ) D D 4 0 F — 1 20 DD40F-140 DD40F-160 DD40F-20 DD40F-40 130 0 150 0 1700 240 4 80 1200 1400 1600

SAA 1350

Abstract: DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
Contextual Info: - 122- 4t m % Pr s m Vr s m fé * V M Vr m is isa m Vpmax I fsm & * •e V rc> (A) (/a A) V r (V) T C C ) 1200 1400 1600 200 400 40 40 40 40 40 96c 96c 96c 96c 96c 1200 1200 1200 1200 1200 25 j 25 j 25 j 25 j 25 j 1. 40 1.4 0 1. 40 1. 40 1.4 0 120 120

Contextual Info: 7#. / = ^ 7 S G S - T H O M S O N M » ilL liC T M ] ( g § _ S D 1565 RF & MICROWAVE TRANSISTORS _UHF PULSED APPLICATIONS . 500 WATTS @ 250|iSec PULSE WIDTH, 10% DUTY CYCLE . REFRACTORY GOLD METALLIZATION > EMITTER BALLASTING AND LOW