DB4J406K Search Results

DB4J406K

Abstract: db4j406
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: Doc No. TT4-EA-12481 Revision. 2 Product Standards Schottky Barrier Diode DB4J406K0R DB4J406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits 2.0 0.3 „ Features 0.13 4 3 1 2 1.25 2.1 y Small reverse current IR y Short reverse recovery time trr

db4j406k

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB5S406K Silicon epitaxial planar type For high speed switching circuits DB4J406K in SSMini5 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

DB4J406K

Abstract: ZKH00259BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K Silicon epitaxial planar type For high speed switching circuits • Features  Package  Short reverse recovery time trr  Small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: Doc No. TT4-EA-12509 Revision. 3 Product Standards Schottky Barrier Diode DB5S406K0R DB5S406K0R Silicon epitaxial planar type Unit: mm For high speed switching circuits DB4J406K in SSMini5 type package 1.6 0.2 5 „ Features 0.13 4 1.2 1.6 y Small reverse current IR

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB4J406K (Tentative) Silicon epitaxial planar type For high speed switching circuits • Package  Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage Repetitive peak reverse voltage

DB4J406K

Abstract: DB5S406K ZKH00359AED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB5S406K Silicon epitaxial planar type For high speed switching circuits DB4J406K in SSMini5 type package • Features  Package  Short reverse recovery time trr  Small reverse current IR

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.