DBCOM Search Results

NEZ1414-8E

Abstract: 39.5dB GaAs FET
Contextual Info: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION

C1850

Abstract: Samsung tv remote control circuit diagram c1860 KS51899 SMCS-51 K9 samsung mov k25 c1860 remote SF 455 D transistor c1850
Contextual Info: 1. S3C1840 S3C1840 DESCRIPTION S3C1840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The S3C1840

x-band microwave fet

Abstract: NEZ1011-2E 17148
Contextual Info: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

Siemens A 1458

Abstract: FET marking code 365
Contextual Info: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,

Contextual Info: FEATURES & • D C - 4 G H z Frequency Range ■ 5 nSec Switching Speed ■ Low Insertion Loss MODEL NO. P35-4250-0 GaAs MMIC SP4T ■ Ultra Low D C Power Consumption ■ Small Chip S ize .029 x .036 ■ Reflective ■ Plastic Package Available-P/N P35-4250-3

Contextual Info: GaAs Switches II & Page: In This Issue: DC-2000 MHz To-5 SP2T s. M odel No. DS0850/813 10-1500 MHz To-8 & R a t p a ck SP2T's. M odel No. DS0860/812 5-1000 MHz H igh Iso latio n Flat p a ck SP2T. M odel No. DS0662 5-1000 MHz 24 PIN DIP SP8T. M odel No. DS0838

Contextual Info: FEA TU R ES MODEL NO. DS0820 är • 1 0 - 1500 MHz ■ 15 m A ,+5 VDC ■ TTL Driver & PIN Diode SP10T ■ Non-Reflective - P A R T IDENTIFICATION je : T .21 018 DIA 38 P L A C E S RF 8 38 37 LOGIC TABLE 7 8 9 10 PIN A3 A2 A1 AD FUNCTION 0 0 0 0 RF 1 TORF COM

ADCOM 3A

Abstract: adcom 2a
Contextual Info: 14-Bit, 600+ MSPS D/A Converter AD9725 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES 600+ MSPS DAC update rate 16/14/12/10-bit resolution family LVDS interface with built-in 100-termination resistors Single data rate and double data rate capability

transistor D1138

Abstract: D1138 D1138 transistor KS51840 mov k30 Samsung tv remote control circuit diagram KS51850 D4 samsung tv remote control diagram circuit sony k58 SMCS-51
Contextual Info: Product Overview Address Spaces Addressing Modes Memory Map SMCS51 Instruction Set KS51840 1 KS51840 OVERVIEW KS51840, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­

sn 0716

Abstract: NEC D 587
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1

D560 transistor

Abstract: nec D560 transistor transistor d560 transistor D1138 KS51850 KS51850 D4 Samsung tv remote control circuit diagram d1138 transistor d560 nec nec D560
Contextual Info: 51850 2 KS51850 OVERVIEW KS51850, a 4-bit single-chip CMOS microcontroller, consists of the reliable SMCS-51 CPU core with on-chip ROM and RAM. Eight input pins and 11 output pins provide the flexibility for various I/O requirements. Auto reset circuit generates reset pulse every certain period, and every halt mode termination time. The KS51850

AD9724

Abstract: AD9777 DB10 adcom
Contextual Info: 12-Bit, 600+ MSPS D/A Converter AD9724 Preliminary Technical Data FUNCTIONAL BLOCK DIAGRAM FEATURES 600+ MSPS DAC update rate 16/14/12/10-bit resolution family LVDS interface with built-in 100-termination resistors Single data rate and double data rate capability

gaas fet T79

Abstract: NES1821B-30
Contextual Info: PRELIMINARY DATA SHEET 30 W L-BAND NES1821B-30 POWER GaAs MESFET OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OR AB OPERATION PACKAGE OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN 24±0.2 20.4±0.15 • HIGH POWER ADDED EFFICIENCY 1.0±0.1 GATE

NE850R5

Abstract: NE850R599
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor smd code marking 561

Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Contextual Info: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,

WL431003667

Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Contextual Info: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,

Contextual Info: Infineon ?achnc!ugies GaAs FET CLY 5 Data Sheet • Power amplifier for mobile phones • For frequencies from 400 MHz to 2.5 GHz • Wide operating voltage range: 2.7 to 6 V • POUJ at VD = 3 V , / = 1.8 GHz typ. 26.5 dBm • High efficiency better 55% ESD: Etectrostatic discharge sensitive device,

Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE1280 SERIES K-BAND MEDIUM POWER AMPLIFIE N-CHANNEL HJ-FET CHIPS DESCRIPTION CHIP DIMENSIONS unit: jum The NE1280 series is medium power HJ-FET chips which offer high output power and high gain for telecom

Contextual Info: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET FEATURES_ • • • HIGH OUTPUT POWER: 50 W TYP HIGH DRAIN EFFICIENCY: 52 % TYP @ V ds = 10 V, Id = 2 A, f = 1.96 GHz HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

Contextual Info: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION

80500 TRANSISTOR

Contextual Info: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200

NEZ1011-4E

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15

x-band microwave fet

Abstract: NEZ1011-8E pt 2399
Contextual Info: 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • HIGH EFFICIENCY: 25% TYP