DB2J411 Search Results

DB2J411

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 Silicon epitaxial planar type For rectification • Package  Features  Short reverse recovery time trr  Low forward voltage VF and small reverse current IR  Contributes to miniaturization of sets, reduction of component count.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2X411 Silicon epitaxial planar type For rectification DB2J411 in Mini2 type package • Package  Features  Short reverse recovery time trr  Low forward voltage VF and small reverse current IR

DB2J411

Abstract: ZKH00272BED
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 Silicon epitaxial planar type For rectification • Features  Package  Packaging  Code SMini2-F5-B  Pin Name 1: Cathode 2: Anode  Low forward voltage VF and small reverse current IR

Contextual Info: Doc No. TT4-EA-13100 Revision . 2 Product Standards Schottky Barrier Diode DB5H411K0L DB5H411K0L Silicon epitaxial planar type Unit: mm For high frequency rectification DB2J411 in WSMini5 type package 2.0 0.2 5 0.13 4 • Features 1.7 2.1  Low forward voltage and low reverse leakage current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB5H411K Silicon epitaxial planar type For high frequency amplification DB2J411 in WSMini5 type package • Features  Package  Low forward voltage VF and small reverse current IR  Short reverse recovery time trr

Contextual Info: Doc No. TT4-EA-13670 Revision. 3 Product Standards Schottky Barrier Diode DB2X41100L DB2X41100L Silicon epitaxial planar type Unit: mm For rectification DB2J411 in Mini2 type package 1.6 0.13 2 • Features 2.6 3.5  Low forward voltage and low reverse leakage current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . DB2J411 (Tentative) Silicon epitaxial planar type For rectification • Package  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit VR 40 V IF(AV) 1 A IFSM 3 A Junction temperature

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

MN864779

Abstract: MN88472 AN12947a MN6627553 MIP3E3SMY AN22004A mip2E2dmy MIP2F2* replacement MIP2E7DMY MIP3E50MY
Contextual Info: 2013 Semiconductor Selection Guide How to Read This Document Structure of this document This document consists of the part number list, application block diagrams, and recommended types by classification. Types are classified according to the ECALS glossary.